VARIABLE FAST LOOK NEIGHBOR AHEAD TO IMPROVE READ ACCURACY

1 . A memory apparatus, comprising:

memory cells each connected to one of a plurality of word lines and configured to retain a threshold voltage corresponding to one of a plurality of data states; and

a control means configured to:

determine ones of the plurality of data states for the memory cells of a neighboring word line of the plurality of word lines adjacent to a selected word line of the plurality of word lines in a pre-read,

determine an adjusted sense time according to a zone of a plurality of zones identified for the memory cells of the neighboring word line adjacent each of the memory cells of the selected word line and the one of the plurality of data states targeted for the memory cells of the selected word line and a temperature of the memory apparatus, and

perform a plurality of reads on the selected word line for each of a plurality of groupings of ones of the plurality of data states in a read operation using the adjusted sense time determined for each of the memory cells of the selected word line.

2 . The memory apparatus as set forth in claim 1 , wherein the plurality of word lines and a plurality of dielectric layers extend horizontally and overlay one another in an alternating fashion in a stack, memory holes extend vertically through the stack, the memory cells are connected in series between a drain-side select gate transistor on a drain-side of each of the memory holes and a source-side select gate transistor on a source-side of each of the memory holes, the drain-side select gate transistor of each of the memory holes is connected to one of a plurality of bit lines and the source-side select gate transistor of each of the memory holes is connected to a source line, the neighboring word line is immediately adjacent to and disposed vertically above the selected word line in the stack.

3 . The memory apparatus as set forth in claim 1 , wherein the plurality of zones includes a first zone corresponding with the memory cells of the neighboring word line having the threshold voltage associated with one group of the plurality of data states and a second zone corresponding with the memory cells of the neighboring word line having the threshold voltage associated with another group of the plurality of data states.

4 . The memory apparatus as set forth in claim 3 , wherein the memory apparatus further includes a temperature determination circuit configured to detect the temperature of the memory apparatus and the control means is further configured to:

determine the temperature of the memory apparatus using the temperature determination circuit;

calculate a first zone delta sense time as a first zone sense coefficient multiplied by a first zone sense temperature offset, the first zone sense temperature offset being equal to one plus a first zone temperature coefficient multiplied by a first temperature offset equal to the temperature of the memory apparatus minus eighty five, the first zone sense coefficient and the first zone temperature coefficient selected based on the one of the plurality of data states targeted for the memory cells of the selected word line;

calculate a second zone delta sense time as a second zone sense coefficient multiplied by a second zone sense temperature offset, the second zone sense temperature offset being equal to one plus a second zone temperature coefficient multiplied by a second temperature offset equal to the temperature of the memory apparatus minus eighty five, the second zone sense coefficient and the second zone temperature coefficient selected based on the one of the plurality of data states targeted for the memory cells of the selected word line;

determine the adjusted sense time for each one of the memory cells of the selected word line using the first zone delta sense time in response to one of the memory cells of the neighboring word line adjacent to the one of the memory cells of the selected word line having the threshold voltage associated with of the plurality of data states; and

determine the adjusted sense time for each one of the memory cells of the selected word line using the second zone delta sense time in response to the one of the memory cells of the neighboring word line adjacent to the one of the memory cells of the selected word line having the threshold voltage associated with the another group of the plurality of data states.

5 . The memory apparatus as set forth in claim 4 , wherein data stored in the memory cells is stored as a plurality of lower bits of a lower page and a plurality of middle bits of a middle page and a plurality of upper bits of an upper page encoded with a code scheme, the plurality of data states includes, in order of the threshold voltage increasing in magnitude, an erased state and a first data state and a second data state and a third data state and a fourth data state and a fifth data state and a sixth data state and a seventh data state, the plurality of groupings of ones of the plurality of data states includes the lower page corresponding with the first data state and the fifth data state and the middle page corresponding with the second data state and the fourth data state and the sixth data state and the upper page corresponding with the third data state and the seventh data state, the first zone corresponds with the memory cells of the neighboring word line having the threshold voltage associated with the erased state and the first data state and the second data state and the third data state and the fourth data state, and the second zone corresponds with the memory cells of the neighboring word line having the threshold voltage associated with the fifth data state and the sixth data state and the seventh data state.

6 . The memory apparatus as set forth in claim 5 , further including a coefficient look up table including values of the first zone sense coefficient and the first zone temperature coefficient and the second zone sense coefficient and the second zone temperature coefficient for each one of the plurality of data states possible for the memory cells of the selected word line and the control means is configured to:

select the first zone sense coefficient and the first zone temperature coefficient from the coefficient look up table based on the one of the plurality of data states targeted for the memory cells of the selected word line and calculate the first zone delta sense time accordingly; and

select the second zone sense coefficient and the second zone temperature coefficient from the coefficient look up table based on the one of the plurality of data states targeted for the memory cells of the selected word line and calculate the second zone delta sense time accordingly.

7 . The memory apparatus as set forth in claim 3 , wherein the control means is further configured to apply a single read voltage corresponding to one of the plurality of data states to the selected word line while the memory cells associated with the first zone and the memory cells associated with the second zone are read in turn using the adjusted sense time during the plurality of reads.

8 . A controller in communication with a memory apparatus including memory cells each connected to one of a plurality of word lines and configured to retain a threshold voltage corresponding to one of a plurality of data states, the controller configured to:

instruct the memory apparatus to determine ones of the plurality of data states for the memory cells of a neighboring word line of the plurality of word lines adjacent to a selected word line of the plurality of word lines in a pre-read;

instruct the memory apparatus to determine an adjusted sense time according to a zone of a plurality of zones identified for the memory cells of the neighboring word line adjacent each of the memory cells of the selected word line and the one of the plurality of data states targeted for the memory cells of the selected word line and a temperature of the memory apparatus; and

instruct the memory apparatus to perform a plurality of reads on the selected word line for each of a plurality of groupings of ones of the plurality of data states in a read operation using the adjusted sense time determined for each of the memory cells of the selected word line.

9 . The controller as set forth in claim 8 , wherein the plurality of word lines and a plurality of dielectric layers extend horizontally and overlay one another in an alternating fashion in a stack, memory holes extend vertically through the stack, the memory cells are connected in series between a drain-side select gate transistor on a drain-side of each of the memory holes and a source-side select gate transistor on a source-side of each of the memory holes, the drain-side select gate transistor of each of the memory holes is connected to one of a plurality of bit lines and the source-side select gate transistor of each of the memory holes is connected to a source line, the neighboring word line is immediately adjacent to and disposed vertically above the selected word line in the stack.

10 . The controller as set forth in claim 8 , wherein the plurality of zones includes a first zone corresponding with the memory cells of the neighboring word line having the threshold voltage associated with one group of the plurality of data states and a second zone corresponding with the memory cells of the neighboring word line having the threshold voltage associated with another group of the plurality of data states.

11 . The controller as set forth in claim 10 , wherein the memory apparatus further includes a temperature determination circuit configured to detect the temperature of the memory apparatus and the controller is further configured to:

instruct the memory apparatus to determine the temperature of the memory apparatus using the temperature determination circuit;

calculate a first zone delta sense time as a first zone sense coefficient multiplied by a first zone sense temperature offset, the first zone sense temperature offset being equal to one plus a first zone temperature coefficient multiplied by a first temperature offset equal to the temperature of the memory apparatus minus eighty five, the first zone sense coefficient and the first zone temperature coefficient selected based on the one of the plurality of data states targeted for the memory cells of the selected word line;

calculate a second zone delta sense time as a second zone sense coefficient multiplied by a second zone sense temperature offset, the second zone sense temperature offset being equal to one plus a second zone temperature coefficient multiplied by a second temperature offset equal to the temperature of the memory apparatus minus eighty five, the second zone sense coefficient and the second zone temperature coefficient selected based on the one of the plurality of data states targeted for the memory cells of the selected word line;

determine the adjusted sense time for each one of the memory cells of the selected word line using the first zone delta sense time in response to one of the memory cells of the neighboring word line adjacent to the one of the memory cells of the selected word line having the threshold voltage associated with the one group of the plurality of data states; and

determine the adjusted sense time for each one of the memory cells of the selected word line using the second zone delta sense time in response to the one of the memory cells of the neighboring word line adjacent to the one of the memory cells of the selected word line having the threshold voltage associated with the another group of the plurality of data states.

12 . The controller as set forth in claim 11 , wherein data stored in the memory cells is stored as a plurality of lower bits of a lower page and a plurality of middle bits of a middle page and a plurality of upper bits of an upper page encoded with a code scheme, the plurality of data states includes, in order of the threshold voltage increasing in magnitude, an erased state and a first data state and a second data state and a third data state and a fourth data state and a fifth data state and a sixth data state and a seventh data state, the plurality of groupings of ones of the plurality of data states includes the lower page corresponding with the first data state and the fifth data state and the middle page corresponding with the second data state and the fourth data state and the sixth data state and the upper page corresponding with the third data state and the seventh data state, the first zone corresponds with the memory cells of the neighboring word line having the threshold voltage associated with the erased state and the first data state and the second data state and the third data state and the fourth data state, and the second zone corresponds with the memory cells of the neighboring word line having the threshold voltage associated with the fifth data state and the sixth data state and the seventh data state.

13 . The controller as set forth in claim 12 , wherein the memory apparatus further includes a coefficient look up table including values of the first zone sense coefficient and the first zone temperature coefficient and the second zone sense coefficient and the second zone temperature coefficient for each one of the plurality of data states possible for the memory cells of the selected word line and the controller is configured to:

select the first zone sense coefficient and the first zone temperature coefficient from the coefficient look up table based on the one of the plurality of data states targeted for the memory cells of the selected word line and calculate the first zone delta sense time accordingly; and

select the second zone sense coefficient and the second zone temperature coefficient from the coefficient look up table based on the one of the plurality of data states targeted for the memory cells of the selected word line and calculate the second zone delta sense time accordingly.

14 . A method of operating a memory apparatus including memory cells each connected to one of a plurality of word lines and configured to retain a threshold voltage corresponding to one of a plurality of data states, the method comprising the steps of:

determining ones of the plurality of data states for the memory cells of a neighboring word line of the plurality of word lines adjacent to a selected word line of the plurality of word lines in a pre-read;

determining an adjusted sense time according to a zone of a plurality of zones identified for the memory cells of the neighboring word line adjacent each of the memory cells of the selected word line and the one of the plurality of data states targeted for the memory cells of the selected word line and a temperature of the memory apparatus; and

performing a plurality of reads on the selected word line for each of a plurality of groupings of ones of the plurality of data states in a read operation using the adjusted sense time determined for each of the memory cells of the selected word line.

15 . The method as set forth in claim 14 , wherein the plurality of word lines and a plurality of dielectric layers extend horizontally and overlay one another in an alternating fashion in a stack, memory holes extend vertically through the stack, the memory cells are connected in series between a drain-side select gate transistor on a drain-side of each of the memory holes and a source-side select gate transistor on a source-side of each of the memory holes, the drain-side select gate transistor of each of the memory holes is connected to one of a plurality of bit lines and the source-side select gate transistor of each of the memory holes is connected to a source line, the neighboring word line is immediately adjacent to and disposed vertically above the selected word line in the stack.

16 . The method as set forth in claim 14 , wherein the plurality of zones includes a first zone corresponding with the memory cells of the neighboring word line having the threshold voltage associated with one group of the plurality of data states and a second zone corresponding with the memory cells of the neighboring word line having the threshold voltage associated with another group of the plurality of data states.

17 . The method as set forth in claim 16 , wherein the memory apparatus further includes a temperature determination circuit configured to detect the temperature of the memory apparatus and the method further includes the steps of:

determining the temperature of the memory apparatus using the temperature determination circuit;

calculating a first zone delta sense time as a first zone sense coefficient multiplied by a first zone sense temperature offset, the first zone sense temperature offset being equal to one plus a first zone temperature coefficient multiplied by a first temperature offset equal to the temperature of the memory apparatus minus eighty five, the first zone sense coefficient and the first zone temperature coefficient selected based on the one of the plurality of data states targeted for the memory cells of the selected word line;

calculating a second zone delta sense time as a second zone sense coefficient multiplied by a second zone sense temperature offset, the second zone sense temperature offset being equal to one plus a second zone temperature coefficient multiplied by a second temperature offset equal to the temperature of the memory apparatus minus eighty five, the second zone sense coefficient and the second zone temperature coefficient selected based on the one of the plurality of data states targeted for the memory cells of the selected word line;

determining the adjusted sense time for each one of the memory cells of the selected word line using the first zone delta sense time in response to one of the memory cells of the neighboring word line adjacent to the one of the memory cells of the selected word line having the threshold voltage associated with the one group of the plurality of data states; and

determining the adjusted sense time for each one of the memory cells of the selected word line using the second zone delta sense time in response to the one of the memory cells of the neighboring word line adjacent to the one of the memory cells of the selected word line having the threshold voltage associated with the another group of the plurality of data states.

18 . The method as set forth in claim 17 , wherein data stored in the memory cells is stored as a plurality of lower bits of a lower page and a plurality of middle bits of a middle page and a plurality of upper bits of an upper page encoded with a code scheme, the plurality of data states includes, in order of the threshold voltage increasing in magnitude, an erased state and a first data state and a second data state and a third data state and a fourth data state and a fifth data state and a sixth data state and a seventh data state, the plurality of groupings of ones of the plurality of data states includes the lower page corresponding with the first data state and the fifth data state and the middle page corresponding with the second data state and the fourth data state and the sixth data state and the upper page corresponding with the third data state and the seventh data state, the first zone corresponds with the memory cells of the neighboring word line having the threshold voltage associated with the erased state and the first data state and the second data state and the third data state and the fourth data state, and the second zone corresponds with the memory cells of the neighboring word line having the threshold voltage associated with the fifth data state and the sixth data state and the seventh data state.

19 . The method as set forth in claim 18 , wherein the memory apparatus further includes a coefficient look up table including values of the first zone sense coefficient and the first zone temperature coefficient and the second zone sense coefficient and the second zone temperature coefficient for each one of the plurality of data states possible for the memory cells of the selected word line and the method further includes the steps of:

selecting the first zone sense coefficient and the first zone temperature coefficient from the coefficient look up table based on the one of the plurality of data states targeted for the memory cells of the selected word line and calculate the first zone delta sense time accordingly; and

selecting the second zone sense coefficient and the second zone temperature coefficient from the coefficient look up table based on the one of the plurality of data states targeted for the memory cells of the selected word line and calculate the second zone delta sense time accordingly.

20 . The method as set forth in claim 16 , further including the step of applying a single read voltage corresponding to one of the plurality of data states to the selected word line while the memory cells associated with the first zone and the memory cells associated with the second zone are read in turn using the adjusted sense time during the plurality of reads.