IP Library › Granted Patent US 12,453,217
Granted Patent B2
US 12,453,217 · App. 18/654,802 · Granted Oct 21, 2025

Light-emitting element, manufacturing method therefor, and display device having light-emitting element

Inventors: Su Mi Moon (Yongin-si, KR); Eun Ju Kim (Yongin-si, KR); Hyun Min Cho (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
H10H20/84H01L25/167H10H20/013H10H20/0133H10H20/821H10H20/034
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Quick Facts
Patent No.
US 12,453,217
App. No.
18/654,802
Granted
Oct 21, 2025
Kind
B2
Abstract

A light emitting element includes an emission stacked pattern and an insulating film. The emission stack pattern includes a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer. The insulating film surrounds an outer surface of the emission stacked pattern and has a non-uniform thickness.

Claims (35)

1. A light emitting element comprising:

an emission stacked pattern having a predetermined shape in a view comprising a cross-sectional direction, the emission stacked pattern including a first end, a second end, a side portion completely surrounding the emission stacked pattern, the side portion being between the first end and the second end and extending from the first end to the second end in a vertical planar direction different from the cross-sectional direction, a first semiconductor layer adjacent to the first end, a second semiconductor layer adjacent to the second end, and an active layer between the first semiconductor layer and the second semiconductor layer; and

an insulating layer, at least a portion of the insulating layer covering the side portion of the emission stacked pattern, including an inner surface adjacent to the emission stacked pattern in the cross-sectional direction and an outer surface spaced apart from the inner surface; wherein

the outer surface includes a first outer surface position and a second outer surface position different from the first outer surface position,

the emission stacked pattern and the first outer surface position are spaced apart by a first distance,

the emission stacked pattern and the second outer surface position are spaced apart by a second distance, and

the first distance and the second distance are different each other.

2. The light emitting element of claim 1 , wherein

the first distance is a first shortest distance between the emission stacked pattern and the first outer surface position, and

the second distance is a second shortest distance between the emission stacked pattern and the second outer surface position.

3. The light emitting element of claim 1 , wherein the cross-sectional direction is parallel to a plane in which the first outer surface position and the second outer surface position are arranged.

4. The light emitting element of claim 1 , wherein the first outer surface position and the second outer surface position are formed on a plane parallel to a surface of the active layer adjacent to the first semiconductor layer.

5. The light emitting element of claim 1 , wherein

the inner surface includes a first inner surface position and a second inner surface position different from the first inner surface position, wherein

the first distance is a distance between the first inner surface position and the first outer surface position, and

the second distance is a distance between the second inner surface position and the second outer surface position.

6. The light emitting element of claim 5 , wherein the first inner surface position and the second inner surface position are formed on a plane parallel to a surface of the active layer adjacent to the first semiconductor layer.

7. The light emitting element of claim 6 , wherein the inner surface has a shape corresponding to an outer shape of the side portion of the emission stacked pattern.

8. The light emitting element of claim 7 , wherein the inner surface has a non-uniform thickness in the view comprising the cross-sectional direction.

9. The light emitting element of claim 1 , wherein

the predetermined shape is a polygon,

the inner surface includes a first inner surface position disposed at a vertex of the polygon, and

the second outer surface position is disposed on one of sides of the polygon.

10. The light emitting element of claim 1 , wherein

the insulating layer includes a first part that surrounds the side portion of the emission stacked pattern and a second part extending from the first part in the cross-sectional direction, and

the first outer surface position is formed on the second part and the second outer surface position is formed on the first part.

11. The light emitting element of claim 10 , wherein the second part includes a plurality of second parts.

12. The light emitting element of claim 1 , wherein the light emitting element has a rod-like shape.

13. The light emitting element of claim 1 , wherein the insulating layer continuously covers the first semiconductor layer, the second semiconductor layer, and the active layer.

14. The light emitting element of claim 13 , wherein the insulating layer exposes the first end and the second end of the emission stacked pattern.

15. The light emitting element of claim 1 , wherein the insulating layer includes at least one of SiO2, Si3N4, Al2O3, or TiO2.

16. A display device comprising the light emitting element of claim 1 .

17. The light emitting element of claim 1 , wherein

the second semiconductor layer comprises a first surface directly contacting the active layer and a second surface adjacent to the second end; and

the emission stacked pattern further comprises an electrode layer directly contacting the second semiconductor layer at the second surface of the second semiconductor layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2024
From: MOON, SU MI; KIM, EUN JU; CHO, HYUN MIN
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 067312/0653 →
Priority Claims (1)
KR 10-2018-0148788 · Nov 27, 2018 · national
Continuity (2)
Continuation 17297870
Related Publication 20240290914A1 · Aug 29, 2024
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