Reflective mask
View Patent ↗A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
1. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed over the reflective multilayer;
a photo catalytic layer disposed over the capping layer, the photo catalytic layer being capable of catalytically decomposing a hydrocarbon residue formed on the reflective mask upon exposure to extreme ultraviolet radiation; and
an absorber layer disposed over the photo catalytic layer, the absorber layer comprising an opening exposing a portion of the photo catalytic layer.
2. The reflective mask of claim 1 , wherein the photo catalytic layer includes one or more of titanium oxide, tin oxide, zinc oxide, and cadmium sulfide.
3. The reflective mask of claim 1 , wherein the photo catalytic layer has a thickness ranging from 2 nm to 10 nm.
4. The reflective mask of claim 1 , wherein the opening comprises a circuit pattern.
5. The reflective mask of claim 4 , further comprising a black border pattern formed around the circuit pattern.
6. The reflective mask of claim 5 , wherein the black border pattern extends through the absorber layer, the photo catalytic layer, the capping layer, and the reflective multilayer.
7. The reflective mask of claim 6 , wherein the substrate is exposed in a bottom of the black border pattern.
8. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed over the substrate;
a capping layer disposed over the reflective multilayer;
an absorber layer disposed over the capping layer; and
a cover layer disposed over the absorber layer,
wherein an uppermost layer of the reflective multilayer includes Mo and is in contact with the capping layer.
9. The reflective mask of claim 8 , wherein the capping layer is made of elemental ruthenium, a ruthenium alloy, or a ruthenium-based oxide.
10. The reflective mask of claim 9 , wherein the capping layer has a thickness ranging from 2 nm to 10 nm.
11. The reflective mask of claim 8 , further comprising an intermediate layer disposed between the capping layer and the absorber layer.
12. The reflective mask of claim 11 , wherein the intermediate layer includes one or more of titanium oxide, tin oxide, zinc oxide, and cadmium sulfide.
13. The reflective mask of claim 11 , further comprising a circuit pattern formed through the cover layer and the absorber layer and exposing the intermediate layer.
14. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a hydrogen diffusion barrier layer disposed on the reflective multilayer;
a capping layer disposed on the hydrogen diffusion barrier layer; and
an absorber layer disposed on the capping layer.
15. The reflective mask of claim 14 , wherein the hydrogen diffusion barrier layer includes a silicon compound.
16. The reflective mask of claim 14 , wherein the hydrogen diffusion barrier layer includes a metal oxide.
17. The reflective mask of claim 14 , wherein the hydrogen diffusion barrier layer includes an elemental metal.
18. The reflective mask of claim 14 , wherein a thickness of the hydrogen diffusion barrier layer ranges from 0.5 nm to 5 nm.
19. The reflective mask of claim 14 , further comprising an intermediate layer disposed between the absorber layer and the capping layer.
20. The reflective mask of claim 19 , wherein the intermediate layer includes a first material, the capping layer includes a second material, and the first material has a lower hydrogen diffusivity than the second material.