Semiconductor detector and method of fabricating same
The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.
1. A detector comprising:
a semiconductor structure having a p-n junction; and
a top electrode for the p-n junction, the top electrode providing an active area for detecting electrons or electromagnetic radiation, the top electrode including a doped layer and a buried portion at least partially beneath the doped layer, the buried portion being configured to reduce a series resistance of the top electrode, wherein the buried portion comprises a plurality of buried sections arranged in a grid configuration or a radial configuration.
2. The detector of claim 1 , wherein:
the detector is configured for in-lens or on-axis operation in a scanning electron microscope (SEM) inspection system, and
the semiconductor structure has a hole through which a scanning beam is passed to a target.
3. The detector of claim 1 , wherein the buried portion is configured to reduce the series resistance of the top electrode without changing the active area provided for detection.
4. The detector of claim 1 , wherein:
the semiconductor structure is a silicon-based semiconductor structure, the top electrode is an anode electrode, and the doped layer is doped with a p-type dopant.
5. The detector of claim 4 , wherein the buried portion of the top electrode is formed by a thermal treatment of a dopant of the same type as the doped layer.
6. The detector of claim 5 , wherein the dopant used to form the buried portion of the top electrode is deposited onto the semiconductor structure by a chemical vapor deposition process.
7. The detector of claim 4 , wherein the p-type dopant of the doped layer includes boron.
8. The detector of claim 1 , wherein:
the semiconductor structure is a silicon-based semiconductor structure, the top electrode is a cathode electrode, and the doped layer is doped with a n-type dopant.
9. The detector of claim 8 , wherein the buried portion of the top electrode is formed by a thermal treatment of a dopant of the same type as the doped layer.
10. The detector of claim 9 , wherein the dopant used to form the buried portion of the top electrode is deposited onto the semiconductor structure by a chemical vapor deposition process.
11. The detector of claim 9 , wherein the dopants of the same type for the buried portion of the top electrode and the doped layer are different n-type dopants.
12. The detector of claim 8 , wherein the n-type dopant of the doped layer includes one or more of arsenic, phosphorus, or antimony.
13. The detector of claim 1 , further comprising a top electrode metal contact disposed over a perimeter of the semiconductor structure and partially overlapping the doped layer of the top electrode, wherein the buried portion of the top electrode reduces the series resistance of the top electrode to facilitate current generated by the p-n junction from the detecting of the electrons or the electromagnetic radiation to be available at the top electrode metal contact.
14. The detector of claim 1 , further comprising a capping layer disposed over the doped layer.
15. The detector of claim 14 , wherein the capping layer is a conductive layer.