High power module package structures
In a general aspect, a package includes a semiconductor die disposed between a first high voltage isolation carrier and a second high voltage isolation carrier. The semiconductor die is thermally coupled to the first high voltage isolation carrier. The package also includes a molding material disposed in a space between the semiconductor die and the first high voltage isolation carrier, and a conductive spacer disposed between the semiconductor die and the second high voltage isolation carrier. The conductive spacer is thermally coupled to semiconductor die and to the second high voltage isolation carrier. A longitudinal dimension of the conductive spacer is greater than a longitudinal dimension of the semiconductor die. The molding material encapsulates the semiconductor die and the conductive spacer.
1. A package comprising:
a semiconductor die disposed between a first high voltage isolation carrier and a second high voltage isolation carrier, the semiconductor die being thermally coupled to the first high voltage isolation carrier via a first coupling mechanism and a second coupling mechanism;
a molding material disposed in a space between the semiconductor die and the first high voltage isolation carrier, and between the first coupling mechanism and the second coupling mechanism; and
a conductive spacer disposed between the semiconductor die and the second high voltage isolation carrier, the conductive spacer thermally coupled to the semiconductor die and to the second high voltage isolation carrier, wherein a lateral dimension of the conductive spacer is greater than a lateral dimension of the semiconductor die,
the molding material encapsulating the semiconductor die and the conductive spacer.
2. The package of claim 1 , wherein the molding material includes one of:
a polymer material; or
an epoxy material.
3. The package of claim 1 , further comprising an electrical connection lead coupled with the first high voltage isolation carrier and the second high voltage isolation carrier.
4. The package of claim 3 , wherein:
the first high voltage isolation carrier includes a first conductor layer coupled with the electrical connection lead; and
the second high voltage isolation carrier includes a second conductor layer coupled with the electrical connection lead.
5. The package of claim 1 , wherein a surface of the conductive spacer includes a circumferential groove, the semiconductor die being coupled to the surface of conductive spacer within the circumferential groove.
6. The package of claim 1 , wherein the conductive spacer has a rectangular shape with rounded corners.
7. The package of claim 1 , wherein the semiconductor die has a rectangular shape with rounded corners.
8. A package comprising:
a first direct bonded metal (DBM) substrate, a metal surface of the first DBM substrate defining a first outer surface of the package;
a second DBM substrate, a metal surface of the second DBM substrate defining a second outer surface of the package; and
a first vertical stack disposed between the first DBM substrate and the second DBM substrate, the first vertical stack including:
a first semiconductor die; and
a first conductive spacer coupled with the first semiconductor die, a lateral dimension of the first conductive spacer being greater than a lateral dimension of the first semiconductor die.
9. The package of claim 8 , further comprising:
a second vertical stack disposed between the first DBM substrate and the second DBM substrate, the second vertical stack including:
a second semiconductor die; and
a second conductive spacer coupled with the second semiconductor die, a lateral dimension of the second conductive spacer being greater than a lateral dimension of the second semiconductor die.
10. The package of claim 9 , wherein:
the first semiconductor die is electrically and thermally coupled with the first DBM substrate;
the first conductive spacer is electrically and thermally coupled with the second DBM substrate;
the second semiconductor die is electrically and thermally coupled with first DBM substrate; and
the second conductive spacer is electrically and thermally coupled with the second DBM substrate.
11. The package of claim 9 , wherein:
the first semiconductor die is electrically and thermally coupled with the first DBM substrate;
the first conductive spacer is electrically and thermally coupled with the second DBM substrate;
the second semiconductor die is electrically and thermally coupled with the second DBM substrate; and
the second conductive spacer is electrically and thermally coupled with the first DBM substrate.
12. The package of claim 9 , further comprising an electrically and thermally conductive pillar that is electrically and thermally coupled with the first DBM substrate and the second DBM substrate.
13. The package of claim 12 , wherein the electrically and thermally conductive pillar is:
electrically isolated from the first semiconductor die; and
electrically coupled with the second semiconductor die via the first DBM substrate.
14. The package of claim 9 , further comprising:
a first electrical connection lead electrically coupling the first DBM substrate with the second DBM substrate; and
a second electrical connection lead electrically coupling the first DBM substrate with the second DBM substrate.
15. The package of claim 9 , wherein a surface of the first conductive spacer includes a first circumferential groove, the first semiconductor die being coupled to the surface of the first conductive spacer within the first circumferential groove.
16. The package of claim 15 , wherein a surface of the second conductive spacer includes a second circumferential groove, the second semiconductor die being coupled to the surface of the second conductive spacer within the second circumferential groove.
17. A package comprising:
a semiconductor die disposed between a first high voltage isolation carrier and a second high voltage isolation carrier, the semiconductor die being thermally coupled to the first high voltage isolation carrier via a first coupling mechanism and a second coupling mechanism;
a conductive spacer disposed between the semiconductor die and the second high voltage isolation carrier, the conductive spacer thermally coupled to the semiconductor die and to the second high voltage isolation carrier; and
a molding material that:
is disposed in a space between the semiconductor die and the first high voltage isolation carrier, and between the first coupling mechanism and the second coupling mechanism; and
encapsulates the semiconductor die and the conductive spacer,
the conductive spacer, in a horizontal plane, having a shape of one of a rounded rectangle or a rounded square, and
the semiconductor die, in a horizontal plane, having a shape of one of a rounded rectangle or a rounded square.
18. The package of claim 17 , wherein a surface of the conductive spacer includes a circumferential groove, the semiconductor die being coupled to the surface of the conductive spacer within the circumferential groove.
19. The package of claim 17 , further comprising a supporting pillar disposed between and thermally coupled with the first high voltage isolation carrier and the second high voltage isolation carrier.
20. The package of claim 17 , wherein a lateral dimension of the conductive spacer is greater than a lateral dimension of the semiconductor die.