Integrated optical semiconductor device and integrated optical semiconductor device assembly
An integrated optical semiconductor device includes a substrate including first and second regions; a plurality of light receiving devices disposed in the second region; a multimode interference coupler disposed in the first region, the multimode interference coupler including output optical waveguides optically coupled to the corresponding light receiving devices; first and second conductive layers disposed on a back surface of the substrate in the first and second regions, respectively; and a plurality of capacitors disposed in the second region, each of the capacitors including a first electrode connected to one of the light receiving devices and a second electrode connected to the second conductive layer. The second conductive layer is electrically insulated from the first conductive layer. The substrate is made of a semi-insulating semiconductor. The multimode interference coupler and the light receiving devices include the same n-type semiconductor layer disposed on a principal surface of the substrate.
1. An integrated optical semiconductor device comprising:
a substrate having a principal surface and a back surface opposite to the principal surface, the substrate including a first region and a second region arranged in a first axis direction;
a plurality of light receiving devices disposed on the principal surface in the second region of the substrate, each light receiving device including a low cladding layer including are n-type semiconductor layer and a light receiving layer disposed on the low cladding layer;
a multimode interference coupler disposed on the principal surface in the first region of the substrate, the multimode interference coupler including a first cladding layer and a core layer disposed on the first cladding layer, the multimode interference coupler including output optical waveguides that are optically coupled to corresponding light receiving devices;
a first conductive layer disposed on the back surface in the first region of the substrate;
a second conductive layer disposed on the back surface in the second region of the substrate, the second conductive layer being electrically insulated from the first conductive layer by a gap between the first and second conductive layers; and
a plurality of capacitors disposed on the principal surface in the second region of the substrate, each of the capacitors including a first electrode electrically connected to one of the light receiving devices and a second electrode electrically connected to the second conductive layer,
wherein the substrate is made of a semi-insulating semiconductor material, and
the first cladding layer of the multimode interference coupler includes the n-type semiconductor layer of the light receiving devices.
2. The integrated optical semiconductor device according to claim 1 ,
wherein the first conductive layer and the second conductive layer each include a seed conductive layer disposed on the back surface of the substrate and a gold plating layer disposed on the seed conductive layer.
3. The integrated optical semiconductor device according to claim 2 ,
wherein the seed conductive layer includes a platinum layer disposed on the back surface of the substrate and a gold layer disposed on the platinum layer.
4. The integrated optical semiconductor device according to claim 1 ,
wherein a plurality of through-holes disposed in the second region of the substrate, each through-hole including a conductive material therein, and
wherein each of the second electrodes of the capacitors is electrically connected to the second conductive layer through the conductive material of at least one of the through-holes.
5. The integrated optical semiconductor device according to claim 4 ,
wherein the first conductive layer and the second conductive layer each include a seed conductive layer disposed on the hack surface of the substrate and a gold plating layer disposed on the seed conductive layer,
the seed conductive layer of the second conductive layer is further disposed on a side surface of each through-hole,
each through-hole is filled with the gold plating layer, and
the conductive material is composed of the seed conductive layer and the gold plating layer.
6. The integrated optical semiconductor device according to claim 1 , wherein the plurality of light receiving devices is arranged along a direction intersecting the first axis direction, and
the capacitors having the first electrodes connected to the corresponding light receiving devices are arranged along the direction intersecting the first axis direction.
7. The integrated optical semiconductor device according to claim 1 , wherein a groove makes the gap between the first and second conductive layers, and
the groove has a bottom reaching a midpoint of the substrate.
8. The integrated optical semiconductor device according to claim 1 , wherein each of the output optical waveguides of the multimode interference coupler is connected in contact with the corresponding light receiving device at a butt-jointed portion on boundary between the output optical waveguide and the light receiving device.
9. The integrated optical semiconductor device according to claim 1 , wherein the n-type semiconductor layer included in the multimode interference coupler is disposed on the entire principal surface in the first region of the substrate, and
the substrate is disposed between the n-type semiconductor layer and the first conductive layer in the first region.
10. An integrated optical semiconductor device assembly comprising:
an integrated optical semiconductor device; and
a circuit board on which the integrated optical semiconductor device is mounted, the circuit board having a first electrode layer and a second electrode layer electrically insulated from the first electrode layer,
wherein the integrated optical semiconductor device includes:
a substrate having a principal surface and a back surface opposite to the principal surface, the substrate including a first region and a second region arranged in a first axis direction;
a plurality of light receiving devices disposed on the principal surface in the second region of the substrate, each light receiving device including a low cladding layer including an n-type semiconductor layer and a light receiving layer disposed on the low cladding layer;
a multimode interference coupler disposed on the principal surface in the first region of the substrate, the multimode interference coupler including a first cladding layer and a core layer disposed on the first cladding layer, the multimode interference coupler including output optical waveguides that are optically coupled to corresponding light receiving devices;
a first conductive layer disposed on the back surface in the first region of the substrate;
a second conductive layer disposed on the back surface in the second region of the substrate, the second conductive layer being electrically insulated from the first conductive layer by a gap between the first and second conductive layers; and
a plurality of capacitors disposed on the principal surface in the second region of the substrate, each of the capacitors including a first electrode electrically connected to one of the light receiving devices and a second electrode electrically connected to the second conductive layer, and wherein
the substrate is made of a semi-insulating semiconductor material,
the first cladding layer of the multimode interference coupler includes the n-type semiconductor layer of the light receiving devices,
the first conductive layer of the integrated optical semiconductor device is mounted in contact with the first electrode layer of the circuit board,
the second conductive layer of the integrated optical semiconductor device is mounted in contact with the second electrode layer of the circuit board,
the second electrode layer of the circuit board is connected to ground level, and
the first electrode layer is electrically floating.