POWER SEMICONDUCTOR MODULE
The power semiconductor module includes a base plate, a semiconductor chip mounted on a first main surface of the base plate, and a heat sink connected to a second main surface of the base plate, wherein: a chamfered part is provided at an end portion of at least one side of the second main surface; and, when the cross section of the base plate is viewed in a state in which the base plate is fixed to the heat sink, the slope of the second main surface of the base plate is discontinuous at the boundary between the chamfered part and an area of the second main surface other than the chambered part, and the angle between the bottom surface of the chamfered part of the base plate and the surface on the side of the heat sink where the base plate is fixed is 5° to 30°.
1 . A power semiconductor module comprising:
a base plate;
a semiconductor chip mounted on a first main surface of the base plate; and
a heat sink connected to a second main surface of the base plate,
wherein a chamfered portion is provided at an end portion of at least one side of the second main surface, and
in a state where the base plate is fixed to the heat sink, when a cross section of the base plate is viewed, an inclination of the second main surface of the base plate is discontinuous at a boundary between the chamfered portion and a region of the second main surface of the base plate other than the chamfered portion, and an angle formed between a bottom surface of the chamfered portion of the base plate and a surface of the heat sink on a side where the base plate is fixed is 5° or more and 30° or less.
2 . The power semiconductor module according to claim 1 , wherein a surface of the second main surface of the base plate other than the chamfered portion is a flat surface in a state before the base plate is fixed to the heat sink.
3 . The power semiconductor module according to claim 1 , further comprising a protrusion portion in which a surface of the second main surface of the base plate other than the chamfered portion protrudes toward the heat sink in a substantially spherical shape in a state before the base plate is fixed to the heat sink.
4 . The power semiconductor module according to claim 1 , wherein the semiconductor chip is disposed not to overlap with the chamfered portion of the base plate.
5 . The power semiconductor module according to claim 1 , wherein
four corners of the base plate have screw holes for screw fastening to the heat sink, and
a boundary between the chamfered portion and a surface of the second main surface of the base plate other than the chamfered portion is provided outside a region surrounded by joining centers of the screw holes to each other by a straight line.
6 . The power semiconductor module according to claim 1 , wherein
four corners of the base plate have screw holes for screw fastening to the heat sink, and
the chamfered portion is not formed around the screw holes.
7 . The power semiconductor module according to claim 1 , wherein
four corners of the base plate have screw holes for screw fastening to the heat sink,
the chamfered portion is formed in a region other than a periphery of the screw hole, and
a boundary between the chamfered portion and a surface of the second main surface of the base plate other than the chamfered portion is provided inside a region surrounded by joining centers of the screw holes to each other by a straight line.
8 . The power semiconductor module according to claim 1 , wherein the chamfered portion of the base plate is provided on a side where a distance between the semiconductor chip and a side surface of the base plate is small among sides of the base plate.
9 . The power semiconductor module according to claim 1 , wherein the chamfered portion is provided on at least a side that is in a downward direction when the power semiconductor module is mounted among sides of the base plate.
10 . The power semiconductor module according to claim 1 , wherein a maximum value of a distance between a bottom surface of the chamfered portion and an upper surface of the heat sink is 0.5 mm or more and 2.5 mm or less.
11 . The power semiconductor module according to claim 1 , wherein a material of the base plate is AlSiC or MgSiC.