Display device and semiconductor device
A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor is covered by a first insulating film, a first drain electrode is connected to the oxide semiconductor via a first through hole formed in the first insulating film, a first source electrode is connected to the oxide semiconductor via second through hole formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode and the first source electrode, a drain wiring connects to the first drain electrode via a third through hole formed in the second insulating film, a source wiring is connected to the first source electrode via a fourth through hole formed in the second insulating film.
1 . A semiconductor device including a substrate having a first thin film transistor and a second thin film transistor, wherein
the first thin film transistor has a first semiconductor layer which is oxide semiconductor, a first gate electrode layer, a first gate insulating film arranged between the first semiconductor layer and the first gate electrode layer, a first drain electrode layer and a first source electrode layer,
a passivation film is formed covering the first gate electrode layer,
the second thin film transistor has a second semiconductor layer which is a polysilicon semiconductor, a second gate electrode layer, a second gate insulating film arranged between the second semiconductor layer and the second gate electrode layer, a second drain electrode layer and a second source electrode layer,
an interlayer insulating film is arranged between the first semiconductor layer and the second semiconductor layer,
the first semiconductor layer is disposed in an upper layer than the second semiconductor layer,
the first drain electrode layer is connected to the first semiconductor layer via a first through hole formed in the first gate insulating film,
the first source electrode layer is connected to the first semiconductor layer via a second through hole formed in the first gate insulating film,
a gate wiring is extended in a first direction, a signal wiring is extend in a second direction crossing the first direction,
the first semiconductor layer is arranged to intersect the gate wiring, in a plan view,
the signal wiring is formed on the passivation film and connects to the first drain electrode layer via a third through hole formed in the passivation film,
a first metal film is arranged below the first semiconductor layer and overlaps the first semiconductor layer in plan view,
a second metal film is arranged below the second semiconductor layer and overlaps the second semiconductor layer in plan view.
2 . The semiconductor device according to claim 1 , wherein
an aluminum oxide film is arranged between the first gate insulating film and the first gate electrode layer.
3 . The semiconductor device according to claim 1 , wherein
the second drain electrode and the second source electrode are formed on the passivation film,
a fifth through hole is formed through the first gate insulating film, the interlayer insulating film, the second gate insulating film and the passivation film, the second drain electrode is connected to the second semiconductor layer via a fifth through hole,
a sixth through hole is formed through the first gate insulating film, the interlayer insulating film, the second gate insulating film and the passivation film, the second source electrode is connected to the second semiconductor layer via a sixth through hole.
4 . The semiconductor device according to claim 1 , wherein
the first through hole and the third through hole are set in different places and overlap the drain wiring in a plan view.
5 . The semiconductor device according to claim 1 , wherein
a source wiring connects to the first source electrode via a fourth through hole formed in the passivation film, and
the source wiring connects with a pixel electrode.