Memory device with air gap and method for preparing the same
A memory device includes a bit line structure disposed over a semiconductor substrate, and a lower capacitor contact disposed over the semiconductor substrate and adjacent to the bit line structure. The memory device also includes a first nitride spacer and a second nitride spacer disposed between the bit line structure and the lower capacitor contact. The memory device further includes a capacitor disposed over the first nitride spacer and the second nitride spacer. In addition, the memory device includes a first oxide liner and a second oxide liner disposed between the first nitride spacer and the second nitride spacer. An air gap is between the first oxide liner and the second oxide liner.
1 . A method for preparing a memory device, comprising:
forming a bit line structure over a semiconductor substrate;
forming a first nitride spacer, a second nitride spacer, and a first oxide spacer on a sidewall of the bit line structure, wherein the first nitride spacer is in direct contact with the bit line structure, and the first oxide spacer is between the first nitride spacer and the second nitride spacer;
forming a lower capacitor contact adjacent to the second nitride spacer;
forming a third nitride spacer over the lower capacitor contact and adjacent to the second nitride spacer;
forming a silicide layer over the lower capacitor contact;
forming an upper capacitor contact material over the silicide layer;
etching the upper capacitor contact material, the first nitride spacer, the second nitride spacer, and the first oxide spacer to form a capacitor opening;
removing the first oxide spacer through the capacitor opening to form a first gap between the first nitride spacer and the second nitride spacer;
performing an oxidation process to form a first oxide liner and a second oxide liner in the first gap;
forming a capacitor in the capacitor opening to seal the first gap, such that an air gap is enclosed by the capacitor, the first oxide liner, the second oxide liner, and the semiconductor substrate; and
wherein a top surface and a sidewall of the first nitride spacer are covered by and in direct contact with the first oxide liner and a top surface and a sidewall of each of the second nitride spacer and the third nitride spacer are covered by and in direct contact with the second oxide liner and the silicide layer is in direct contact with the second oxide liner.
2 . The method for preparing a memory device of claim 1 , wherein a top surface and a sidewall of the first nitride spacer are covered by the first oxide liner, and wherein a top surface and a sidewall of the second nitride spacer are covered by the second oxide liner.
3 . The method for preparing a memory device of claim 1 , further comprising:
forming a first native oxide layer between the first nitride spacer and the first oxide spacer; and
forming a second native oxide layer between the second nitride spacer and the first oxide spacer, wherein the first native oxide layer and the second native oxide layer are etched to form the capacitor opening.
4 . The method for preparing a memory device of claim 3 , further comprising:
removing the first native oxide layer and the second native oxide layer through the capacitor opening to form the first gap.
5 . The method for preparing a memory device of claim 1 , further comprising:
forming the third nitride spacer over the lower capacitor contact and adjacent to the second nitride spacer before the upper capacitor contact material is formed.
6 . The method for preparing a memory device of claim 5 , wherein the top surface of the third nitride spacer is covered by the second oxide liner after the oxidation process is performed.
7 . The method for preparing a memory device of claim 5 , further comprising:
forming a third native oxide layer between the second nitride spacer and the third nitride spacer before the upper capacitor contact material is formed, wherein the third nitride spacer is separated from the lower capacitor contact and the second nitride spacer by the third native oxide layer.
8 . The method for preparing a memory device of claim 7 , further comprising:
removing the third native oxide layer to form a second gap, wherein the second gap is filled by the second oxide liner after the oxidation process is performed.
9 . The method for preparing a memory device of claim 7 , further comprising:
forming the silicide layer over the lower capacitor contact after the third nitride spacer and the third native oxide layer are formed, wherein the upper capacitor contact material is formed over the silicide layer.
10 . The method for preparing a memory device of claim 9 , wherein the silicide layer is in direct contact with the second oxide liner after the oxidation process is performed.