Light emitting diode device
A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.
1 . A light emitting diode device, comprising:
a substrate having a first surface and a second surface opposite thereto;
a conductive via penetrating from the first surface to the second surface;
a first conductive pad and a second conductive pad respectively disposed on the first surface and the second surface and in contact with the conductive via;
a driving chip disposed on the first surface;
a first flat layer disposed over the first surface and covering the driving chip and the first conductive pad;
a second flat layer disposed between the first flat layer and the substrate and at least covering the driving chip;
a first redistribution layer disposed on the first flat layer and electrically connected to the driving chip;
a second redistribution layer disposed between the first flat layer and the second flat layer and electrically connected to the first redistribution layer;
a red light emitting diode, a green light emitting diode, and a blue light emitting diode flip-chip bonded to and in contact with the first redistribution layer; and
an encapsulating layer covering the first redistribution layer and the red light emitting diode, the green light emitting diode, and the blue light emitting diode.
2 . The light emitting diode device of claim 1 , wherein a vertical projection of the red light emitting diode, the green light emitting diode, and the blue light emitting diode overlaps with a vertical projection of the driving chip.
3 . The light emitting diode device of claim 1 , further comprising a reflective layer disposed on a top surface of the first flat layer.
4 . The light emitting diode device of claim 3 , wherein the reflective layer comprises a silver reflector, an aluminum reflector, or a distributed Bragg reflector.
5 . The light emitting diode device of claim 1 , wherein a top surface of the driving chip is higher than a top surface of the first conductive pad.
6 . The light emitting diode device of claim 1 , wherein a top surface of the driving chip is lower than a top surface of the first conductive pad.
7 . The light emitting diode device of claim 6 , wherein a top surface of the first flat layer is higher than the top surface of the first conductive pad.
8 . The light emitting diode device of claim 1 , wherein the second flat layer comprises an oxide or a photoresistive insulating material.
9 . The light emitting diode device of claim 1 , wherein an upper surface of the first redistribution layer is a black oxide treatment surface.
10 . The light emitting diode device of claim 1 , wherein the driving chip is a micro-driving chip.
11 . The light emitting diode device of claim 1 , wherein the first flat layer comprises an oxide or a photoresistive insulating material.
12 . The light emitting diode device of claim 1 , wherein a top surface of the first flat layer has a surface roughness.
13 . The light emitting diode device of claim 1 , further comprising an additive disposed in the encapsulating layer.
14 . The light emitting diode device of claim 1 , wherein the red light emitting diode, the green light emitting diode, and the blue light emitting diode are micro-LED.
15 . The light emitting diode device of claim 1 , wherein the first redistribution layer includes copper, nickel, gold, aluminum, or silver.