Granted Patent B2

US 12,500,332 · App. 18/734,703 · Granted Dec 16, 2025

Inventors: Jaume Anguera Pros (Vinaros, ES); Norman Toporcer (Castelldefels, ES); Aurora Andujar Linares (Barcelona, ES)

Assignee: IGNION, S.L.

H01Q1/243H01Q1/38H01Q5/335H01Q5/357H01Q5/50H01Q9/0485H01Q9/40H01Q21/30H01Q1/50

Abstract

Claims (38)

1 . A radiation booster bar comprising:

first and second substantially parallel conductive surfaces;

a dielectric material that supports the first and second conductive surfaces;

wherein the radiation booster bar has a slim width factor greater than 2, the slim width factor being a ratio between a length and a width of the radiation booster bar;

wherein the first and second conductive surfaces are connected at two opposite ends of a longest edge of the first or second conductive surface so that a first resonant frequency of the radiation booster bar is higher than a highest frequency of a first frequency region of operation of the radiation booster bar; and

wherein the radiation booster bar is not resonant within any frequency range of operation of the radiation booster bar.

2 . The radiation booster bar of claim 1 , wherein the dielectric material is air.

3 . The radiation booster bar of claim 1 , wherein the first and second conductive surfaces are connected by at least one via.

4 . The radiation booster bar of claim 3 , wherein the first and second conductive surfaces are connected at each end of an edge of the first conductive surface by two vias.

5 . The radiation booster bar of claim 3 , wherein the radiation booster bar comprises four vias, one at each corner of the first conductive surface, and wherein the radiation booster bar has a rectangular shape and the first and second conductive surfaces are substantially the same size.

6 . The radiation booster bar of claim 1 , wherein:

the radiation booster bar has a first resonance frequency greater than 3.0 times a reference frequency of 900 MHz, when connected to a test platform comprising a square conductive surface acting as ground plane and having sides measuring 60 centimeters, the radiation booster bar being mounted close to a central point of the first conductive surface and extending perpendicularly from the first conductive surface in a monopole configuration, and being electrically connected to a connector; and

a radiation efficiency measured for the radiation booster bar in the test platform at the reference frequency of 900 MHz is less than 10%.

7 . The radiation booster bar of claim 6 , wherein the radiation efficiency measured for the radiation booster bar in the test platform at the reference frequency of 900 MHz is less than 2.5%.

8 . A radiation booster bar comprising:

first and second substantially parallel conductive surfaces;

a dielectric material that supports the first and second conductive surfaces;

wherein the radiation booster bar has a slim width factor greater than 2, the slim width factor being a ratio between a length and a width of the radiation booster bar;

wherein the first and second conductive surfaces are connected substantially in the middle of two opposite edges of the first or second conductive surface such that a first resonant frequency of the radiation booster bar is higher than a highest frequency of a first frequency region of operation of the radiation booster; and

wherein the radiation booster bar is not resonant within any frequency range of operation of the radiation booster bar.

9 . The radiation booster bar of claim 8 , wherein the first and second conductive surfaces are connected substantially in the middle of the two opposite edges of the first or second conductive surface by at least one via.

10 . The radiation booster bar of claim 9 , wherein the first and second conductive surfaces are also connected at both ends of an edge of the first or second conductive surface.

11 . The radiation booster bar of claim 8 , further comprising two vias between the first and second conductive surfaces.

12 . The radiation booster bar of claim 11 , wherein the radiation booster bar comprises one via at each corner of the first conductive surface, and wherein the radiation booster bar has a rectangular shape and the first and second conductive surfaces are substantially the same size.

13 . The radiation booster bar of claim 8 , wherein the first and second conductive surfaces are also connected at both ends of an edge of the first or second conductive surface.

14 . The radiation booster bar of claim 13 , wherein the first and second conductive surfaces are connected at each end of an edge of the first conductive surface by at least one via.

15 . The radiation booster bar of claim 13 , further comprising first and second vias between the first and second conductive surfaces at two ends of an edge of the first conductive surface.

16 . The radiation booster bar of claim 8 , wherein:

the radiation booster bar has a first resonance frequency greater than 3.0 times a reference frequency of 900 MHZ, when connected to a test platform comprising a square conductive surface acting as ground plane and having sides measuring 60 centimeters, the radiation booster bar being mounted close to a central point of the first conductive surface and extending perpendicularly from the first conductive surface in a monopole configuration, and being electrically connected to a connector; and

a radiation efficiency measured for the radiation booster bar in the test platform at the reference frequency of 900 MHz is less than 10%.

17 . The radiation booster bar of claim 16 , wherein the radiation efficiency measured for the radiation booster bar in the test platform at the reference frequency of 900 MHz is less than 2.5%.

18 . A radiation booster bar comprising:

first and second substantially parallel conductive surfaces connected by at least one via;

a dielectric material that supports the first and second conductive surfaces;

wherein the radiation booster bar has a slim height factor greater than 3, the slim height factor being a ratio between a length and a height of the radiation booster bar;

wherein the radiation booster bar has a maximum size smaller than 1/15 of the free-space wavelength corresponding to a lowest frequency of a first frequency region of operation; and

wherein the radiation booster bar is not resonant within any frequency range of operation of the radiation booster bar.

19 . The radiation booster bar of claim 18 , wherein the radiation booster bar has a maximum size smaller than 1/25 of the free-space wavelength corresponding to the lowest frequency of the first frequency region of operation.

Priority Claims (4)

Continuity (10)

References Cited (187)