Memory controller for communicating memory status information, memory system including the memory controller, and operating method of the memory controller
An embodiment of the method includes transferring a first read command corresponding to a first cell region of the memory device through a first channel, receiving first data, read from the first cell region, from the memory device through a second channel physically separated from the first channel, transferring a status information request command through the first channel, the status information request command request the transfer of status information about a second cell region of the memory device, receiving the status information about the second cell region from the memory device through the first channel, and transferring a second read command corresponding to the second cell region of the memory device through the first channel, at least a portion of a period in which the status information is received through the first channel overlaps a period where the first data is received through the second channel.
1 . An operating method of a memory controller controlling a memory device, the operating method comprising:
transferring a first read command corresponding to a first cell region of the memory device through a first channel;
receiving first data, read from the first cell region, from the memory device through a second channel physically separated from the first channel;
transferring a first status information request command through the first channel, the first status information request command requesting a transfer of status information about a second cell region of the memory device;
receiving the status information about the second cell region from the memory device through the first channel; and
transferring a second read command corresponding to the second cell region of the memory device through the first channel,
wherein at least a portion of a period in which the status information is received through the first channel, overlaps a period where the first data is received through the second channel.
2 . The operating method of claim 1 , wherein
the second cell region corresponds to a page included in one block included in the memory device, and
the first status information request command includes address information representing a position of the second cell region.
3 . The operating method of claim 1 , wherein the status information is
generated by the memory controller,
stored in a memory cell array of the memory device,
read from the memory cell array in response to the status information request command, and
received through the first channel.
4 . The operating method of claim 1 , wherein at least a portion of a period in which the first status information request command is transferred through the first channel, overlaps the period where the first data is received through the second channel.
5 . The operating method of claim 1 , further comprising:
controlling a read level in a read operation on the second cell region based on a degradation status of each of memory cells of the second cell region, the degradation status determined based on the status information.
6 . The operating method of claim 1 , wherein
the status information includes information associated with a read level in a read operation previously performed on the second cell region of the memory device, and
the operating method further includes controlling the read level in the read operation on the second cell region to correspond to a read level included in the status information.
7 . The operating method of claim 1 , wherein
the second read command includes a command of a first type issuing a request to output hard decision (HD) data based on a normal read level, or the second read command includes a command of a second type issuing a request to output soft decision (SD) data based on at least one offset read level along with the HD data, and
based on the status information, when a degree of degradation of memory cells of the second cell region is greater than a certain threshold, the second read command includes the command of the second type.
8 . The operating method of claim 7 , further comprising:
receiving second data from the memory device through the second channel, the second data including the HD data and the SD data each read from the second cell region; and
performing SD error correction code (ECC) decoding processing using the HD data and the SD data on the second data, without HD ECC decoding processing using the HD data.
9 . The operating method of claim 1 , further comprising:
receiving second data from the memory device through the second channel, the second data read from the second cell region; and
performing a recovery operation for recovering an error when an uncorrectable error occurs in the second data,
wherein a plurality of recovery modules associated with error recovery are applied to the memory controller, and
a recovery module executed for recovering an error of the second data is differently selected based on the status information.
10 . The operating method of claim 1 , further comprising:
receiving second data from the memory device through the second channel, the second data read from the second cell region;
transferring a second status information request command through the first channel, the second status information request command requesting a transfer of status information about a third cell region of the memory device; and
receiving through the first channel, the status information about the third cell region from the memory device,
wherein at least a portion of a period in which the status information about the third cell region is received through the first channel, overlaps a period where the second data is received through the second channel.
11 . A memory controller communicating with a memory device, the memory controller comprising:
a processor configured to control a memory operation on the memory device;
a memory interface connected to the memory device through a first channel communicating a command/address and a second channel communicating data, the second channel is physically separated from the first channel;
an error correction code (ECC) circuit configured to perform ECC decoding processing on data read from the memory device to correct an error of the data read from the memory device; and
a status information processor configured to receive and process status information transferred from the memory device through the first channel, the status information representing a degradation status of memory cells of the memory device,
the memory controller is configured to receive status information about a first cell region through the first channel before a read operation on the first cell region of a memory cell array of the memory device is performed, and
the processor is configured to differently control a read level in the read operation on the first cell region according to a degradation status of memory cells of the first cell region, or differently perform an error correction or recovery operation on data read from the first cell region, based on the status information.
12 . The memory controller of claim 11 , wherein
the memory interface is configured to output a status information request command, and
the status information request command issues a request to transfer status information about the first cell region, through the first channel.
13 . The memory controller of claim 12 , wherein
the memory interface is configured to output through the first channel, a read command corresponding to a second cell region of the memory cell array before outputting the status information request command corresponding to the first cell region, and
at least a portion of a period in which the status information about the first cell region is received through the first channel, overlaps a period where data read from the second cell region is received through the second channel.
14 . The memory controller of claim 11 , wherein the memory cell array includes a plurality of blocks, and each of the plurality of blocks includes a plurality of pages,
the first cell region corresponds to one of the plurality of pages, and the status information is received by units of one or more pages each including the first cell region.
15 . The memory controller of claim 11 , wherein the status information includes at least one piece of information selected from among:
an on-chip valley search (OVS) counting value corresponding to a difference value between a number of on cells and a number of off cells determined based on at least two read levels,
a read level applied to at least one read operation previously performed on the memory device,
a write or erase counting value corresponding to the memory cell array, or
an error value occurring in the at least one read operation previously performed on the memory device.
16 . The memory controller of claim 15 , wherein the at least one piece of information of the status information is stored in the memory cell array, and the status information is read from the memory cell array and received through the first channel.
17 . The memory controller of claim 11 , wherein the memory interface is configured to output a read command issuing a request to output hard decision (HD) data based on a normal read level on the first cell region, or output a read command issuing a request to output soft decision (SD) data based on at least one offset read level along with the HD data on the first cell region, based on the status information.
18 . A memory system comprising:
a memory device including,
a memory cell array including a plurality of pages, each page including a plurality of memory cells;
a control logic configured to control a memory operation on the memory cell array and generate status information representing a degradation status of the plurality of memory cells; and
an interface circuit configured to communicate a command/address through a first channel and communicate data through a second channel physically separated from the first channel,
the interface circuit is configured to
sequentially receive from outside the memory device, a first read command corresponding to a first page and a second read command corresponding to a second page,
receive a status information request command issuing a request to transfer status information about the second page through the first channel before the second read command is received,
output the status information about the second page through the first channel, and
output through the second channel, data of the first page read in response to the first read command in parallel with outputting the status information about the second page.
19 . The memory system of claim 18 , further comprising:
a memory controller configured to communicate with the memory device through the first channel and the second channel and output the first read command, the second read command, and the status information request command,
wherein the memory controller is configured to differently control a read level in a read operation on the second page according to a degradation status of each of memory cells of the second page, or differently perform an error correction or recovery operation on data read from the second page, based on the status information about the second page.
20 . The memory system of claim 19 , wherein
the status information is stored in the memory cell array and includes information associated with a read level in a read operation previously performed on the plurality of pages, and
the memory device is configured to output status information to the memory controller in response to the status information request command from the memory controller, the status information associated with the read level in the read operation performed on the second page.