IP Library › Granted Patent US 12,529,919
Granted Patent B2
US 12,529,919 · App. 18/964,243 · Granted Jan 20, 2026

Apparatus to manipulate guided modes on a nanoscale using electro-optic effects

Inventors: Amr Helmy (Thornhill, CA); Brian Cline (Austin, TX)
Assignees: Amr Helmy; Brian Cline
G02F1/035G02F1/0121G02F1/025G02F2202/20G02F2203/10G02F2203/15G02F2203/50
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Quick Facts
Patent No.
US 12,529,919
App. No.
18/964,243
Granted
Jan 20, 2026
Kind
B2
Abstract

An optical apparatus and device for integrated opto-electronic platforms to manipulate and control guided modes using electro-optic effects in an electromagnetic waveguide. The electromagnetic waveguide comprises a first semiconductor layer, an electro-optical material layer, a metal layer adjacent to the electro-optical material layer, and a second semiconductor layer. The optical apparatus is configured to transfer light in the electro-optical material layer, the electromagnetic waveguide is configured to create coupled plasmonic modes in the electro-optical material layer, and the electro-optical material layer is configured to modulate the light based on a voltage applied across a thickness of the electro-optical material layer.

Claims (38)

1 . An optical apparatus, comprising:

an electromagnetic waveguide, comprising:

a first set of layers, comprising:

a first semiconductor layer; and

an electro-optical material layer;

a second set of layers, comprising:

a metal layer adjacent to the electro-optical material layer; and

a second semiconductor layer on a side of the metal layer opposite from the electro-optical material layer,

wherein the first semiconductor layer is on a side of the electro-optical material layer opposite from the metal layer,

wherein the electromagnetic waveguide is configured to create coupled plasmonic modes in the electro-optical material layer, wherein the electro-optical material layer exhibits an electro-optical effect through second-order nonlinearity, and

wherein the electro-optical material layer is configured to modulate light in the coupled plasmonic modes based on a voltage applied across a thickness of the electro-optical material layer.

2 . The optical apparatus of claim 1 , wherein the first semiconductor layer is adjacent to the electro-optical material layer, and wherein the second semiconductor layer is adjacent to the metal layer.

3 . The optical apparatus of claim 1 , wherein the electro-optical material layer is configured to modulate a phase of the coupled plasmonic modes based on the voltage, wherein the phase is shifted by a first phase shift value in response to the voltage being a first voltage value, and wherein the phase is shifted by a second phase shift value in response to the voltage being a second voltage value.

4 . The optical apparatus of claim 1 , wherein the thickness of the electro-optical material layer is less than a thickness of each of the first semiconductor layer and the second semiconductor layer, and wherein a ratio of a thickness of the metal layer to a wavelength of the light in the coupled plasmonic modes is less than 0.1.

5 . The optical apparatus of claim 4 , wherein the thickness of the metal layer is less than the thickness of each of the first semiconductor layer and the second semiconductor layer.

6 . The optical apparatus of claim 5 , wherein the respective thicknesses of the electro-optical material layer and the metal layer are less than a width of the electromagnetic waveguide.

7 . The optical apparatus of claim 5 , wherein the respective thicknesses of the electro-optical material layer and the metal layer are on an order of tens of nanometers.

8 . The optical apparatus of claim 1 , wherein the electro-optical material layer comprises a crystalline lattice configured to produce the electro-optical effect, and wherein the electro-optical effect comprises changing a refractive index of the electro-optical material layer in response to the voltage applied across the thickness of the electro-optical material layer.

9 . The optical apparatus of claim 1 , wherein the metal layer is coupled to a contact configured to apply the voltage across the thickness of the electro-optical material layer.

10 . The optical apparatus of claim 9 , wherein the electromagnetic waveguide further comprises a second metal layer in contact with the first semiconductor layer, wherein the second metal layer is coupled to a second contact configured to apply the voltage across the thickness of the electro-optical material layer.

11 . The optical apparatus of claim 1 , wherein a refractive index of the first semiconductor layer is greater than a refractive index of the electro-optical material layer.

12 . The optical apparatus of claim 1 , wherein the second set of layers comprises a third semiconductor layer on the second semiconductor layer, wherein a refractive index of the second semiconductor layer is less than a refractive index of the third semiconductor layer.

13 . The optical apparatus of claim 1 , wherein the second set of layers comprises a second electro-optical material layer in contact with the metal layer, wherein first electro-optical material layer and the second electro-optical material layer are in contact with the metal layer on respective sides and surfaces of the metal layer.

14 . The optical apparatus of claim 1 , wherein the electro-optical material layer comprises lithium niobate (LiNbO 3 ), and wherein at least one of the first semiconductor layer and the second semiconductor layer comprises silicon (Si) or doped silicon oxide (SiO 2 ).

15 . The optical apparatus of claim 1 , further comprising a resonant element optically coupled to the electro-optical material layer, and wherein the resonant element is either a) a ring resonator that is adjacent to the electro-optical material layer, or b) an optical cavity, the electro-optical material layer being disposed within the optical cavity.

16 . A transceiver device, comprising:

an electro-optical coupled hybrid plasmonic waveguide (CHPW), comprising:

an electro-optical material layer;

a first semiconductor layer adjacent to a first surface of the electro-optical material layer;

a metal layer adjacent to a second surface of the electro-optical material layer; and

a second semiconductor layer adjacent to an opposite side of the metal layer than the electro-optical material layer, wherein the electro-optical material layer exhibits an electro-optical effect through second-order nonlinearity,

wherein the electro-optical CHPW is configured to transfer light,

wherein the electro-optical CHPW is configured to create coupled plasmonic modes in the electro-optical material layer, and

wherein the electro-optical material layer is configured to modulate light in the coupled plasmonic modes based on a voltage applied across a thickness of the electro-optical material layer.

17 . The transceiver device of claim 16 , further comprising one or more light sources optically coupled to the electro-optical CHPW, wherein the electro-optical CHPW is optically coupled to one or more optical paths of the light sources and the electro-optical CHPW is a transmitter modulator.

18 . The transceiver device of claim 16 , further comprising a control circuit coupled to the electro-optical CHPW, wherein the control circuit is configured to control a voltage applied across a thickness of the electro-optical material layer.

19 . The transceiver device of claim 16 , further comprising one or more photodetectors, wherein the electro-optical CHPW is optically coupled to one or more optical paths of the one or more photodetectors.

20 . The transceiver device of claim 19 , further comprising one or more waveguides or optical fibers coupled to the electro-optical CHPW and respectively to the one or more photodetectors.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 8, 2026
From: CLINE, BRIAN; HELMY, AMR
To: LUMONIQ, INC.
Reel/Frame 074882/0061 →
Continuity (2)
Provisional Application 63603881 · Nov 29, 2023
Related Publication 20250172833A1 · May 29, 2025
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