POLISHING PAD AND METHOD OF MONITORING A POLISHING PROCESS USING THE SAME

1 . A polishing pad, which comprises a top pad layer, wherein the top pad layer comprises a light transmitting region for monitoring a change in the state of the polishing pad.

2 . The polishing pad of claim 1 , wherein the top pad layer has physical properties at the same level as those of the light transmitting region.

3 . The polishing pad of claim 2 , wherein the light transmitting region comprises:

a light transmitting polymer region having physical properties at the same level as those of the top pad layer; and

a light reflector provided below the light transmitting polymer region.

4 . The polishing pad of claim 1 , wherein a change in the thickness, or a change in the surface roughness, of the polishing pad is monitored through a change in the thickness, or a change in the surface roughness, of the light transmitting region.

5 . The polishing pad of claim 1 , wherein the light transmitting region has at least one surface shape selected from the group consisting of polygons, circles, rings, and spirals.

6 . The polishing pad of claim 1 , which further comprises a window region distinguished from the light transmitting region.

7 . The polishing pad of claim 6 , which further comprises a partition wall between the light transmitting region and the window region.

8 . A method for monitoring a polishing process, which comprises:

(1) placing a wafer on a polishing pad comprising a top pad layer comprising a light transmitting region to carry out a polishing process;

(2) scanning light to the light transmitting region from a first optical displacement detection sensor located above the light transmitting region; and

(3) detecting light reflected from the light transmitting region by the first optical displacement detection sensor to monitor a change in the state of the polishing pad.

9 . The method for monitoring a polishing process of claim 8 , wherein, in step (3), a phase change, a speed change, or an intensity change of reflected light due to a change in the thickness or surface roughness of the light transmitting region is detected to monitor a change in the thickness, or a change in surface roughness, of the polishing pad.

10 . The method for monitoring a polishing process of claim 8 , which further comprises (4) detecting the polishing termination point of the wafer through a window region further adopted in the polishing pad.

11 . The method for monitoring a polishing process of claim 10 , wherein step (4) comprises:

(4-1) scanning light toward the window region from a second optical displacement detection sensor located below the window region; and

(4-2) detecting light reflected from the window region by the second optical displacement detection sensor to determine the polishing termination point of the wafer.