Low dropout regulators
Provided are a low dropout (LDO) regulator controlling operation biasing of a transistor connected to an output node to have a wide bandwidth and provide a stable voltage at a fast speed, and a memory device including the LDO regulator. The LDO regulator includes a first low voltage transistor in which a first terminal thereof is connected to an output node configured to provide an output voltage to a load and a second terminal thereof is connected to a first node, an operational amplifier configured to compare a reference voltage with the output voltage and output the comparison result to a gate terminal of a first low voltage transistor, and an operation biasing control circuit connected to the output node and the first node, and including at least one high voltage transistor.
1 . A low dropout (LDO) regulator comprising:
a first low voltage transistor comprising:
a first terminal connected to an output node, the output node being configured to provide an output voltage to a load, and
a second terminal connected to a first node;
an operational amplifier configured to (i) compare a reference voltage with the output voltage to obtain a comparison result, and (ii) output the comparison result to a gate terminal of the first low voltage transistor; and
an operation biasing control circuit connected to the output node and the first node and including at least one high voltage transistor,
wherein the operation biasing control circuit is configured to control a bias on the first low voltage transistor based on a pre-defined voltage.
2 . The LDO regulator of claim 1 , wherein the operation biasing control circuit is configured to receive a high power voltage from a high power voltage terminal, and
wherein the first low voltage transistor is configured to output the output voltage based on the high power voltage.
3 . The LDO regulator of claim 2 , wherein the at least one high voltage transistor comprises:
a first high voltage transistor comprising a first terminal connected to the high power voltage terminal and a second terminal connected to the output node; and
a second high voltage transistor comprising a first terminal connected to a gate terminal of the first high voltage transistor and a second terminal connected to the first node.
4 . The LDO regulator of claim 3 , wherein:
the second high voltage transistor has a first channel type,
the first high voltage transistor has a second channel type that is different from the first channel type, and
the first low voltage transistor has the second channel type.
5 . The LDO regulator of claim 3 , wherein:
the gate terminal of the second high voltage transistor is configured to receive the pre-defined voltage, and
the pre-defined voltage results in the output voltage being compatible with the load.
6 . The LDO regulator of claim 3 , further comprising:
a first switch configured to selectively connect the high power voltage terminal to the gate terminal of the first high voltage transistor; and
a second switch configured to selectively connect the gate terminal of the second high voltage transistor to ground.
7 . The LDO regulator of claim 1 , wherein the at least one high voltage transistor comprises:
a first high voltage transistor comprising a first terminal connected to a high power voltage terminal and a second terminal connected to the output node;
a second high voltage transistor comprising a first terminal connected to a gate terminal of the first high voltage transistor and a second terminal connected to the first node; and
a third high voltage transistor comprising a first terminal connected to the high power voltage terminal, a second terminal connected to the second terminal of the second high voltage transistor, and a gate terminal connected to the gate terminal of the first high voltage transistor.
8 . The LDO regulator of claim 7 , wherein:
the second high voltage transistor has a first channel type,
the first low voltage transistor has a second channel type that is different from the first channel type, and
the first high voltage transistor and the third high voltage transistor have the second channel type.
9 . The LDO regulator of claim 7 , further comprising:
a fourth high voltage transistor comprising a first terminal connected to the high power voltage terminal and a gate terminal connected to the second terminal of the third high voltage transistor;
a fifth high voltage transistor comprising a first terminal connected to a second terminal of the fourth high voltage transistor;
a second low voltage transistor comprising a first terminal connected to the first node and a second terminal connected to ground; and
a third low voltage transistor comprising a first terminal connected to a second terminal of the fifth high voltage transistor, a second terminal connected to ground, and a gate terminal connected to a gate terminal of the second low voltage transistor.
10 . The LDO regulator of claim 1 , wherein the operation biasing control circuit is configured to maintain a voltage between the gate terminal of the first low voltage transistor and the second terminal of the first low voltage transistor at a constant level.
11 . The LDO regulator of claim 1 , wherein the operation biasing control circuit is configured to maintain a voltage of the first node less than a threshold voltage.
12 . A low dropout (LDO) regulator comprising:
a first low voltage transistor comprising:
a first terminal connected to an output node, the output node being configured to provide an output voltage to a load, and
a second terminal connected to a first node;
an operational amplifier configured to (i) compare a reference voltage with the output voltage to obtain a comparison result, and (ii) output the comparison result to a gate terminal of the first low voltage transistor;
a first high voltage transistor comprising a first terminal connected to a high power voltage terminal and a second terminal connected to the output node; and
a second high voltage transistor comprising a first terminal connected to a gate terminal of the first high voltage transistor and a second terminal connected to the first node,
wherein the second high voltage transistor has a different channel type than the first high voltage transistor and the first low voltage transistor.
13 . The LDO regulator of claim 12 , further comprising:
a first switch configured to selectively connect the high power voltage terminal to the gate terminal of the first high voltage transistor; and
a second switch configured to selectively connect the gate terminal of the second high voltage transistor to ground.
14 . The LDO regulator of claim 12 , further comprising:
a third high voltage transistor comprising a first terminal connected to the high power voltage terminal, a second terminal connected to the second terminal of the second high voltage transistor, and a gate terminal connected to the gate terminal of the first high voltage transistor.
15 . The LDO regulator of claim 14 , wherein the third high voltage transistor has a different channel type than the second high voltage transistor.
16 . The LDO regulator of claim 14 , further comprising:
a second low voltage transistor comprising a first terminal connected to the first node and a second terminal connected to ground;
a fourth high voltage transistor comprising a first terminal connected to the high power voltage terminal and a gate terminal connected to the second terminal of the third high voltage transistor;
a fifth high voltage transistor comprising a first terminal connected to a second terminal of the fourth high voltage transistor; and
a third low voltage transistor comprising a first terminal connected to a second terminal of the fifth high voltage transistor, a second terminal connected to ground, and a gate terminal thereof is connected to a gate terminal of the second low voltage transistor.
17 . A memory device comprising:
a buffer die; and
a plurality of core dies vertically stacked on the buffer die and connected to the buffer die via a plurality of through silicon vias (TSV),
wherein the buffer die comprises:
a first driving circuit configured to generate first output data from first input data and output the generated first output data to a first TSV of the plurality of TSVs; and
a first low dropout (LDO) regulator configured to provide a first output voltage of a first output node to the first driving circuit as a first supply voltage,
wherein the first LDO regulator comprises:
a first low voltage transistor comprising a first terminal connected to the first output node and a second terminal connected to a first node;
a first operational amplifier configured to (i) compare a first reference voltage with the first output voltage to obtain a first comparison result, and (ii) output the first comparison result to a gate terminal of the first low voltage transistor; and
a first operation biasing control circuit connected to the first output node and the first node and including at least one first high voltage transistor,
wherein the first operation biasing control circuit is configured to control a bias on the first low voltage transistor based on a pre-defined first voltage.
18 . The memory device of claim 17 , wherein the buffer die further comprises:
a second driving circuit configured to generate second output data from second input data and output the generated second output data to a second TSV of the plurality of TSVs; and
a second LDO regulator configured to provide a second output voltage of a second output node to the second driving circuit as a second supply voltage,
wherein the second LDO regulator comprises:
a second low voltage transistor comprising a first terminal connected to the second output node and a second terminal connected to a second node;
a second operational amplifier configured to compare a second reference voltage with the second output voltage to obtain a second comparison result, and output the second comparison result to a gate terminal of the second low voltage transistor; and
a second operation biasing control circuit connected to the second output node and the second node and including at least one second high voltage transistor,
wherein the second operation biasing control circuit is configured to control a bias on the second low voltage transistor based on a pre-defined second voltage.
19 . The memory device of claim 18 , wherein:
the pre-defined first voltage results in the first output voltage being compatible with the first driving circuit, and
the pre-defined second voltage results in the second output voltage being compatible with the second driving circuit.
20 . The memory device of claim 17 , wherein the at least one first high voltage transistor comprises:
a first high voltage transistor comprising a first terminal connected to a high power voltage terminal and a second terminal connected to the first output node;
a second high voltage transistor comprising a first terminal connected to a gate terminal of the first high voltage transistor and a second terminal connected to the first node; and
a third high voltage transistor comprising a first terminal connected to the high power voltage terminal, a second terminal connected to the second terminal of the second high voltage transistor, and a gate terminal connected to the gate terminal of the first high voltage transistor,
wherein the second high voltage transistor has a different channel type than the first low voltage transistor, the first high voltage transistor, and the third high voltage transistor.