Transversely-excited film bulk acoustic filters with symmetric layout
There are disclosed acoustic resonators and radio frequency filter devices. A back surface of a single-crystal piezoelectric plate is attached to a surface of a substrate except for portions of the piezoelectric plate forming a plurality of diaphragms, each of which spans a respective cavity in the substrate. A conductor pattern is formed on the front surface, the conductor pattern including interdigital transducers (IDTs) of one or more pairs of sub-resonators, each pair consisting of two sub-resonators. The IDT of each sub-resonator includes interleaved fingers disposed on a respective diaphragm. The piezoelectric plate and the IDTs are configured such that respective radio frequency signals applied to each IDT excite respective shear primary acoustic modes in the respective diaphragms. The two sub-resonators of each pair of sub-resonators are positioned symmetrically about a central axis.
1. A filter device comprising:
at least one piezoelectric layer; and
a conductor pattern at a surface of the at least one piezoelectric layer and having a plurality of interdigital transducers (IDTs) that have interleaved fingers for one or more pairs of sub-resonators,
wherein each sub-resonator of the one or more pairs of sub-resonators comprises a plurality of pairs of interleaved fingers that are positioned on the at least one piezoelectric layer and above a respective cavity of a plurality of cavities of the filter device,
wherein each sub-resonator of the one or more pairs of sub-resonators are positioned symmetrically about a central axis of the filter device,
wherein the interleaved fingers of each sub-resonator of at least one pair of sub-resonators has a first plurality of fingers extending from a first busbar that is coupled to an input path of the filter device, and
wherein the interleaved fingers of each sub-resonator of the at least one pair of sub-resonators has a second plurality of fingers extending from a second busbar that is coupled to an output path of the filter device.
2. The filter device according to claim 1 , further comprising:
a substrate having a base layer and an intermediate dielectric layer with the plurality of cavities extending in the intermediate layer.
3. A filter device comprising:
at least one piezoelectric layer; and
a conductor pattern on a surface of the at least one piezoelectric layer, the conductor pattern comprising a plurality of interdigital transducers (IDTs) each having interleaved fingers forming a sub-resonator of a plurality of sub-resonators of a series resonator of the filter device,
wherein each sub-resonator of the plurality of sub-resonators of the series resonator comprises a plurality of pairs of interleaved fingers that are positioned above a respective cavity of a plurality of cavities of the filter device,
wherein the respective sub-resonators of at least one pair of the plurality of pairs of sub-resonators are positioned symmetrically about a central axis of the filter,
wherein the interleaved fingers of each sub-resonator of the plurality of sub-resonators of the series resonator has a first plurality of fingers extending from a first busbar that is coupled to an input path of the filter device,
wherein the interleaved fingers of each sub-resonator of the plurality of sub-resonators of the series resonator has a second plurality of fingers extending from a second busbar that is coupled to an output path of the filter device.
4. The filter device according to claim 1 , wherein the central axis of the filter device extends about a central axis of the at least one piezoelectric layer.
5. The filter device according to claim 1 , wherein each sub-resonator of the at least one pair of sub-resonators has a same electrical and physical configuration as each other by having a common aperture, a common length, a common pitch and a common IDT finger width.
6. The filter device according to claim 1 , wherein each sub-resonator of the at least one pair of sub-resonators has a same electrical and physical configuration as each other by having a common pitch.
7. The filter device according to claim 1 , wherein:
the conductor pattern comprises two or more pairs of sub-resonators, and
the sub-resonators of each pair of the two or more pairs of sub-resonators are electrically connected in parallel with each other.
8. The filter device according to claim 1 , wherein:
the at least one pair of sub-resonators comprises a first pair of sub-resonators and a second pair of sub-resonators,
the respective sub-resonators of the first pair of sub-resonators are electrically connected in parallel,
the respective sub-resonators of the second pair of sub-resonators are electrically connected in parallel, and
the first pair of sub-resonators and the second pair of sub-resonators are electrically connected in series with each other.
9. The filter device according to claim 2 , wherein the conductor pattern is on a surface of the at least one piezoelectric layer that is opposite to the substrate.
10. The filter device according to claim 1 , wherein each sub-resonator of the at least one pair of sub-resonators extends in a lengthwise direction that is normal to a central axis of the filter device.
11. The filter device according to claim 10 , wherein the central axis of the filter device is a straight line that divides the at least one piezoelectric layer into two sections of roughly equal area and the conductor pattern has a symmetrical arrangement of the sub-resonators of the at least one pair of sub-resonators, such that there is an even distribution of the sub-resonators over the two sections of the area of the at least one piezoelectric layer.
12. A filter device comprising:
at least one piezoelectric layer; and
a plurality of interdigital transducers (IDTs) at a surface of the at least one piezoelectric layer and each having interleaved fingers for respective resonators of a plurality of pairs of sub-resonators,
wherein the respective sub-resonators of at least one pair of the plurality of pairs of sub-resonators are positioned symmetrically about a central axis of the filter device,
wherein each sub-resonator of the at least one pair of sub-resonators has a same electrical and physical configuration as each other,
wherein the plurality of pairs of sub-resonators includes two or more series sub-resonators and two or more shunt sub-resonators,
wherein the two or more series resonators are disposed in sequence along the central axis of the device, and
wherein the interleaved fingers of each sub-resonator of the two or more series resonators has a first plurality of fingers extending from a first busbar that is coupled to an input of the filter device and a second plurality of fingers extending from a second busbar that is coupled to an output of the filter device.
13. The filter device according to claim 12 , wherein the two or more shunt resonators are disposed outboard of the series resonators.
14. The filter device according to claim 12 , further comprising:
a substrate having a base layer and an intermediate dielectric layer with a plurality of cavities extending therein,
wherein the at least one piezoelectric layer is attached to a surface of the substrate and has a plurality of portions that are each over a respective cavity of the plurality of cavities, and
wherein the interleaved fingers of each respective IDT of each sub-resonator is on a respective portion of the plurality of portions of the at least one piezoelectric layer over the plurality of cavities, respectively.
15. The filter device according to claim 12 , wherein the central axis of the filter device extends about a central axis of the at least one piezoelectric layer.
16. The filter device according to claim 12 , wherein each sub-resonator of the at least one pair of sub-resonators has a same electrical and physical configuration as each other by having a common aperture, a common length, a common pitch and a common IDT finger width.
17. The filter device according to claim 12 , wherein:
the at least one pair of sub-resonators comprises a first pair of sub-resonators and a second pair of sub-resonators,
the respective sub-resonators of the first pair of sub-resonators are electrically connected in parallel,
the respective sub-resonators of the second pair of sub-resonators are electrically connected in parallel, and
the first pair of sub-resonators and the second pair of sub-resonators are electrically connected in series with each other to form the two or more series resonators.
18. The filter device according to claim 14 , wherein the plurality of IDTs are on a surface of the at least one piezoelectric layer that is opposite to the substrate.
19. The filter device according to claim 12 , wherein each sub-resonator of the at least one pair of sub-resonators extends in a lengthwise direction that is normal to a central axis of the filter.
20. The filter device according to claim 19 , wherein the central axis of the filter is a straight line that divides the at least one piezoelectric layer into two sections of roughly equal area and the respective IDTs has a symmetrical arrangement for the sub-resonators of the at least one pair of sub-resonators, such that there is an even distribution of the sub-resonators over the two sections of the area of the at least one piezoelectric layer.