Granted Patent B2

US 12,402,461 · App. 18/593,871 · Granted Aug 26, 2025

Inventors: Qiming Li (Albuquerque, NM); Qunchao Xu (Shanghai, CN)

Assignee: JADE BIRD DISPLAY (SHANGHAI) LIMITED

H10H29/10H01L25/0753H10D86/40H10D86/60H10H20/856H10H20/857H10H20/0364

Abstract

Claims (57)

1. A single pixel multi-color micro light-emitting diode (LED) device for a display panel, comprising:

a substrate supporting a pixel driver;

a metal bonding layer on top of the substrate;

a first LED structure layer on top of the metal bonding layer; and

a second LED structure layer on top of the first LED structure layer;

wherein:

the first LED structure layer and the second LED structure layer substantially overlap laterally with one another to form a light path that combines light emitted from the first LED structure layer and light emitted from the second LED structure layer;

a first-type electrode contacts a lower portion of the first LED structure layer, a lower portion of the second LED structure layer, and the metal bonding layer, respectively, and the first-type electrode electrically connects the pixel driver to the lower portion of the first LED structure layer and the lower portion of the second LED structure layer through the metal bonding layer; and

a first second-type electrode is electrically connected to an upper portion of the first LED structure layer, and a second second-type electrode is electrically connected to an upper portion of the second LED structure layer.

2. The single pixel multi-color micro LED device according to claim 1 , wherein the first-type electrode is a single continuous metal layer in direct contact with the lower portion of the first LED structure layer, the lower portion of the second LED structure layer, and the metal bonding layer, respectively.

3. The single pixel multi-color micro LED device according to claim 1 , further comprising a first transparent bonding layer formed between the first LED structure layer and the second LED structure layer.

4. The single pixel multi-color micro LED device according to claim 3 , wherein:

the metal bonding layer is about 0.1 micron to about 3 microns; and

the first transparent bonding layer is about 0.1 micron to about 5 microns.

5. The single pixel multi-color micro LED device according to claim 1 , wherein the pixel driver comprises a thin-film transistor pixel driver or a silicon CMOS pixel driver.

6. The single pixel multi-color micro LED device according to claim 1 , further comprising a third LED structure layer on top of the second LED structure layer, wherein:

the third LED structure layer substantially overlaps laterally with the first LED structure layer and the second LED structure layer, and the light path further combines light emitted from the third LED structure layer;

the first-type electrode further contacts a lower portion of the third LED structure layer and electrically connects the pixel driver to the lower portion of the third LED structure layer through the metal bonding layer; and

a third second-type electrode is electrically connected to an upper portion of the third LED structure layer.

7. The single pixel multi-color micro LED device according to claim 6 , wherein an insulation layer is deposited on a top surface of the third LED structure layer and side walls of the first LED structure layer, the second LED structure layer, and the third LED structure layer.

8. The single pixel multi-color micro LED device according to claim 7 , wherein:

the insulation layer comprises a plurality of holes that expose a plurality of contact points for the first-type electrode to contact and electrically connect to the lower portion of the first LED structure layer, the lower portion of the second LED structure layer, and the lower portion of the third LED structure layer; and

a side wall of the metal bonding layer is exposed to contact and electrically connect to the first-type electrode.

9. The single pixel multi-color micro LED device according to claim 7 , wherein:

the insulation layer comprises a first hole that exposes a first contact point of the upper portion of the first LED structure layer, the first contact point contacting and electrically connecting to the first second-type electrode;

the insulation layer comprises a second hole that exposes a second contact point of the upper portion of the second LED structure layer, the second contact point contacting and electrically connecting to the second second-type electrode; and

the insulation layer comprises a third hole that exposes a third contact point of the upper portion of the third LED structure layer, the third contact point contacting and electrically connecting to the third second-type electrode.

10. The single pixel multi-color micro LED device according to claim 6 , wherein each of the first LED structure layer, the second LED structure layer, and the third LED structure layer is selected from one or more structures from the group consisting of a III-V nitride epitaxial structure, a III-V arsenide epitaxial structure, a III-V phosphide epitaxial structure, and a III-V antimonide epitaxial structure.

11. The single pixel multi-color micro LED device according to claim 6 , wherein each of the first-type electrode, the first second-type electrode, the second second-type electrode, and the third second-type electrode comprises one or more metals selected from the group consisting of aluminum, silver, rhodium, zinc, gold, germanium, nickel, chromium, platinum, tin, copper, tungsten, indium-tin-oxide, palladium, indium, and titanium.

12. The single pixel multi-color micro LED device according to claim 6 , wherein the first LED structure layer, the second LED structure layer, and the third LED structure layer each produce light of different visible wavelengths.

13. The single pixel multi-color micro LED device according to claim 6 , wherein:

the single pixel multi-color micro LED device has a cross-sectional shape of a pyramid that has a bottom layer with the longest lateral dimension and a top layer with the shortest lateral dimension; and

the longest lateral dimension is about 1 micron to about 500 microns.

14. The single pixel multi-color micro LED device according to claim 6 , further comprising:

a first reflection layer between the substrate and the first LED structure layer;

a second reflection layer between the first LED structure layer and the second LED structure layer; and

a third reflection layer between the second LED structure layer and the third LED structure layer.

15. The single pixel multi-color micro LED device according to claim 14 , wherein:

at least one of the first reflection layer, the second reflection layer, and the third reflection layer comprises a distributed Bragg reflector (DBR) structure; and

each of the first reflection layer, the second reflection layer, and the third reflection layer is about 0.1 micron to about 5 microns.

16. A micro light-emitting diode (LED) display chip, comprising:

a substrate supporting an array of pixel drivers; and

an array of single pixel multi-color micro LED devices, each single pixel multi-color micro LED device of the array of single pixel multi-color micro LED devices being electrically connected to a corresponding pixel driver of the array of pixel drivers,

wherein:

each single pixel multi-color micro LED device comprises a metal bonding layer on top of the substrate the corresponding pixel driver, a first LED structure layer on top of the metal bonding layer, and a second LED structure layer on top of the first LED structure layer;

within each single pixel multi-color micro LED device, the first LED structure layer and the second LED structure layer substantially overlap laterally with one another to form a light path that combines light emitted from the first LED structure layer and light emitted from the second LED structure layer;

within each single pixel multi-color micro LED device, a first-type electrode contacts a lower portion of the first LED structure layer, a lower portion of the second LED structure layer, and the metal bonding layer, respectively, and the first-type electrode electrically connects the corresponding pixel driver to the lower portion of the first LED structure layer and the lower portion of the second LED structure layer through the metal bonding layer; and

within each single pixel multi-color micro LED device, a first second-type electrode is electrically connected to an upper portion of the first LED structure layer, and a second second-type electrode is electrically connected to an upper portion of the second LED structure layer.

17. The micro LED display chip according to claim 16 , wherein:

each single pixel multi-color micro LED device further comprises a third LED structure layer;

within each single pixel multi-color micro LED device, the third LED structure layer substantially overlaps laterally with the first LED structure layer and the second LED structure layer, and the light path further combines light emitted from the third LED structure layer;

within each single pixel multi-color micro LED device, the first-type electrode further contacts a lower portion of the third LED structure layer and electrically connects the corresponding pixel driver to the lower portion of the third LED structure layer through the metal bonding layer; and

within each single pixel multi-color micro LED device, a third second-type electrode is electrically connected to an upper portion of the third LED structure layer.

18. The micro LED display chip according to claim 17 , wherein:

first second-type electrodes of single pixel multi-color micro LED devices of the array of single pixel multi-color micro LED devices are connected to a first common electrode;

second second-type electrodes of the single pixel multi-color micro LED devices are connected to a second common electrode; and

third second-type electrodes of the single pixel multi-color micro LED devices are connected to a third common electrode.

Assignments (1)

Continuity (4)

References Cited (50)