CVD boron uniformity overcoming loading effects
The loading effects of boron layers on silicon within a window may be reduced or eliminated by depositing an adhesion layer on a dielectric layer before depositing the boron layer. The adhesion layer may reduce or eliminate lateral diffusion of boron species into the window by being deposited on the adhesion layer. The approach using the adhesion layer may enable forming the boron layer at the nanometer scale within windows which are at the tens of millimeters scale and below. The boron layer and the silicon layer may form a detector which may be used in scanning electron microscopes and the like.
1 . A detector comprising:
a silicon layer, wherein the silicon layer is monocrystalline silicon and an n-type semiconductor;
an epitaxial layer, wherein the epitaxial layer is deposited on the silicon layer;
a dielectric layer, wherein the dielectric layer is deposited on the epitaxial layer;
an adhesion layer, wherein the adhesion layer is deposited on the dielectric layer, wherein the dielectric layer and the adhesion layer define a window to the epitaxial layer; and
boron layers including an upper boron layer and a lower boron layer, wherein the upper boron layer is deposited on the adhesion layer, wherein the lower boron layer is deposited on the epitaxial layer within the window, wherein the boron layers are p-type semiconductors, wherein the upper boron layer is separated from the lower boron layer by the dielectric layer, wherein the lower boron layer includes a boron concentration of at least 80 percent, wherein the lower boron layer is a pinhole-free film, wherein at least one of an electron or a photon is configured to penetrate the lower boron layer, wherein the lower boron layer, the epitaxial layer, and the silicon layer form a p-n diode by which the detector is configured to detect at least one of the electron or the photon.
2 . The detector of claim 1 , wherein the dielectric layer is a silicon-based dielectric.
3 . The detector of claim 2 , wherein the dielectric layer is one of silicon oxide or silicon nitride.
4 . The detector of claim 1 , wherein the adhesion layer is a silicon-based Group IV material.
5 . The detector of claim 4 , wherein the adhesion layer is polycrystalline silicon.
6 . The detector of claim 1 , wherein a thickness of the adhesion layer is on an order of hundreds of nanometers or micrometers.
7 . The detector of claim 6 , wherein the thickness of the adhesion layer is on the order of hundreds of nanometers.
8 . The detector of claim 1 , wherein a width of the window is on an order of hundreds of micrometers, millimeters, tens of millimeters, or hundreds of millimeters.
9 . The detector of claim 8 , wherein the width of the window is on the order of hundreds of micrometers, millimeters, or tens of millimeters.
10 . The detector of claim 9 , wherein the width of the window is on the order of hundreds of micrometers or millimeters.
11 . The detector of claim 1 , wherein the boron concentration is at least 95 percent.
12 . The detector of claim 11 , wherein the boron concentration is at least 99 percent.
13 . The detector of claim 1 , wherein thicknesses of the upper boron layer and the lower boron layer are on an order of nanometers or tens of nanometers.
14 . The detector of claim 13 , wherein the thicknesses of the upper boron layer and the lower boron layer are between 2 nm and 20 nm.
15 . The detector of claim 14 , wherein the thicknesses of the upper boron layer and the lower boron layer are between 2 nm and 10 nm.
16 . The detector of claim 1 , further comprising an anode and a cathode, wherein the anode is coupled to the lower boron layer, wherein the cathode is coupled to the silicon layer.
17 . The detector of claim 1 , further comprising a capping layer, wherein the capping layer is deposited on the lower boron layer.
18 . The detector of claim 17 , wherein the capping layer is an anti-reflective coating.
19 . The detector of claim 1 , wherein the detector is annular, wherein the detector defines an aperture through the silicon layer, the dielectric layer, the adhesion layer, the upper boron layer, and the epitaxial layer.
20 . The detector of claim 19 , wherein the detector is segmented into a plurality of channels configured to independently detect at least one of the electron or the photon.
21 . The detector of claim 1 , wherein the detector is one of a plurality of detectors of a detector array, wherein the silicon layer and the epitaxial layer are monolithic across the detector array.
22 . The detector of claim 1 , wherein the epitaxial layer is an n-type semiconductor which is lightly doped, wherein the silicon layer is heavily doped, wherein the p-n diode is a (p+)(n−)(n+) diode.
23 . The detector of claim 1 , wherein the adhesion layer and the upper boron layer are conductive and act as an electron shield for the dielectric layer.
24 . A method comprising:
depositing an epitaxial layer on a silicon layer, wherein the silicon layer is monocrystalline silicon and an n-type semiconductor;
depositing a dielectric layer on the epitaxial layer;
depositing an adhesion layer on the dielectric layer;
etching a window through the adhesion layer and the dielectric layer to the epitaxial layer; and
depositing boron layers, the boron layers including an upper boron layer and a lower boron layer, wherein the upper boron layer is deposited on the adhesion layer, wherein the lower boron layer is deposited on the epitaxial layer within the window, wherein the boron layers are p-type semiconductors, wherein the upper boron layer is separated from the lower boron layer by the dielectric layer, wherein the lower boron layer includes a boron concentration of at least 80 percent, wherein the lower boron layer is a pinhole-free film, wherein at least one of an electron or a photon is configured to penetrate the lower boron layer, wherein the lower boron layer, the epitaxial layer, and the silicon layer form a p-n diode.
25 . The method of claim 24 , wherein the boron layers are deposited using a diborane species, wherein the diborane species does not laterally diffuse along the adhesion layer into the window.
26 . The method of claim 24 , further comprising removing the upper boron layer and the adhesion layer.
27 . A scanning electron microscope comprising:
a detector comprising:
a silicon layer, wherein the silicon layer is monocrystalline silicon and an n-type semiconductor;
an epitaxial layer, wherein the epitaxial layer is deposited on the silicon layer;
a dielectric layer, wherein the dielectric layer is deposited on the epitaxial layer;
an adhesion layer, wherein the adhesion layer is deposited on the dielectric layer, wherein the dielectric layer and the adhesion layer define a window to the epitaxial layer; and
boron layers including an upper boron layer and a lower boron layer, wherein the upper boron layer is deposited on the adhesion layer, wherein the lower boron layer is deposited on the epitaxial layer within the window, wherein the boron layers are p-type semiconductors, wherein the upper boron layer is separated from the lower boron layer by the dielectric layer, wherein the lower boron layer includes a boron concentration of at least 80 percent, wherein the lower boron layer is a pinhole-free film, wherein at least one of an electron or a photon is configured to penetrate the lower boron layer, wherein the lower boron layer, the epitaxial layer, and the silicon layer form a p-n diode by which the detector is configured to detect at least one of the electron or the photon.
28 . The scanning electron microscope of claim 27 , wherein the detector is annular, wherein the detector defines an aperture through the silicon layer, the dielectric layer, the adhesion layer, and the upper boron layer; and wherein the scanning electron microscope is configured to generate an electron beam and pass the electron beam through the aperture.
29 . A detector array comprising:
an array of detectors, wherein the array of detectors comprise:
a silicon layer, wherein the silicon layer is monocrystalline silicon and an n-type semiconductor;
an epitaxial layer, wherein the epitaxial layer is deposited on the silicon layer;
a dielectric layer, wherein the dielectric layer is deposited on the epitaxial layer;
an adhesion layer, wherein the adhesion layer is deposited on the dielectric layer, wherein the dielectric layer and the adhesion layer define a window to the epitaxial layer; and
boron layers including an upper boron layer and a lower boron layer, wherein the upper boron layer is deposited on the adhesion layer, wherein the lower boron layer is deposited on the silicon layer within the window, wherein the boron layers are p-type semiconductors, wherein the upper boron layer is separated from the lower boron layer by the dielectric layer, wherein the lower boron layer includes a boron concentration of at least 80 percent, wherein the lower boron layer is a pinhole-free film, wherein at least one of an electron or a photon is configured to penetrate the lower boron layer, wherein the lower boron layer, the epitaxial layer, and the silicon layer form a p-n diode by which the detectors are configured to detect at least one of the electron or the photon.