Display device
A semiconductor substrate includes: a substrate; a first conductive line extending along a first direction; a semiconductor layer, wherein the first conductive line includes a first part overlapping with the semiconductor layer and a second part not overlapping with the semiconductor layer, the first part of the first conductive line has a first width along a second direction different from the first direction, the second part of conductive line has a second width along the second direction, and the first width is greater than the second width; and an electrode disposed on the semiconductor layer and including an arc edge outside the first conductive line, wherein the semiconductor layer includes a first part extending along the second direction and overlapping with the arc edge and a second part connecting the first part and overlapping with a side of the first part of the first conductive line.
1. A semiconductor substrate, comprising:
a substrate;
a first conductive line disposed on the substrate and extending along a first direction;
a semiconductor layer disposed on the substrate, wherein the first conductive line comprises a first part overlapping with the semiconductor layer and a second part connected to the first part and not overlapping with the semiconductor layer, the first part of the first conductive line has a first width along a second direction different from the first direction, the second part of the first conductive line has a second width along the second direction, and the first width is greater than the second width; and
an electrode disposed on the semiconductor layer and comprising an arc edge outside the first conductive line,
wherein the semiconductor layer comprises a first part extending along the second direction and overlapping with the arc edge and a second part connected to the first part of the semiconductor layer and overlapping with a side of the first part of the first conductive line.
2. The semiconductor substrate of claim 1 , wherein the semiconductor layer further comprises a third part connecting to the second part of the semiconductor layer and extending along the second direction.
3. The semiconductor substrate of claim 2 , further comprising another electrode overlapping with the third part of the semiconductor layer.
4. The semiconductor substrate of claim 1 , further comprising a conductive layer disposed on the electrode.
5. The semiconductor substrate of claim 4 , wherein the conductive layer overlaps with the arc edge.
6. The semiconductor substrate of claim 4 , wherein the conductive layer comprises plural slits.
7. The semiconductor substrate of claim 1 , further comprising a second conductive line, wherein the semiconductor layer overlaps the second conductive line.
8. The semiconductor substrate of claim 1 , wherein the second direction is perpendicular to the first direction.
9. The semiconductor substrate of claim 1 , wherein at least a portion of the electrode and the first conductive line are overlapped.