Single substrate multiplexer
At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.
1 . An apparatus, comprising:
a layer stack comprising:
a carrier substrate;
a piezoelectric layer disposed above the carrier substrate;
at least one dielectric layer arranged between the piezoelectric layer and the carrier substrate;
a trap-rich layer arranged between the carrier substrate and the piezoelectric layer, wherein the trap-rich layer comprises polycrystalline silicon; and
a metallization disposed on or above the piezoelectric layer, comprising:
an antenna terminal; and
electrode structures forming at least three surface acoustic wave (SAW) filter circuits connected in parallel between the antenna terminal and a respective signal pad, wherein each SAW filter circuit of the at least three SAW filter circuits comprises a corresponding series signal line and a corresponding plurality of SAW resonators connected in series with or parallel to the corresponding series signal line; and
a package providing a cavity on top of the layer stack formed between the piezoelectric layer and at least one of a lid or a cover, wherein the electrode structures forming the at least three SAW filter circuits are enclosed in the cavity.
2 . The apparatus of claim 1 , wherein the carrier substrate comprises silicon (Si).
3 . The apparatus of claim 1 , wherein the at least one dielectric layer is a silicon oxide layer.
4 . The apparatus of claim 1 , wherein the polycrystalline silicon comprises a thickness between 300 nanometers (nm) to 2000 nm.
5 . The apparatus of claim 1 , wherein the carrier substrate has a thermal conductivity that is at least ten times larger than a thermal conductivity of the piezoelectric layer.
6 . The apparatus of claim 1 , further comprising a multilayer board forming at least a portion of the package, a bottom surface of the multilayer board comprising contact pads, wherein the multilayer board comprises an integrated wiring connecting the contact pads with respective external contacts on a top surface opposite to the bottom surface, and wherein the multilayer board is mounted to the layer stack with connections to electrically connect the contact pads with respective signal pads and the antenna terminal.
7 . The apparatus of claim 6 , wherein the multilayer board is selected from a group consisting of multilayer laminate, HTCC, and LTCC.
8 . The apparatus of claim 1 , wherein the at least three SAW filter circuits are enclosed in the cavity, and wherein the cavity is integrally formed.
9 . The apparatus of claim 1 , wherein the at least three SAW filter circuits comprise four SAW filter circuits (FC) that form a quadplexer comprising two duplexers.
10 . The apparatus of claim 1 , wherein at least one of the at least three SAW filter circuits is a receive (Rx) filter having a DMS filter in the corresponding series signal line.
11 . An apparatus, comprising:
a multiplexer comprising at least three surface acoustic wave (SAW) filter circuits each coupled to a common antenna terminal and formed together on a single chip, the single chip comprising:
a carrier substrate;
a piezoelectric layer disposed above the carrier substrate;
at least one dielectric layer arranged between the piezoelectric layer and the carrier substrate;
a trap-rich layer arranged between the carrier substrate and the piezoelectric layer, wherein the trap-rich layer comprises polycrystalline silicon; and
a metallization disposed on or above the piezoelectric layer, comprising:
the common antenna terminal; and
electrode structures forming the at least three SAW filter circuits, wherein each of the at least three SAW filter circuits is formed from a corresponding plurality of SAW resonators.
12 . The apparatus of claim 11 , wherein two of the at least three SAW filter circuits are configured to form a duplexer.
13 . The apparatus of claim 11 , wherein two of the at least three SAW filter circuits are configured to form a duplexer with a first SAW filter circuit of the at least three SAW filter circuits configured for a receive frequency of a band and a second SAW filter circuit of the at least three SAW filter circuits configured for a transmit frequency of the band.
14 . The apparatus of claim 11 , wherein the at least three SAW filter circuits comprise four SAW filter circuits configured to form a quadplexer.
15 . The apparatus of claim 14 , wherein the quadplexer includes a first duplexer associated with a first band and a second duplexer associated with a second band.
16 . The apparatus of claim 11 , wherein the at least three SAW filter circuits are enclosed in a cavity integrally formed as a thin film acoustic package.
17 . The apparatus of claim 11 , wherein the multiplexer further comprises a package providing a cavity enclosing the at least three SAW filter circuits and formed between the piezoelectric layer and a lid or a cover.