IP Library › Granted Patent US 12,394,727
Granted Patent B2
US 12,394,727 · App. 18/511,428 · Granted Aug 19, 2025

Semiconductor device and method for forming electromagnetic interference (EMI) shielded packages with laser-based redistribution and multi-stacked packages

Inventors: ChangOh Kim (Incheon, KR); KyoungHee Park (Seoul, KR); SeongHwan Park (Incheon, KR); JinHee Jung (Incheon, KR)
Assignee: STATS ChipPAC Pte. Ltd.
H01L23/552H01L21/486H01L21/56H01L23/31H01L23/66H01Q1/2283
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Quick Facts
Patent No.
US 12,394,727
App. No.
18/511,428
Granted
Aug 19, 2025
Kind
B2
Abstract

A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.

Claims (59)

1. A method of making a semiconductor device, comprising:

providing a first package layer;

forming a redistribution layer over the first package layer by inkjet or electrohydrodynamic jet printing;

disposing an electrical component over the redistribution layer;

depositing an encapsulant over the electrical component;

forming a shielding layer over the encapsulant; and

patterning the shielding layer.

2. The method of claim 1 , further including patterning the shielding layer using a laser.

3. The method of claim 1 , further including patterning the shielding layer to include an antenna.

4. The method of claim 1 , further including forming a conductive via through the encapsulant, wherein the electrical component is coupled to the shielding layer through the conductive via.

5. The method of claim 1 , further including:

forming a patterned cavity in the encapsulant; and

patterning the shielding layer to match the patterned cavity.

6. The method of claim 1 , further including:

patterning the shielding layer to include a contact pad; and

disposing a board-to-board (B2B) connector over the contact pad.

7. A method of making a semiconductor device, comprising:

providing a first package layer;

forming a redistribution layer over the first package layer by inkjet or electrohydrodynamic jet printing;

forming a second package layer utilizing the redistribution layer;

forming a shielding layer over the second package layer; and

patterning the shielding layer.

8. The method of claim 7 , further including patterning the shielding layer using a laser.

9. The method of claim 7 , further including patterning the shielding layer to include an antenna.

10. The method of claim 7 , further including coupling the first package layer to the second package layer through the redistribution layer.

11. The method of claim 7 , further including:

forming a patterned cavity in the first package layer; and

forming the redistribution layer to match the patterned cavity.

12. The method of claim 7 , further including disposing a board-to-board (B2B) connector over the shielding layer.

13. The method of claim 7 , further including forming the redistribution layer to include a ground plane.

14. A method of making a semiconductor device, comprising:

providing a first package layer;

forming a first redistribution layer over the first package layer;

depositing a first encapsulant over the first redistribution layer;

forming a shielding layer over the first encapsulant; and

patterning the shielding layer.

15. The method of claim 14 , further including forming the first redistribution layer by inkjet or electrohydrodynamic jet printing.

16. The method of claim 14 , further including forming the first redistribution layer embedded into the first package layer.

17. The method of claim 14 , further including:

depositing a second encapsulant over the first redistribution layer;

forming a second redistribution layer over the second encapsulant; and

depositing the first encapsulant over the second encapsulant.

18. The method of claim 17 , wherein the first redistribution layer and second redistribution layer are formed using inkjet or electrohydrodynamic jet printing.

19. The method of claim 14 , further including patterning the shielding layer to form an antenna.

20. A method of making a semiconductor device, comprising:

providing a first package layer including,

a substrate,

a semiconductor die mounted to the substrate,

a solder bump disposed between the semiconductor die and substrate,

an encapsulant deposited over the substrate and semiconductor die, and

a conductive via extending through the encapsulant adjacent to the semiconductor die;

forming a redistribution layer over the first package layer, wherein the redistribution layer includes a ground plane, and wherein the encapsulant remains between a back surface of the semiconductor die and the redistribution layer after forming the redistribution layer; and

forming a second package layer including an electrical component mounted to a contact pad of the redistribution layer after the redistribution layer is formed over the first package layer.

21. The method of claim 20 , further including forming a shielding layer over the second package layer.

22. The method of claim 21 , further including patterning the shielding layer.

23. The method of claim 20 , further including coupling the first package layer to the second package layer through the redistribution layer.

24. The method of claim 20 , further including:

forming a patterned cavity in the first package layer; and

forming the redistribution layer to match the patterned cavity.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2023
From: KIM, CHANGOH; PARK, SEONGHWAN; PARK, KYOUNGHEE; JUNG, JINHEE
To: STATS CHIPPAC PTE. LTD.
Reel/Frame 065588/0637 →
Continuity (3)
Continuation 18161693 · Jan 30, 2023
Division 17314916 · May 7, 2021
Related Publication 20240113038A1 · Apr 4, 2024
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