IP Library › Granted Patent US 12,461,399
Granted Patent B2
US 12,461,399 · App. 17/796,357 · Granted Nov 4, 2025

Method for manufacturing an electro-optical device and electro-optical device

Inventors: Daniel Schall (Aachen, DE); Galip Reha Hepgüler (Aachen, DE)
Assignee: Black Semiconductor GmbH
G02F1/035G02F1/025G02F1/2257H01L21/31055
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Quick Facts
Patent No.
US 12,461,399
App. No.
17/796,357
Granted
Nov 4, 2025
Kind
B2
Abstract

The present application relates to a method for manufacturing an electro-optical device, wherein a waveguide ( 3 ) is provided (S 1 ), a planarization coat ( 7 ) overlapping at least a section of the waveguide ( 3 ) is fabricated (S 2 ), the planarization coat ( 7 ) is provided with a spin-on-glass coating ( 9 ) (S 3 ), at least in the region of the spin-on-glass coating ( 9 ), a preferably dry chemical etching treatment is carried out (S 4 ), optionally, the steps of providing the planarization coat ( 7 ) with a spin-on-glass coating ( 9 ) and the etching treatment are repeated at least once (S 5 , S 6 ), and an active element ( 10 ) is provided (S 7 ) on or above the planarization coat ( 7 ) and above the waveguide ( 3 ).

Claims (25)

1 . A method for manufacturing an electro-optical device, comprising the steps of:

providing a waveguide ( 3 ) (step S 1 );

fabricating a planarization coat ( 7 ) overlapping at least a section of the waveguide ( 3 ) by applying a coating material (step S 2 );

providing the planarization coat ( 7 ) with a spin-on-glass coating ( 9 ) (step S 3 );

carrying out a dry chemical etching treatment (step S 4 ) at least in the region of the spin-on-glass coating ( 9 ), in the course of which etching is carried out down to the planarization coat ( 7 ) and the spin-on-glass coating ( 9 ) and part of the planarization coat ( 7 ) are removed, the steps of providing the planarization coat ( 7 ) with the spin-on-glass coating ( 9 ) and the etching treatment are repeated at least once (steps S 5 , S 6 ), and wherein the step of fabricating of the planarization coat, the step of providing the spin-on glass coating, and subsequent etching treatment are carried out in such a way that the a coat thickness of the planarization coat ( 7 ) above the waveguide ( 3 ) or at least a section thereof is less than or equal to 50 nm, and

providing (step S 7 ) an active element ( 10 ) on or above the planarization coat ( 7 ) and above the waveguide ( 3 ), wherein the active element ( 10 ) comprises at least one material, which absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption and/or whose refractive index changes as a function of a voltage and/or a presence of charges and/or an electric field.

2 . The method according to claim 1 , wherein the electro-optical device is an electro-optical modulator ( 6 ) obtained performing the following steps:

fabricating a dielectric coat on the active element ( 10 ), the dielectric coat comprising at least one oxide and/or nitride, and

providing a further active element ( 10 ) is provided on an upper side of the dielectric coat facing away from the active element ( 10 ), the further active element ( 10 ) being arranged offset with respect to the first active element ( 10 ) in such a way that the first active element ( 10 ) and the further active element ( 10 ) lie one above the other in sections.

3 . The method according to claim 2 , wherein the active element ( 10 ) is provided on or above the upper side of the planarization coat ( 7 ) by applying the at least one material, or wherein the active element ( 10 ) is provided on the upper side of the planarization coat ( 7 ) by a transfer process.

4 . The method according to claim 2 , wherein a film is provided as the active element ( 10 ), and/or wherein as the at least one material of the active element ( 10 ), which absorbs electromagnetic radiation of at least one wavelength and generates an electrical photosignal as a result of the absorption and/or whose refractive index changes as a function of a voltage and/or the presence of charge and/or the electric field, graphene and/or at least one dichalcogenide, and/or germanium and/or lithium niobate and/or at least one electro-optical polymer and/or silicon and/or at least one compound semiconductor is used.

5 . The method according to claim 2 , wherein the planarization coat ( 7 ) is fabricated by applying the coating material at least one or above a section of the waveguide ( 3 ) and on regions lateral to the waveguide ( 3 ).

6 . The method according to claim 1 , wherein the active element ( 10 ) is provided on or above the upper side of the planarization coat ( 7 ) by applying the at least one material, or wherein the active element ( 10 ) is provided on the upper side of the planarization coat ( 7 ) by means of a transfer process.

7 . The method according to claim 6 , wherein the planarization coat ( 7 ) is fabricated by applying the coating material at least one or above a section of the waveguide ( 3 ) and on regions lateral to the waveguide ( 3 ).

8 . The method according to claim 1 , wherein a film is provided as the active element ( 10 ), and/or wherein as the at least one material of the active element ( 10 ), which absorbs electromagnetic radiation of at least one wavelength and generates an electrical photosignal as a result of the absorption and/or whose refractive index changes as a function of a voltage and/or the presence of charge and/or the electric field, graphene and/or at least one dichalcogenide, and/or germanium and/or lithium niobate and/or at least one electro-optical polymer and/or silicon and/or at least one compound semiconductor is used.

9 . The method according to claim 8 , wherein the planarization coat ( 7 ) is fabricated by applying the coating material at least one or above a section of the waveguide ( 3 ) and on regions lateral to the waveguide ( 3 ).

10 . The method according to claim 1 , wherein the planarization coat ( 7 ) is fabricated by applying the coating material at least one or above a section of the waveguide ( 3 ) and on regions lateral to the waveguide ( 3 ).

11 . The method according to claim 1 , wherein the planarization coat ( 7 ) is fabricated by depositing the coating material by at least one of chemical vapor deposition, plasma-assisted chemical vapor deposition, and physical vapor deposition.

12 . The method according to claim 1 , wherein the planarization coat ( 7 ) comprises at least one oxide, and/or at least one nitride and/or at least one polymer.

13 . The method according to claim 1 , wherein the etching treatment is carried out in such a way that the etching rate for the coating material of the planarization coat ( 7 ) is greater or smaller than the etching rate for the spin-on-glass by a maximum of 50%.

14 . The method according to claim 1 , wherein the electro-optical device ( 6 ) is fabricated on or above a wafer ( 4 ) or on or above a chip, and wherein the wafer ( 4 ) or the chip comprises integrated circuits with integrated electronic components ( 13 ).

15 . An electro-optical device ( 6 ) obtained by the method according to claim 1 .

16 . A semiconductor apparatus comprising a chip and at least one electro-optical device ( 6 ) according to claim 15 .

17 . A semiconductor device comprising a wafer ( 4 ) and at least one electro-optical device ( 6 ) according to claim 15 .

18 . The method according to claim 1 , wherein the electro-optical device is one of a photodetector ( 6 ) and an electro-optical modulator ( 6 ).

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2023
From: GESELLSCHAFT FÜR ANGEWANDTE MIKRO- UND OPTOELEKTRONIK MIT BESCHRÄNKTER HAFTUNG - AMO GMBH
To: BLACK SEMICONDUCTOR GMBH
Reel/Frame 065088/0478 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2022
From: SCHALL, DANIEL; REHA HEPGÜLER, GALIP
To: GESELLSCHAFT FÜR ANGEWANDTE MIKRO- UND OPTOELEKTRONIK MIT BESCHRÄNKTER HAFTUNG - AMO GMBH
Reel/Frame 060669/0366 →
Priority Claims (1)
DE 102020102533.5 · Jan 31, 2020 · national
Continuity (1)
Related Publication 20230117534A1 · Apr 20, 2023
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