Monitoring radical particle concentration using mass spectrometry
A monitoring system detects and measures a quantity of radical particles within a gas. A test chamber is coupled to a flow channel that transmits a gas. The test chamber defines an aperture connecting the test chamber and the flow channel, and the aperture permits a subset of the gas to enter the test chamber from the flow channel. An ionizer is positioned within the test chamber and generates radical ions from radical particles of the subset of the gas. A mass spectrometer measures a quantity of the radical ions, thereby providing a measurement of the radical particles in the gas.
1. A radical particle monitor, comprising:
a tubular flow channel configured to transmit, along an axis thereof, a gas including radicals;
a test chamber coupled to the flow channel so as to be offset from the axis of the flow channel, wherein an interior of the test chamber and an interior of the flow channel are in fluid communication with one another via an aperture located between the interior of the flow channel and the interior of the test chamber;
an ionizer positioned within the interior of the test chamber, wherein the ionizer has a line-of-sight with the aperture; and
a mass analyzer coupled to the test chamber.
2. The radical particle monitor of claim 1 , wherein the aperture is formed in a side wall of the flow channel.
3. The radical particle monitor of claim 1 , wherein the test chamber includes a sampler extending towards the axis of the flow channel, wherein the aperture is formed in the sampler.
4. The radical particle monitor of claim 3 , wherein the sampler extends from a sidewall of the flow channel.
5. The radical particle monitor of claim 3 , wherein the sampler is conical.
6. The radical particle monitor of claim 3 , wherein the sampler is cylindrical.
7. The radical particle monitor of claim 3 , wherein a surface of the sampler is composed of a non-metal material.
8. The radical particle monitor of claim 7 , wherein the non-metal material is a material selected from the group consisting of glass, quartz, sapphire, aluminum nitride, aluminum oxide, and SiO 2 .
9. The radical particle monitor of claim 3 , wherein a surface of the sampler is composed of a metal material.
10. The radical particle monitor of claim 9 , wherein the metal material is a material selected from the group consisting of aluminum and stainless steel.
11. The radical particle monitor of claim 3 , wherein the sampler is electrically conductive and is coupled to a bias voltage source.
12. The radical particle monitor of claim 3 , wherein the sampler includes an internal conduit configured to transport a coolant.
13. The radical particle monitor of claim 3 , further comprising a conduit coupled between the test chamber and the flow channel, wherein the sampler extends through the conduit.
14. The radical particle monitor of claim 1 , wherein the aperture has a diameter less than 1 mm.
15. The radical particle monitor of claim 1 , wherein the ionizer is positioned within 4 inches of the aperture.
16. The radical particle monitor of claim 15 , wherein the ionizer is positioned within 0.5 inches of the aperture.
17. The radical particle monitor of claim 1 , further comprising a stopper configured to selectively seal the aperture.
18. A radical particle monitor for measuring radicals within a semiconductor process chamber, the radical particle monitor comprising:
a test chamber having an aperture fluidically connecting an interior of the test chamber with an interior of the semiconductor process chamber;
an ionizer positioned within the interior of the test chamber, wherein the ionizer has a line-of-sight with the aperture; and
a mass analyzer coupled to the test chamber.
19. The radical particle monitor of claim 18 , wherein the aperture is defined by a structure having a surface formed of a material selected from the group consisting of glass, quartz, sapphire, aluminum nitride, aluminum oxide, SiO 2 , aluminum and stainless steel.
20. The radical particle monitor of claim 17 , further comprising a sampler extending into the process chamber, wherein the aperture is formed in the sampler.