Electronic device manufacturing method, laser device, and wavelength sequence calculation system
An electronic device manufacturing method includes acquiring a pulse spectral shape of pulse laser light, and a target integrated spectral shape realized by the pulse laser light of pulses generated based on wavelength sequence in which a center wavelength of the pulse laser light periodically changes; calculating target center wavelengths allocated to the pulses to realize the target integrated spectral shape, and a number of allocation pulses of each target center wavelength being the number of allocation pulses per cycle of the wavelength sequence; calculating the wavelength sequence by correspondingly allocating at least one first center wavelength having the number of allocation pulses of 2 or greater so that the smaller the number of allocation pulses is, the larger a time interval of the allocation pulses for the first center wavelength is, and then correspondingly allocating at least one second center wavelength having the number of allocation pulses of 1.
1 . An electronic device manufacturing method, comprising:
acquiring a pulse spectral shape of pulse laser light, and a target integrated spectral shape to be realized by the pulse laser light of a plurality of pulses generated based on a wavelength sequence in which a center wavelength of the pulse laser light is periodically changed;
calculating a plurality of target center wavelengths allocated to the plurality of pulses to realize the target integrated spectral shape, and a number of allocation pulses of each target center wavelength being the number of allocation pulses per cycle of the wavelength sequence, the target center wavelengths including at least one first center wavelength, the number of allocation pulses of which is 2 or greater, and at least one second center wavelength, the number of allocation pulses of which is 1;
calculating the wavelength sequence by allocating the at least one first center wavelength, and then allocating the at least one second center wavelength;
generating the pulse laser light based on the wavelength sequence by a laser device;
outputting the pulse laser light to an exposure apparatus; and
exposing a photosensitive substrate to the pulse laser light in the exposure apparatus to manufacture an electronic device,
wherein the target center wavelengths are calculated based on an inverse Fourier transform of a third function obtained by dividing a Fourier transform of a second function representing the target integrated spectral shape by a Fourier transform of a first function representing the pulse spectral shape.
2 . The electronic device manufacturing method according to claim 1 ,
wherein the number of allocation pulses is calculated based on the inverse Fourier transform.
3 . The electronic device manufacturing method according to claim 1 ,
wherein center wavelengths corresponding to values equal to or greater than 1 among values of a fourth function obtained by dividing the inverse Fourier transform by a minimum value that is equal to or greater than a first threshold among a plurality of values included in the inverse Fourier transform are calculated as the target center wavelengths.
4 . The electronic device manufacturing method according to claim 1 ,
wherein values of a fourth function obtained by dividing the inverse Fourier transform by a minimum value that is equal to or greater than a first threshold among a plurality of values included in the inverse Fourier transform are converted into integers, and the center wavelengths corresponding to values equal to or greater than 1 among the values converted into integers are calculated as the target center wavelengths, and
the values converted into integers are calculated as the numbers of allocation pulses of the corresponding target center wavelengths.
5 . The electronic device manufacturing method according to claim 4 ,
wherein the values of the fourth function are converted into integers by converting a value less than 1 to 0 and rounding off a value equal to or greater than 1 among the values of the fourth function.
6 . The electronic device manufacturing method according to claim 1 ,
wherein the center wavelengths corresponding to values equal to or greater than 1 among values of a sixth function obtained by dividing a fifth function, which is a function obtained by normalizing the inverse Fourier transform so that a maximum value is 1, by a minimum value that is equal to or greater than a second threshold among a plurality of values included in the fifth function are calculated as the target center wavelengths.
7 . The electronic device manufacturing method according to claim 1 ,
wherein values of a sixth function obtained by dividing a fifth function, which is a function obtained by normalizing the inverse Fourier transform so that a maximum value is 1, by a minimum value that is equal to or greater than a second threshold among a plurality of values included in the fifth function are converted into integers, and center wavelengths corresponding to values equal to or greater than 1 among the values converted into integers are calculated as the target center wavelengths, and
the values converted into integers are calculated as the numbers of allocation pulses of the corresponding target center wavelengths.
8 . The electronic device manufacturing method according to claim 7 ,
wherein the values of the sixth function are converted into integers by converting a value less than 1 to 0 and rounding off a value equal to or greater than 1 among the values of the sixth function.
9 . The electronic device manufacturing method according to claim 1 ,
wherein the at least one first center wavelength includes a plurality of first center wavelengths, the numbers of allocation pulses of which are different from each other, and
the respective first center wavelengths are allocated in descending order of the numbers of allocation pulses.
10 . The electronic device manufacturing method according to claim 1 ,
wherein the at least one first center wavelength is allocated so that a minimum value of the time interval is maximized.
11 . The electronic device manufacturing method according to claim 1 ,
wherein the pulse laser light is generated by the laser device including a semiconductor laser element and a wavelength adjuster configured to change the center wavelength of the pulse laser light by controlling a current flowing through the semiconductor laser element.
12 . The electronic device manufacturing method according to claim 1 ,
wherein the pulse spectral shape is acquired by a spectrum detector located on an optical path of the pulse laser light.
13 . The electronic device manufacturing method according to claim 1 ,
wherein the pulse spectral shape is acquired by reading a reference spectral shape which is a reference for the pulse spectral shape and a target spectral line width from a storage medium and deforming the reference spectral shape based on the target spectral line width.
14 . The electronic device manufacturing method according to claim 1 ,
wherein the pulse spectral shape is acquired by reading, from a storage medium, a spectral shape of pulse laser light output not from the laser device but from another laser device.
15 . The electronic device manufacturing method according to claim 1 ,
wherein the exposure apparatus calculates the wavelength sequence and transmits the target center wavelengths to the laser device based on the wavelength sequence.
16 . The electronic device manufacturing method according to claim 1 ,
wherein the exposure apparatus calculates and transmits the wavelength sequence to the laser device, and
the laser device sets the target center wavelengths based on the wavelength sequence.
17 . The electronic device manufacturing method according to claim 1 ,
wherein the exposure apparatus transmits the target integrated spectral shape to the laser device, and
the laser device calculates the wavelength sequence and sets the target center wavelengths based on the wavelength sequence.
18 . A laser device comprising:
a laser oscillator capable of changing a center wavelength of pulse laser light;
a laser amplifier capable of amplifying a pulse energy of the pulse laser light output from the laser oscillator and outputting the pulse laser light; and
a processor configured to:
acquire a pulse spectral shape of the pulse laser light, and a target integrated spectral shape to be realized by the pulse laser light of a plurality of pulses generated based on a wavelength sequence in which a center wavelength of the pulse laser light is periodically changed;
calculate a plurality of target center wavelengths allocated to the plurality of pulses to realize the target integrated spectral shape, and a number of allocation pulses of each target center wavelength being the number of allocation pulses per cycle of the wavelength sequence, the target center wavelengths including at least one first center wavelength, the number of allocation pulses of which is 2 or greater, and at least one second center wavelength, the number of allocation pulses of which is 1;
calculate the wavelength sequence by allocating the at least one first center wavelength, and then allocating the at least one second center wavelength; and
control the laser oscillator based on the wavelength sequence,
wherein the target center wavelengths are calculated based on an inverse Fourier transform of a third function obtained by dividing a Fourier transform of a second function representing the target integrated spectral shape by a Fourier transform of a first function representing the pulse spectral shape.
19 . A wavelength sequence calculation system comprising:
a non-transitory storage medium readable by a computer which stores a wavelength sequence calculation program; and
a CPU,
the CPU being configured to execute the wavelength sequence calculation program to:
acquire a pulse spectral shape of pulse laser light, and a target integrated spectral shape to be realized by the pulse laser light of a plurality of pulses generated based on a wavelength sequence in which a center wavelength of the pulse laser light is periodically changed;
calculate a plurality of target center wavelengths allocated to the plurality of pulses to realize the target integrated spectral shape, and a number of allocation pulses of each target center wavelength being the number of allocation pulses per cycle of the wavelength sequence, the target center wavelengths including at least one first center wavelength, the number of allocation pulses of which is 2 or greater, and at least one second center wavelength, the number of allocation pulses of which is 1; and
calculate the wavelength sequence by allocating the at least one first center wavelength, and then allocating the at least one second center wavelength,
wherein the target center wavelengths are calculated based on an inverse Fourier transform of a third function obtained by dividing a Fourier transform of a second function representing the target integrated spectral shape by a Fourier transform of a first function representing the pulse spectral shape.
20 . The electronic device manufacturing method according to claim 1 ,
wherein the at least one first center wavelength includes a plurality of first center wavelengths including
a first wavelength, the number of allocation pulses of which is a first number that is 2 or greater, and
a second wavelength, the number of allocation pulses of which is a second number that is greater than the first number, and
the respective first center wavelengths are allocated so that a time interval of the allocation pulses for the first wavelength is larger than a time interval of the allocation pulses for the second wavelength.