PLATING DEFECTS ESTIMATING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A plating defects estimating method comprising a measuring step of measuring physical properties of a surface of an underlayer before a plating pre-treatment step of carrying out a plating pre-treatment on the underlayer; and an estimating step of estimating a degree of development of spikes on the underlayer, the spikes resulting from plating, based on the measured physical properties. A semiconductor device manufacturing method, comprising: an underlayer forming step of forming an underlayer on a surface of a semiconductor wafer; a plating pre-treatment step of carrying out a plating pre-treatment on the underlayer; a plating step of plating the underlayer subjected to the pre-treatment; a measuring step of measuring physical properties of a surface of the underlayer before the plating pre-treatment step; and an estimating step of estimating a degree of development of spikes on the underlayer, the spikes resulting from plating, based on the measured physical properties.
1 . A plating defects estimating method comprising:
a measuring step of measuring physical properties of a surface of an underlayer before a plating pre-treatment step of carrying out a plating pre-treatment on the underlayer; and
an estimating step of estimating a degree of development of spikes on the underlayer, the spikes resulting from plating, based on the measured physical properties.
2 . The plating defects estimating method according to claim 1 , wherein
the measuring step is a step of making optical measurement on a surface of the underlayer.
3 . The plating defects estimating method according to claim 2 , wherein
when reflectance on a surface of the underlayer is equal to or larger than a threshold, the degree of development of spikes is estimated to be low.
4 . The plating defects estimating method according to claim 2 , wherein
when brightness of a surface of the underlayer is equal to or larger than a threshold, the degree of development of spikes is estimated to be low.
5 . The plating defects estimating method according to claim 1 , wherein
the measuring step is a step of making X-ray diffraction measurement on a surface of the underlayer.
6 . The plating defects estimating method according to claim 5 , wherein
when a crystallite diameter of a surface of the underlayer is equal to or larger than a threshold, the degree of development of spikes is estimated to be low.
7 . The plating defects estimating method according to claim 1 , wherein
the underlayer is made of aluminum or aluminum alloy.
8 . The plating defects estimating method according to claim 1 , wherein
the plating is nickel plating or nickel alloy plating.
9 . A semiconductor device manufacturing method, comprising:
an underlayer forming step of forming an underlayer on a surface of a semiconductor wafer;
a plating pre-treatment step of carrying out a plating pre-treatment on the underlayer;
a plating step of plating the underlayer subjected to the pre-treatment;
a measuring step of measuring physical properties of a surface of the underlayer before the plating pre-treatment step; and
an estimating step of estimating a degree of development of spikes on the underlayer, the spikes resulting from plating, based on the measured physical properties.
10 . The semiconductor device manufacturing method according to claim 9 , wherein
the measuring step is a step of measuring physical properties of a surface of the underlayer in a central part of the semiconductor wafer.
11 . The semiconductor device manufacturing method according to claim 9 , wherein
the measuring step is a step of measuring physical properties of a surface of the underlayer in a peripheral part of the semiconductor wafer.
12 . The semiconductor device manufacturing method according to claim 9 , wherein
when the degree of development of spikes, the degree of development being estimated at the estimating step, is larger than a given threshold, the plating pre-treatment step and the plating step are stopped.
13 . The semiconductor device manufacturing method according to claim 9 , wherein
details of the plating pre-treatment step are made different between a case where the degree of development of spikes, the degree of development being estimated at the estimating step, is larger than a given threshold and a case where the degree of development of spikes is smaller than the given threshold.