POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD OF MANUFACTURING SUBSTRATE USING SAME

1 . A polishing composition for a semiconductor process, comprising:

polishing particles;

iron (Fe) ions; and

an iron (Fe) ion stabilizer;

wherein the iron ion stabilizer comprises two or more carboxyl groups, and

wherein the polishing composition has electrical conductivity of 200 μS/cm to 800 μS/cm.

2 . The polishing composition of claim 1 , wherein the iron ions are divalent or trivalent.

3 . The polishing composition of claim 1 , wherein the iron ions are derived from a compound selected from the group consisting of iron chloride, iron nitrate, iron sulfate, iron perchlorate, iron acetate, iron citrate, and Fe(III)-EDTA (ethylenediaminetetraacetic acid).

4 . The polishing composition of claim 1 , wherein the iron ion stabilizer is selected from the group consisting of ethanedioic acid, propanedioic acid, butanedioic acid, pentanedioic acid, hexanedioic acid, and heptanedioic acid.

5 . The polishing composition of claim 1 , wherein a weight ratio of a content of the iron ion stabilizer relative to a content of the iron ions is 3 to 50.

6 . The polishing composition of claim 1 , wherein the polishing composition comprises 1*10 −4 wt % to 5*10 −3 wt % of the iron ions.

7 . The polishing composition of claim 1 , wherein the polishing particles comprise metal oxide particles, silicon oxide particles, or a combination thereof.

8 . The polishing composition of claim 1 , wherein the polishing particles comprise 70 wt % or more of colloidal silica based on a total weight of the polishing particles.

9 . The polishing composition of claim 1 , wherein the polishing composition comprises 1 wt % to 10 wt % of polishing particles based on a total weight of the polishing composition.

10 . The polishing composition of claim 1 , wherein the polishing particles comprise: a first polishing particle filtered through a primary filter having a pore size of 0.05 μm to 2 μm; a second polishing particle filtered through a secondary filter having a pore size of at most 0.9 times of the pore size of the primary filter; and a third polishing particle filtered through a teriary filter having a pore size of at most 1.5 times of the pore size of the secondary filter.

11 . The polishing composition of claim 1 , further comprising a polyglycerin-based compound.

12 . The polishing composition of claim 11 , wherein a weight average molecular weight of the polyglycerin-based compound is 300 g/mol to 1,200 g/mol.

13 . The polishing composition of claim 11 , wherein the polishing composition comprises 0.001 wt % to 0.1 wt % of the polyglycerin-based compound based on a total weight of the polishing composition.

14 . The polishing composition of claim 1 , wherein a polishing selectivity of the polishing composition for a silicon oxide film relative to a tungsten film is 1 to 5.

15 . The polishing composition of claim 1 , wherein a pH of the polishing composition is 1.5 to 4.5.

16 . The polishing composition of claim 1 , wherein a number of the particles having a diameter exceeding 1 μm in the polishing composition is 80/ml or less as measured by a large particle counter (LPC) per unit volume.

17 . The polishing composition of claim 1 , further comprising an additive selected from the group consisting of an oxidant, an acid component, a pH adjuster, a dispersant, a polishing rate enhancer, a polishing regulator, a polishing pad protector, and a preservative.

18 . A method of manufacturing a substrate, comprising polishing the substrate using the polishing composition of claim 1 as a slurry.

19 . The method of claim 18 , wherein the polishing comprises:

contacting the substrate with a polishing pad and the polishing composition supplied from a spray nozzle; and

rotating a polishing head fixing the substrate and a platen, to which the polishing pad is attached.

20 . The method of claim 18 , wherein, during the polishing, a pressure of 6.89 kPa to 48.26 kPa is applied to the substrate.