Solid-state imaging device having through electrode provided therein and electronic apparatus incorporating the solid-state imaging device
There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.
1 . A light detecting device, comprising:
a first photoelectric conversion element disposed on or above a first surface of a semiconductor substrate;
a through electrode electrically connected to the first photoelectric conversion element, and at least partially disposed between the first surface and a second surface of the semiconductor substrate;
an amplifier transistor disposed on or below the second surface the semiconductor substrate;
a photodiode disposed in the semiconductor substrate,
wherein the amplifier transistor is electrically connected to the first photoelectric conversion element and the through electrode; and
a first floating diffusion electrically connected to the first photoelectric conversion element and the through electrode.
2 . The light detecting device according to claim 1 , further comprising:
a second floating diffusion electrically connected to the photodiode.
3 . The light detecting device according to claim 1 , wherein the through electrode penetrates the semiconductor substrate.
4 . The light detecting device according to claim 1 , wherein the first photoelectric conversion element comprises:
an upper electrode;
a photoelectric conversion film; and
a lower electrode, and
wherein the light detecting device further comprises:
a first contact;
wherein the lower electrode is coupled to the through electrode
via the first contact.
5 . The light detecting device according to claim 1 , further comprising a second contact, wherein the through electrode is coupled to a wiring layer via the second contact.
6 . The light detecting device according to claim 5 , further comprising:
a fourth contact,
wherein a gate of the amplifier transistor is coupled to the through electrode via the fourth contact, a connection section and the second contact.
7 . The light detecting device according to claim 5 , wherein the first floating diffusion is coupled to the through electrode via a wiring.
8 . The light detecting device according to claim 7 , wherein the wiring is a portion of the wiring layer.
9 . The light detecting device according to claim 5 , further comprising a third contact, wherein the first floating diffusion is coupled to the through electrode via the third contact.
10 . The light detecting device according to claim 9 , wherein the first floating diffusion is coupled to the wiring layer via the third contact.
11 . The light detecting device according to claim 1 , wherein the through electrode is separated from the semiconductor substrate by a groove formed in the semiconductor substrate.
12 . The light detecting device according to claim 1 , further comprising:
a reset transistor disposed on the second surface of the semiconductor substrate, and
a gate of the reset transistor disposed adjacent to the first floating diffusion.
13 . The light detecting device according to claim 1 , wherein the first floating diffusion is closer to the first photoelectric conversion element than a gate of the amplifier transistor.
14 . A light detecting device, comprising:
a first photoelectric conversion element disposed on or above a first surface of a semiconductor substrate;
a through electrode electrically connected to the first photoelectric conversion element, and disposed between the first surface and a second surface of the semiconductor substrate;
a first part of a dielectric region disposed between a first region of the semiconductor substrate and the through electrode in a cross-section view;
a second part of the dielectric region disposed between a second region of the semiconductor substrate and the through electrode in the cross-section view;
a second contact,
wherein the through electrode is coupled to a wiring layer via the second contact;
a third contact coupled to the through electrode via a connection section in the wiring layer; and
a fourth contact,
wherein a gate of an amplifier transistor disposed at the second surface of the
semiconductor substrate is coupled to the through electrode via the fourth contact, the connection section and the second contact.
15 . The light detecting device according to claim 14 , wherein the first part and the second part of the dielectric region both include a groove disposed in the semiconductor substrate and a dielectric layer disposed in the groove.
16 . The light detecting device according to claim 15 , wherein the first part and the second part of the dielectric region further include a gap disposed in the gap.
17 . The light detecting device according to claim 14 , wherein a third part of the dielectric region is disposed on the first surface of the semiconductor substrate.
18 . The light detecting device according to claim 14 , further comprising a film having a fixed charge disposed between the first part of the dielectric region and the first region of the semiconductor substrate and between the first part of the dielectric region and the through electrode.
19 . The light detecting device according to claim 14 , wherein the first photoelectric conversion element comprises:
an upper electrode;
a photoelectric conversion film; and
a lower electrode,
wherein the light detecting device further comprises:
a first contact,
wherein the lower electrode is coupled to the through electrode via the first contact.