Memory system
A memory controller can select a first read retry process having a first average required time when reliability of a target area of a nonvolatile memory on which a read process is to be executed satisfies a criteria, the first read retry process including a shift read operation. The memory controller can select a second read retry process having a second average required time that is longer than the first average required time when the reliability of the target area does not satisfy the criteria, the second read retry processes including a tracking operation that is executed before any one of the plurality of read operations of the shift read operation. The memory controller can execute the selected read retry process.
1 . A memory system comprising:
a nonvolatile memory; and
a controller configured to:
select a first one of a plurality of read retry processes having a first average required time when reliability of a target area of the nonvolatile memory on which a read process is to be executed satisfies a criteria, the first one of the plurality of read retry processes including at least a shift read operation, the shift read operation including a plurality of read operations on the target area respectively using different read voltages and an error correction processes for each of the plurality of read operations, based on a shift table that specifies the different read voltages and an order of the different read voltages to be used;
select a second one of the plurality of read retry processes having a second average required time that is longer than the first average required time when the reliability of the target area does not satisfy the criteria, the second one of the plurality of read retry processes including at least a tracking operation that is executed before any one of the plurality of read operations of the shift read operation, the tracking operation including a plurality of single-level read operations in each of which the number of memory cells that turn on is counted; and
execute the selected read retry process.
2 . The memory system according to claim 1 ,
wherein the controller is configured to determine whether the reliability of the target area satisfies the criteria based on an indicator showing characteristics of an area of the nonvolatile memory, wherein the area is larger than the target area and includes the target area.
3 . The memory system according to claim 1 ,
wherein the controller is configured to determine whether the reliability of the target area satisfies the criteria based on an indicator showing characteristics of an area of the nonvolatile memory, wherein the area is smaller than the target area and is part of the target area.
4 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when the number of write-and-erase cycles of the target area is smaller than a first threshold and (ii) select the second one of the plurality of read retry processes when the number of write-and-erase cycles of the target area is larger than the first threshold.
5 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when the number of times of reading of the target area is smaller than a second threshold and (ii) select the second one of the plurality of read retry processes when the number of times of reading of the target area is larger than the second threshold.
6 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when a refresh operation for rewriting data of a first block including the target area to a second block is performed according to elapse of a predetermined period and (ii) select the second one of the plurality of read retry processes when the refresh operation is performed before elapse of the predetermined period.
7 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when a time interval of a refresh operation for rewriting data of a first block including the target area to a second block is larger than a third threshold and (ii) select the second one of the plurality of read retry processes when a time interval of the refresh operation is smaller than the third threshold.
8 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when an error correction ability to correct an error in data stored in the target area is a first correction ability and (ii) select the second one of the plurality of read retry processes when the error correction ability to correct the error in the data stored in the target area is a second correction ability lower than the first correction ability.
9 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when temperature during writing in the target area is higher than a fourth threshold and (ii) select the second one of the plurality of read retry processes when temperature during writing in the target area is lower than the fourth threshold.
10 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when a word line corresponding to a memory cell including the target area exists at a first position in a block and (ii) select the second one of the plurality of read retry processes when the word line exists at a second position closer to an end of the block than the first position in the block.
11 . The memory system according to claim 1 ,
wherein the controller is configured to (i) select the first one of the plurality of read retry processes when elapse time from start-up of the memory system is longer than a fifth threshold and (ii) select the second one of the plurality of read retry processes when elapse time from start-up of the memory system is shorter than the fifth threshold.
12 . A method of controlling a nonvolatile memory, comprising:
selecting a first one of a plurality of read retry processes having a first average required time when reliability of a target area of the nonvolatile memory on which a read process is to be executed satisfies a criteria, the first one of the plurality of read retry processes including at least a shift read operation, the shift read operation including a plurality of read operations on the target area respectively using different read voltages and an error correction processes for each of the plurality of read operations, based on a shift table that specifies the different read voltages and an order of the different read voltages to be used;
selecting a second one of the plurality of read retry processes having a second average required time that is longer than the first average required time when the reliability of the target area does not satisfy the criteria, the second one of the plurality of read retry processes including at least a tracking operation that is executed before any one of the plurality of read operations of the shift read operation, the tracking operation including a plurality of single-level read operations in each of which the number of memory cells that turn on is counted; and
executing the selected read retry process.
13 . The method according to claim 12 ,
wherein whether the reliability of the target area satisfies the criteria is determined based on an indicator showing characteristics of an area of the nonvolatile memory, wherein the area is larger than the target area and includes the target area.
14 . The method according to claim 12 ,
wherein whether the reliability of the target area satisfies the criteria is determined based on an indicator showing characteristics of an area of the nonvolatile memory, wherein the area is smaller than the target area and is part of the target area.
15 . A controller connectable to a nonvolatile memory, comprising:
a circuit configured to:
select a first one of a plurality of read retry processes having a first average required time when reliability of a target area of the nonvolatile memory on which a read process is to be executed satisfies a criteria, the first one of the plurality of read retry processes including at least a shift read operation, the shift read operation including a plurality of read operations on the target area respectively using different read voltages and an error correction processes for each of the plurality of read operations, based on a shift table that specifies the different read voltages and an order of the different read voltages to be used;
select a second one of the plurality of read retry processes having a second average required time that is longer than the first average required time when the reliability of the target area does not satisfy the criteria, the second one of the plurality of read retry processes including at least a tracking operation that is executed before any one of the plurality of read operations of the shift read operation, the tracking operation including a plurality of single-level read operations in each of which the number of memory cells that turn on is counted; and
execute the selected read retry process.
16 . The controller according to claim 15 ,
wherein the circuit is configured to determine whether the reliability of the target area satisfies the criteria based on an indicator showing characteristics of an area of the nonvolatile memory, wherein the area is larger than the target area and includes the target area.
17 . The controller according to claim 15 ,
wherein the circuit is configured to determine whether the reliability of the target area satisfies the criteria based on an indicator showing characteristics of an area of the nonvolatile memory, wherein the area is smaller than the target area and is part of the target area.