Processing method of bonded wafer
A method of processing a bonded wafer includes a modified layer forming step of applying a laser beam to a first wafer while positioning a focused spot FP of the laser beam within the first wafer to form a modified layer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and a step of grinding the reverse side of the first wafer to thin it. In the modified layer forming step, a plurality of spaced modified layers are formed radially inwardly from the outer circumferential portion of the first wafer, and a line interconnecting the modified layers forms a depression angle ranging from 30 to 80 degrees toward the outer circumferential portion, the modified layers being joined to each other by cracks to form a removal initiating point for removing a chamfered outermost circumferential edge.
1 . A method of processing a bonded wafer including a first wafer and a second wafer that are bonded to each other by a bonding layer interposed therebetween, the first wafer having on a face side thereof a device region where a plurality of devices are fabricated and an outer circumferential excessive region surrounding the device region and having a chamfered outermost circumferential edge, and the face side being bonded to the second wafer by the bonding layer, the method comprising:
a modified layer forming step of applying a laser beam having a wavelength transmittable through the first wafer to the first wafer from a reverse side thereof while positioning a focused spot of the laser beam within the first wafer to form a modified layer in the first wafer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer; and,
after the modified layer forming step, a grinding step of holding the second wafer on a chuck table and grinding the reverse side of the first wafer to thin down the first wafer, wherein,
in the modified layer forming step, a plurality of modified layers are formed in the first wafer at positions spaced in a thicknesswise direction of the first wafer radially inwardly from the outer circumferential portion of the first wafer, and a line interconnecting the modified layers forms a depression angle ranging from 30 to 80 degrees toward the outer circumferential portion of the first wafer, the modified layers being joined to each other by cracks to form a removal initiating point for removing the chamfered outermost circumferential edge.
2 . The method of processing a bonded wafer according to claim 1 , a plurality of the modified layers are spaced at an interval in a range from 10 to 380 μm thicknesswise across the first wafer.
3 . The method of processing a bonded wafer according to claim 1 , wherein, in the modified layer forming step, a plurality of the modified layers are formed at positions spaced parallel to a plane of the first wafer radially inwardly from the outer circumferential portion of the first wafer, and the cracks are developed in and along the bonding layer toward the outer circumferential portion of the first wafer.
4 . The method of processing a bonded wafer according to claim 3 , wherein the modified layers spaced parallel to the plane of the first wafer are spaced at an interval in a range from 450 to 800 μm along the plane of the first wafer.
5 . The method of processing a bonded wafer according to claim 1 , wherein the focused spot of the laser beam includes multi-focused spots to form the modified layer.