Current sense circuit with electrostatic discharge protection
A circuit that allows for accurate power transistor current sensing and electrostatic discharge protection. The circuit includes a power field-effect transistor and a sense field-effect transistor. The sense transistor current is proportional to (but much smaller than) the power transistor current. Thus, the power transistor current may be measured by measuring instead the sense transistor current. The gate nodes of the transistors are connected together, and the drain nodes of the transistors are connected together. However, the source nodes of the transistors are not directly connected to each other, and are instead connected together via a protective resistor. When the circuit is exposed to electrostatic discharge at the source of the sense transistor, the influx of charge that would have otherwise damaged the sense transistor is instead shared between both transistors via the protective resistor.
1 . A die comprising a circuit that comprises:
a power field-effect transistor having a gate node that controls whether current flows from a drain node of the power field-effect transistor to a source node of the power field-effect transistor;
a sense field-effect transistor having a gate node that controls whether current flows from a drain node of the sense field-effect transistor to a source node of the sense field-effect transistor, the source node further connected to an external source sense terminal of the die, the gate node of the sense field-effect transistor being connected to the gate node of the power field-effect transistor, the drain node of the sense field-effect transistor being connected to the drain node of the power field-effect transistor; and
a resistor connected between the source node of the sense field-effect transistor and the source node of the power field-effect transistor, such that any electrostatic discharge externally applied to the external source sense terminal will be dissipated not only through the sense field-effect transistor, but via the resistor through the power field-effect transistor to provide electrostatic discharge protection to the sense field-effect transistor.
2 . The die according to claim 1 , the resistance of the resistor being at least 500 ohms.
3 . The die according to claim 1 , the resistance of the resistor being at least 100 ohms.
4 . The die according to claim 1 , wherein the resistance of the resistor is greater than an on-resistance of the sense field-effect transistor.
5 . The die according to claim 1 , wherein the resistance of the resistor is greater than twice an on-resistance of the sense field-effect transistor.
6 . The die according to claim 1 , wherein the resistance of the resistor is greater than five times an on-resistance of the sense field-effect transistor.
7 . The die according to claim 1 , the product of the resistance of the resistor and a gate width of the sense field-effect transistor is greater than 50 ohm·mm.
8 . The die according to claim 1 , the product of the resistance of the resistor and a gate width of the sense field-effect transistor is greater than 10 ohm·mm.
9 . The die according to claim 1 , wherein the power field-effect transistor and the sense field-effect transistor are manufactured on a semiconductor substrate using portions of a same epitaxial stack epitaxially deposited on the semiconductor substrate.
10 . The die according to claim 1 , wherein the power field-effect transistor and the sense field-effect transistor are each gallium-nitride field-effect transistors.
11 . The die in accordance with claim 1 , a gate width of the power field-effect transistor being at least 100 times a gate width of the sense field-effect transistor.
12 . A circuit that comprises:
a power field-effect transistor having a gate node that controls whether current flows from a drain node of the power field-effect transistor to a source node of the power field-effect transistor;
a sense field-effect transistor having a gate node that controls whether current flows from a drain node of the sense field-effect transistor to a source node of the sense field-effect transistor, the gate node of the sense field-effect transistor being connected to the gate node of the power field-effect transistor, the drain node of the sense field-effect transistor being connected to the drain node of the power field-effect transistor, wherein the power field-effect transistor and the sense field-effect transistor are manufactured on a semiconductor substrate using portions of a same epitaxial stack epitaxially deposited on the semiconductor substrate; and
a resistor connected between the source node of the sense field-effect transistor and the source node of the power field-effect transistor,
the power field-effect transistor comprising a source contact portion that is elongated in a particular direction parallel to the semiconductor substrate, and that is connected to the source node of the power field-effect transistor; and
the sense field-effect transistor comprising a source contact portion that is elongated in the particular direction and that is connected to the source node of the sense field-effect transistor, the source contact portion of the sense field-effect transistor being colinear with the source contact portion of the power field-effect transistor;
wherein the resistor is a conductor that extends in the particular direction colinearly with the source contact portion of the power field-effect transistor and the source contact portion of the sense field-effect transistor to thereby electrically couple with a resistance the source contact portion of the power field-effect transistor and the source contact portion of the sense field-effect transistor.
13 . The circuit according to claim 12 , the resistance of the resistor being at least 500 ohms.
14 . The circuit according to claim 12 , the resistance of the resistor being at least 100 ohms.
15 . The circuit according to claim 12 , wherein the resistance of the resistor is greater than an on-resistance of the sense field-effect transistor.
16 . The circuit according to claim 12 , wherein the resistance of the resistor is greater than twice an on-resistance of the sense field-effect transistor.
17 . The circuit according to claim 12 , wherein the resistance of the resistor is greater than five times an on-resistance of the sense field-effect transistor.
18 . The circuit according to claim 12 , the product of the resistance of the resistor and a gate width of the sense field-effect transistor is greater than 50 ohm·mm.
19 . The circuit according to claim 12 , the product of the resistance of the resistor and a gate width of the sense field-effect transistor is greater than 10 ohm·mm.