Pixel circuit, display device using the same and manufacturing method thereof
The present invention relates to a pixel circuit, a display device using the same, and a method of manufacturing the same. A pixel circuit according to the present technology is a pixel circuit including a light-emitting diode and can include a light-emitting diode, the pixel circuit including a switching transistor connected to a node at which a scan line and a signal line intersect each other, a driving transistor which receives a data voltage in the signal line through the switching transistor and converts the data voltage to a current to be supplied to the light-emitting diode, and a storage capacitor which maintains a voltage applied by the switching transistor, wherein at least one of the driving transistor and the storage capacitor includes a layer formed of a ferroelectric. The present technology can provide a pixel circuit using a programmable driving TFT or programmable storage capacitor using a ferroelectric instead of a compensation circuit for compensating a critical voltage of the conventional current drive-based display circuit.
1. A pixel circuit including a light-emitting diode, comprising:
a switching transistor connected to a node at which a scan line and a signal line intersect each other;
a driving transistor which receives a data voltage in the signal line through the switching transistor and converts the data voltage to a current to be supplied to the light-emitting diode, wherein the driving transistor includes a driving transistor insulating layer comprising a first ferroelectric layer formed as a first programmable polycrystalline; and
a storage capacitor which maintains a voltage applied by the switching transistor, wherein the storage capacitor includes a storage capacitor insulating layer comprising a second ferroelectric layer formed as a second programmable polycrystalline.
2. The pixel circuit of claim 1 , wherein at least one of the first ferroelectric layer or the second ferroelectric layer includes hafnium-zirconium oxide.
3. The pixel circuit of claim 1 , wherein the driving transistor includes a single gate transistor and the driving transistor insulating layer is between a gate electrode and a channel layer of the driving transistor.
4. The pixel circuit of claim 1 , wherein the driving transistor includes a double gate transistor.
5. The pixel circuit of claim 1 , wherein:
a source of the switching transistor is connected to the signal line;
a gate of the switching transistor is connected to the scan line; and
a drain of the switching transistor and a first end of the storage capacitor are connected to a gate of the driving transistor.
6. The pixel circuit of claim 5 , wherein a second end of the storage capacitor is connected to a ground source.
7. A display device comprising a pixel circuit including a light-emitting diode, wherein:
the pixel circuit includes a switching transistor connected to a node at which a scan line and a signal line intersect each other;
a driving transistor which receives a data voltage in the signal line through the switching transistor and converts the data voltage to a current to be supplied to the light-emitting diode, wherein the driving transistor includes a driving transistor insulating layer comprising a first ferroelectric layer formed as a first programmable polycrystalline; and
a storage capacitor which maintains a voltage applied by the switching transistor, wherein the storage capacitor includes a storage capacitor insulating layer comprising a second ferroelectric layer formed as a second programmable polycrystalline.
8. The display device of claim 7 , wherein at least one of the first ferroelectric layer or the second ferroelectric layer includes hafnium-zirconium oxide.
9. The display device of claim 7 , wherein the driving transistor includes a single gate transistor and the driving transistor insulating layer is between a gate electrode and a channel layer of the driving transistor.
10. The display device of claim 7 , wherein the driving transistor includes a double gate transistor.
11. The display device of claim 7 , wherein:
a source of the switching transistor is connected to the signal line;
a gate of the switching transistor is connected to the scan line; and
a drain of the switching transistor and a first end of the storage capacitor are connected to a gate of the driving transistor.
12. The display device of claim 11 , wherein the other a second end of the storage capacitor is connected to a ground source.
13. A method of manufacturing a display device, comprising:
preparing a substrate;
forming a first thin film transistor (TFT), a second TFT, and a storage electrode on the substrate, wherein the second TFT includes a TFT insulating layer comprising a first ferroelectric layer formed as a first programmable polycrystalline;
forming a metal bus on the second TFT and the storage electrode, and dividing the metal bus to form a first metal bus and a second metal bus;
forming a second ferroelectric layer on the second metal bus to form a storage capacitor in which the storage electrode serves as one electrode and the second ferroelectric layer serves as a dielectric material layer, wherein the second ferroelectric layer is formed as a second programmable polycrystalline; and
forming a light-emitting element including a light-emitting layer on the first metal bus.
14. The method of claim 13 , wherein the second ferroelectric layer is disposed above the first TFT and the second TFT.
15. The method of claim 13 , wherein the second TFT includes a single gate transistor as a driving transistor.
16. The method of claim 13 , wherein the second TFT includes a double gate transistor as a driving transistor.