Light sensitive element
In a light receiving element, a first semiconductor layer that is formed on the upper surface of a substrate and is formed with a semiconductor of a first conductivity type, a light absorbing layer formed with a semiconductor, a second semiconductor layer formed with a semiconductor of a second conductivity type, a first electrode that is formed in contact with the second semiconductor layer, is formed with a metal, and functions as a reflective film, and a second electrode formed on the first semiconductor layer are formed in a vertical direction on the upper surface of the substrate. In the light receiving element, a slope that is neither perpendicular nor parallel to the substrate plane is formed on the substrate, and incident light that has perpendicularly entered the slope is made to enter the light absorbing layer obliquely with respect to the vertical direction.
1 . A light receiving element, comprising:
a first semiconductor layer that is formed on an upper surface of a substrate and is formed with a semiconductor of a first conductivity type;
a light absorbing layer formed with a semiconductor;
a second semiconductor layer formed with a semiconductor of a second conductivity type, a first electrode that is formed in contact with the second semiconductor layer, is formed with a metal, and functions as a reflective film; and
a second electrode formed on the first semiconductor layer are formed in a vertical direction on the upper surface of the substrate,
wherein a slope that is neither perpendicular nor parallel to a substrate plane is formed on the substrate;
incident light that has perpendicularly entered the slope is made to enter the light absorbing layer obliquely with respect to the vertical direction; and
the incident light is made to enter from a light output unit disposed on a lower surface side of the substrate by a light bending unit disposed between the slope and the light output unit that inputs the incident light.
2 . A light receiving element, comprising:
a first semiconductor layer that is formed on an upper surface of a substrate and is formed with a semiconductor of a first conductivity type;
a light absorbing layer formed with a semiconductor;
a second semiconductor layer formed with a semiconductor of a second conductivity type, a first electrode that is formed in contact with the second semiconductor layer, is formed with a metal, and functions as a reflective film; and
a second electrode formed on the first semiconductor layer are formed in a vertical direction on the upper surface of the substrate,
wherein a slope that is neither perpendicular nor parallel to a substrate plane is formed on the substrate; and
incident light that has perpendicularly entered the slope is reflected by a bottom surface of the substrate, and is made to enter the light absorbing layer obliquely with respect to the vertical direction.
3 . The light receiving element according to claim 2 , wherein the incident light is made to enter from a light output unit disposed on an upper surface side of the substrate by a light bending unit disposed between the slope and the light output unit that inputs the incident light.
4 . The light receiving element according to claim 1 , wherein the light bending unit is a mirror.
5 . The light receiving element according to claim 1 , wherein the light bending unit is a prism.
6 . The light receiving element according to claim 1 , wherein an antireflective film is formed on the slope.
7 . The light receiving element according to claim 1 , wherein, in the light absorbing layer, a length in a direction parallel to an optical axis of the incident light is longer than a length in a direction orthogonal to the optical axis.
8 . The light receiving element according to claim 3 , wherein the light bending unit is a mirror.
9 . The light receiving element according to claim 3 , wherein the light bending unit is a prism.
10 . The light receiving element according to claim 2 , wherein an antireflective film is formed on the slope.
11 . The light receiving element according to claim 2 , wherein, in the light absorbing layer, a length in a direction parallel to an optical axis of the incident light is longer than a length in a direction orthogonal to the optical axis.