Non-volatile ferroelectric capacitor and display driving circuit
There is provided a non-volatile ferroelectric capacitor and a display driving circuit. The non-volatile ferroelectric capacitor comprises: a ferroelectric capacitor, which is formed on the surface of a substrate; and a first channel layer and a second channel layer, which are respectively formed on the surface of the substrate. The ferroelectric capacitor comprises a bottom electrode, a ferroelectric thin film and a top electrode, which are sequentially arranged in a stacked manner; the first channel layer is in contact with the bottom electrode; a dielectric material is formed on the surfaces of the ferroelectric capacitor, the first channel layer and the second channel layer; and a first gate electrode and a second gate electrode are formed on the surface of the dielectric material, such that the structure of the ferroelectric capacitor is obtained.
1. A non-volatile ferroelectric capacitor, comprising:
a substrate;
a ferroelectric capacitor, which is formed in a middle of a surface of the substrate; a first channel layer and a second channel layer, which are respectively formed on both sides of the surface of the substrate;
the ferroelectric capacitor comprises a bottom electrode, a ferroelectric thin film and a top electrode, which are sequentially arranged in a stacked manner, wherein the first channel layer is in contact with the bottom electrode;
a dielectric material is formed on surfaces of the ferroelectric capacitor, the first channel layer and the second channel layer;
a first gate electrode and a second gate electrode are formed on a surface of the dielectric material, such that a structure of the ferroelectric capacitor is formed;
the structure of the ferroelectric capacitor is provided with a first groove, a second groove, a third groove, a fourth groove, a fifth groove, a sixth groove and a seventh groove;
the first channel layer is at the bottom of the first groove and the second groove;
the first gate electrode is at the bottom of the third groove;
the second channel layer is at the bottom of the fourth groove and the fifth groove;
the second gate electrode is at the bottom of the sixth groove; and
and the top electrode is at the bottom of the seventh groove.
2. The non-volatile ferroelectric capacitor according to claim 1 , wherein the first gate electrode is arranged in correspondence with the first channel layer, and the second gate electrode is arranged in correspondence with the second channel layer; and
an area of the first gate electrode is smaller than an area of the first channel layer, and an area of the second gate electrode is smaller than an area of the second channel layer.
3. The non-volatile ferroelectric capacitor according to claim 1 , wherein a passivation layer is deposited on the structure of the ferroelectric capacitor.
4. The non-volatile ferroelectric capacitor according to claim 1 , wherein metal is deposited in the first groove, the second groove, the third groove, the fourth groove, the fifth groove, the sixth groove and the seventh groove.
5. The non-volatile ferroelectric capacitor according to claim 1 , wherein the substrate comprises one of a glass sheet, a flexible mica sheet, a Polydimethylsiloxane (PDMS) substrate, a polyimide (PI) substrate, and a quartz sheet.
6. The non-volatile ferroelectric capacitor according to claim 1 , wherein a buffer layer is arranged between the substrate and the ferroelectric capacitor; and the buffer layer is made of one of silicon nitride, silicon oxide and aluminum oxide, or is a substrate interface layer obtained after treatment with plasmas.
7. The non-volatile ferroelectric capacitor according to claim 1 , wherein the bottom electrode is made of one of Pt, Ir, W, Ni, TiN, TaN, HfNx, ITO, ZnO, poly-Si, silver nanowires and graphene.
8. The non-volatile ferroelectric capacitor according to claim 1 , wherein the ferroelectric thin film is made of one of hafnium oxide-based ferroelectric materials, PZT, SBT, PVDF and BNT.
9. The non-volatile ferroelectric capacitor according to claim 1 , wherein the top electrode is made of one of Pt, Ir, W, Ni, TiN, aN, HfNx, ITO, ZnO, poly-Si, silver nanowires and graphene.
10. The non-volatile ferroelectric capacitor according to claim 1 , wherein the first channel layer and the second channel layer are made of one of amorphous silicon, polysilicon, ZnO, IGZO, IZO, AZO and carbon nanotubes.
11. The non-volatile ferroelectric capacitor according to claim 1 , wherein the dielectric material is made of one or more of SiO 2 , Si 3 N 4 , HfO 2 , ZrO 2 , Al 2 O 3 , La 2 O 3 , Y 2 O 3 and TiO 2 .
12. The non-volatile ferroelectric capacitor according to claim 1 , wherein the first gate electrode and the second gate electrode are made of one of Pt, Ir, W, Ni, TiN, TaN, HfNx, ITO, ZnO, poly-Si, silver nanowires and graphene.