Path-based layer stack connectivity check for plasma induced damage avoidance
This application discloses a computing system implementing a reliability verification tool to identify a portion of a layout design describing an integrated circuit includes a victim transistor having a gate connected to an aggressor transistor. The reliability verification tool can extract a resistance network for connections between the victim transistor and the aggressor transistor, and simulate the resistive network to determine connectivity between the wells of the victim transistor and the aggressor transistor occurs prior to the victim transistor having a gate connected to an aggressor transistor.
1 . A method comprising:
identifying, by a computing system, a portion of a layout design describing an integrated circuit includes a victim transistor having a gate connected to an aggressor transistor, wherein the victim transistor and the aggressor transistor have wells;
extracting, by the computing system, a resistance network for connections between the victim transistor and the aggressor transistor;
simulating, by the computing system, the resistive network to determine connectivity between the wells of the victim transistor and the aggressor transistor, and determine connectivity between the gate of the victim transistor and the aggressor transistor; and
applying, by the computing system, one or more connectivity rules to the determined connectivity between the wells of the victim transistor and the aggressor transistor and the determined connectivity between the gate of the victim transistor and the aggressor transistor to ascertain that the manufacture of the portion of the layout design avoids plasma induced damage when, during manufacture of the integrated circuit, the connectivity between the wells of the victim transistor and the aggressor transistor is formed prior to the victim transistor having the gate connected to the aggressor transistor.
2 . The method of claim 1 , wherein simulating the resistive network further comprises:
setting resistor values of a connection between the gate of the victim transistor and the aggressor transistor to block current to flow through the connection;
injecting current at a source region of the aggressor transistor in the resistive network; and
detecting a reception of the injected current at a source region of the victim transistor in the resistive network, which confirms the connectivity between the wells of the victim transistor and the aggressor transistor.
3 . The method of claim 2 , further comprising:
setting resistor values of the connection between the gate of the victim transistor and the aggressor transistor to unblock current to flow through the connection;
injecting, at a drain region of the aggressor transistor in the resistive network, current towards the gate of the victim transistor; and
detecting a reception of the injected current at the gate of the victim transistor in the resistive network, which confirms the connection between the aggressor transistor and the gate of the victim transistor.
4 . The method of claim 1 , wherein extracting the resistance network for connections between the victim transistor and the aggressor transistor includes an extraction of shared intervening circuitry coupled to the wells of the victim transistor and the aggressor transistor.
5 . The method of claim 4 , wherein the shared intervening circuitry includes at least one of a current pump circuit coupled between source regions of the aggressor transistor and the victim transistor or a different well in the substrate coupled as a soft connection between source regions of the aggressor transistor and the victim transistor.
6 . The method of claim 1 , further comprising:
detecting, by the computing system through a design rule check process, the layout design includes a connectivity error corresponding to one or more design rules; and
waiving, by the computing system, the connectivity error based on the determination of the connectivity between the wells of the victim transistor and the aggressor transistor occurs prior to the victim transistor having the gate connected to the aggressor transistor.
7 . A system comprising:
a memory system configured to store computer-executable instructions; and
a computing system, in response to execution of the computer-executable instructions, is configured to:
identify a portion of a layout design describing an integrated circuit includes a victim transistor having a gate connected to an aggressor transistor, wherein the victim transistor and the aggressor transistor have wells;
extract a resistance network for connections between the victim transistor and the aggressor transistor; and
simulate the resistive network to determine connectivity between the wells of the victim transistor and the aggressor transistor, and determine connectivity between the gate of the victim transistor and the aggressor transistor; and
apply one or more connectivity rules to the determined connectivity between the wells of the victim transistor and the aggressor transistor and the determined connectivity between the gate of the victim transistor and the aggressor transistor to ascertain that the manufacture of the portion of the layout design avoids plasma induced damage when, during manufacture of the integrated circuit, the connectivity between the wells of the victim transistor and the aggressor transistor is formed prior to the victim transistor having the gate connected to the aggressor transistor.
8 . The system of claim 7 , wherein simulating the resistive network further comprises:
setting resistor values of a connection between the gate of the victim transistor and the aggressor transistor to block current to flow through the connection;
injecting current at a source region of the aggressor transistor in the resistive network; and
detecting a reception of the injected current at a source region of the victim transistor in the resistive network, which confirms the connectivity between the wells of the victim transistor and the aggressor transistor.
9 . The system of claim 8 , wherein simulating the resistive network further comprises:
setting resistor values of the connection between the gate of the victim transistor and the aggressor transistor to unblock current to flow through the connection;
injecting, at a drain region of the aggressor transistor in the resistive network, current towards the gate of the victim transistor; and
detecting a reception of the injected current at the gate of the victim transistor in the resistive network, which confirms the connection between the aggressor transistor and the gate of the victim transistor.
10 . The system of claim 7 , wherein extracting the resistance network for connections between the victim transistor and the aggressor transistor includes an extraction of shared intervening circuitry coupled to the wells of the victim transistor and the aggressor transistor.
11 . The system of claim 10 , wherein the shared intervening circuitry includes at least one of a current pump circuit coupled between source regions of the aggressor transistor and the victim transistor or a different well in the substrate coupled as a soft connection between source regions of the aggressor transistor and the victim transistor.
12 . The system of claim 7 , where the computing system, in response to execution of the computer-executable instructions, is further configured to:
detect, through a design rule check process, the layout design includes a connectivity error corresponding to one or more design rules; and
waive the connectivity error based on the determination of the connectivity between the wells of the victim transistor and the aggressor transistor occurs prior to the victim transistor having the gate connected to the aggressor transistor.
13 . An apparatus comprising at least one computer-readable memory device storing instructions configured to cause one or more processing devices to perform operations comprising:
identifying a portion of a layout design describing an integrated circuit includes a victim transistor having a gate connected to an aggressor transistor, wherein the victim transistor and the aggressor transistor have wells;
extracting a resistance network for connections between the victim transistor and the aggressor transistor; and
simulating the resistive network to determine connectivity between the wells of the victim transistor and the aggressor transistor, and determine connectivity between the gate of the victim transistor and the aggressor transistor; and
applying one or more connectivity rules to the determined connectivity between the wells of the victim transistor and the aggressor transistor and the determined connectivity between the gate of the victim transistor and the aggressor transistor to ascertain that the manufacture of the portion of the layout design avoids plasma induced damage when, during manufacture of the integrated circuit, the connectivity between the wells of the victim transistor and the aggressor transistor is formed prior to the victim transistor having the gate connected to the aggressor transistor.
14 . The apparatus of claim 13 , wherein simulating the resistive network further comprises:
setting resistor values of a connection between the gate of the victim transistor and the aggressor transistor to block current to flow through the connection;
injecting current at a source region of the aggressor transistor in the resistive network; and
detecting a reception of the injected current at a source region of the victim transistor in the resistive network, which confirms the connectivity between the wells of the victim transistor and the aggressor transistor.
15 . The apparatus of claim 14 , wherein simulating the resistive network further comprises:
setting resistor values of the connection between the gate of the victim transistor and the aggressor transistor to unblock current to flow through the connection;
injecting, at a drain region of the aggressor transistor in the resistive network, current towards the gate of the victim transistor; and
detecting a reception of the injected current at the gate of the victim transistor in the resistive network, which confirms the connection between the aggressor transistor and the gate of the victim transistor.
16 . The apparatus of claim 13 , wherein extracting the resistance network for connections between the victim transistor and the aggressor transistor includes an extraction of shared intervening circuitry coupled to the wells of the victim transistor and the aggressor transistor.
17 . The apparatus of claim 16 , wherein the shared intervening circuitry includes at least one of a current pump circuit coupled between source regions of the aggressor transistor and the victim transistor or a different well in the substrate coupled as a soft connection between source regions of the aggressor transistor and the victim transistor.
18 . The apparatus of claim 13 , wherein the instructions are further configured to cause the one or more processing devices to perform operations comprising:
detecting, through a design rule check process, the layout design includes a connectivity error corresponding to one or more design rules; and
waiving the connectivity error based on the determination of the connectivity between the wells of the victim transistor and the aggressor transistor occurs prior to the victim transistor having the gate connected to the aggressor transistor.