Aligned metallization for solar cells
Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.
1 . A solar cell, comprising:
a semiconductor layer over a semiconductor substrate;
a first plurality of discrete openings in the semiconductor layer exposing corresponding discrete portions of the semiconductor substrate, wherein all adjacent openings of the first plurality of discrete openings have an overlap;
a plurality of doped regions in the semiconductor substrate corresponding to the first plurality of discrete openings;
an insulating layer over the semiconductor layer and in the first plurality of discrete openings;
a second plurality of discrete openings in the insulating layer exposing corresponding portions of the plurality of doped regions, each one of the second plurality of discrete openings entirely within a perimeter of a corresponding one of the first plurality of discrete openings and is entirely outside of a perimeter of both of the adjacent openings of the first plurality of discrete openings that overlap with the corresponding one of the first plurality of discrete openings, wherein a pattern of the second plurality of discrete openings is interrupted by a location without an opening; and
a plurality of conductive contacts in the second plurality of discrete openings and on the plurality of doped regions.
2 . The solar cell of claim 1 , wherein each of the first plurality of discrete openings is approximately circular, and each of the second plurality of discrete openings is approximately circular.
3 . The solar cell of claim 1 , wherein one or more of the second plurality of discrete openings is centered within a perimeter of a corresponding one or more of the first plurality of discrete openings.
4 . The solar cell of claim 1 , wherein one or more of the second plurality of discrete openings is off-center within a perimeter of a corresponding one or more of the first plurality of discrete openings.
5 . The solar cell of claim 1 , further comprising:
a third plurality of discrete openings in the insulating layer exposing corresponding discrete portions of the semiconductor layer; and
a second plurality of conductive contacts in the third plurality of discrete openings and on the corresponding discrete portions of the semiconductor layer.
6 . The solar cell of claim 5 , wherein the plurality of conductive contacts is a first unidirectional row of conductive contacts, and the second plurality of conductive contacts is a second unidirectional row of conductive contacts parallel with the first unidirectional row of conductive contacts.
7 . The solar cell of claim 1 , wherein the semiconductor layer is on a thin dielectric layer on the substrate, and the first plurality of discrete openings is further in the thin dielectric layer.
8 . The solar cell of claim 1 , wherein the insulating layer is a doping source layer, the solar cell further comprising:
a second insulating layer between the semiconductor layer and the doping source layer, wherein the first plurality of discrete openings is further in the second insulating layer.
9 . The solar cell of claim 8 , further comprising:
an anti-reflective coating layer over the doping source layer, wherein the second plurality of discrete openings is further in the anti-reflective coating layer.
10 . The solar cell of claim 1 , wherein the semiconductor layer has a first conductivity type, and the plurality of doped regions has a second conductivity type opposite the first conductivity type.
11 . A method of fabricating a solar cell, the method comprising:
forming a first plurality of discrete openings in a semiconductor layer above a semiconductor substrate, the first plurality of discrete openings exposing corresponding discrete portions of the semiconductor substrate, wherein all adjacent openings of the first plurality of discrete openings have an overlap;
forming an insulating layer in the first plurality of discrete openings; and
forming a second plurality of discrete openings in the insulating layer using a laser ablation process, each one of the second plurality of discrete openings entirely within a perimeter of a corresponding one of the first plurality of discrete openings and entirely outside of a perimeter of both of the adjacent openings of the first plurality of discrete openings that overlap with the corresponding one of the first plurality of discrete openings, wherein a pattern of the second plurality of discrete openings is interrupted by a location without an opening.
12 . The method of claim 11 , wherein forming the first plurality of discrete openings comprises using a laser ablation process.
13 . The method of claim 11 , wherein forming the first plurality of discrete openings comprises using a screen print etch process.
14 . The method of claim 11 , wherein forming the second plurality of discrete openings comprises forming one or more of the second plurality of discrete openings centered within a perimeter of a corresponding one or more of the first plurality of discrete openings.
15 . A method of fabricating a solar cell, the method comprising:
forming a semiconductor layer over a semiconductor substrate;
forming an insulating layer over the semiconductor layer;
forming a first plurality of discrete openings in the insulating layer and in the semiconductor layer, the first plurality of discrete openings exposing corresponding discrete portions of the semiconductor substrate, wherein all adjacent openings of the first plurality of discrete openings have an overlap;
forming a doping source layer over the insulating layer and in the first plurality of discrete openings;
forming a plurality of doped regions in the semiconductor substrate corresponding to the first plurality of discrete openings, the plurality of doped regions formed from the doping source layer;
forming a second plurality of discrete openings in the doping source layer using a laser ablation process, each one of the second plurality of discrete openings entirely within a perimeter of a corresponding one of the first plurality of discrete openings and entirely outside of a perimeter of both of the adjacent openings of the first plurality of discrete openings that overlap with the corresponding one of the first plurality of discrete openings, wherein a pattern of the second plurality of discrete openings is interrupted by a location without an opening; and
forming a plurality of conductive contacts in the second plurality of discrete openings and on the plurality of doped regions.
16 . The method of claim 15 , wherein forming the first plurality of discrete openings comprises using a laser ablation process.
17 . The method of claim 15 , wherein forming the first plurality of discrete openings comprises using a screen print etch process.
18 . The method of claim 15 , further comprising:
forming a third plurality of discrete openings in the doping source layer and the insulating layer exposing corresponding discrete portions of the semiconductor layer; and
forming a second plurality of conductive contacts in the third plurality of discrete openings and on the corresponding discrete portions of the semiconductor layer.
19 . The method of claim 15 , wherein forming the second plurality of discrete openings comprises forming one or more of the second plurality of discrete openings centered within a perimeter of a corresponding one or more of the first plurality of discrete openings.
20 . The method of claim 15 , wherein forming the second plurality of discrete openings comprises forming one or more of the second plurality of discrete openings off-center within a perimeter of a corresponding one or more of the first plurality of discrete openings.