IP Library › Granted Patent US 12,389,550
Granted Patent B1
US 12,389,550 · App. 19/054,117 · Granted Aug 12, 2025

Inline monitoring system for process defects during manufacturing

Inventors: Markondeyaraj Pulugurtha (Miami, FL); Satheesh Bojja Venkatakrishnan (Miami, FL); John Volakis (Miami, FL); Peeyush Awasthi (Miami, FL); Anthony Giordano (Miami, FL)
Assignee: The Florida International University Board of Trustees
H05K3/225H01Q15/02H05K2203/107H05K2203/163
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Quick Facts
Patent No.
US 12,389,550
App. No.
19/054,117
Granted
Aug 12, 2025
Kind
B1
Abstract

Systems and methods are provided for inline process monitoring (e.g., remote inline process monitoring) for scalable and precision high-yield manufacturing. Antenna probes, such as millimeter (mm) wave (mmWave) antenna (mWA) probes, can be introduced into fabrication equipment to reveal the nature of hidden conductor and/or dielectric defects, as well as via-pad and/or device pad-trace misalignments, going beyond automated optical inspection (AOI) or contact probing.

Claims (67)

1. A system for inline monitoring of a manufacturing process, the system comprising:

a first antenna sensor disposed on a first side of a substrate of an electronic device being manufactured during the manufacturing process, the first antenna sensor being configured to operate as at least one of a transmitter and a receiver;

a processor; and

a machine-readable medium in operable communication with the processor,

the first antenna being configured to generate a dataset of S-parameter data from the substrate and to transmit the dataset to the machine-readable medium,

the machine-readable medium having instructions stored thereon that, when executed by the processor, perform the following steps:

receive the dataset from the first antenna;

analyze the dataset to identify a defect in the substrate by comparing the dataset to reference data; and

provide process corrections to a user of the system to address the identified defect in the substrate.

2. The system according to claim 1 , the first antenna sensor being a millimeter (mm) wave (mmWave) antenna (mWA).

3. The system according to claim 1 , further comprising a second antenna sensor disposed on a second side of the substrate opposite the first side of the substrate,

the first antenna sensor being configured to operate as a transmitter,

the second antenna sensor being configured to operate as a receiver, and

the first antenna being configured to generate the dataset of S-parameter data together with the second antenna.

4. The system according to claim 3 , the first antenna sensor being an mWA, and

the second antenna sensor being an mWA.

5. The system according to claim 1 , further comprising at least one defect monitoring structure formed on the substrate.

6. The system according to claim 5 , the at least one defect monitoring structure comprising a ring resonator with multiple resonance-using grooves.

7. The system according to claim 3 , the first antenna sensor and the second antenna sensor each having a dual patch topology, a patch topology, a horn topology, a spiral topology, or a Yagi topology.

8. The system according to claim 3 , the first antenna sensor comprising a first antenna array, and the second antenna sensor comprising a second antenna array.

9. The system according to claim 1 , the substrate comprising at least one via structure and at least one pad structure.

10. The system according to claim 3 , the first antenna sensor being coupled with a first lens configured to reduce a first aperture and narrow a first bandwidth, and

the second antenna sensor being coupled with a second lens configured to reduce a second aperture and narrow a second bandwidth.

11. The system according to claim 10 , the first lens being a Fresnel lens or a curved lens, and

the second lens being a Fresnel lens or a curved lens.

12. The system according to claim 1 , the analyzing of the dataset to identify a defect in the substrate comprising using a machine learning model to analyze the dataset, and

the machine learning model being trained using the reference data.

13. The system according to claim 1 , the defect comprising at least one of a line discontinuity, a line width change, a die pad shift, a radio frequency (RF) circuit pattern shift, an interconnect pad shift, and a via-pad shift of at least 5 microns.

14. The system according to claim 1 , the first antenna having first grooves configured for multiple resonances, and

the second antenna having second grooves configured for multiple resonances.

15. A method for inline monitoring of a manufacturing process, the method comprising:

providing the system according to claim 1 ;

using the first antenna sensor and the second antenna sensor to generate the dataset of S-parameter data from the substrate;

transmitting the dataset from the first antenna sensor and the second antenna sensor to the machine-readable medium;

analyzing the dataset to identify the defect in the substrate by comparing the dataset to reference data; and

providing process corrections to the user of the system to address the identified defect in the substrate.

16. The method according to claim 15 , further comprising implementing the process corrections to address the identified defect in the substrate.

17. The method according to claim 16 , the process corrections comprising at least one of: adding printed metal or dielectric material; and trimming metal or a dielectric pattern with a laser.

18. A system for inline monitoring of a manufacturing process, the system comprising:

a first antenna sensor disposed on a first side of a substrate of an electronic device being manufactured during the manufacturing process, the first antenna sensor being configured to operate as a transmitter;

a second antenna sensor disposed on a second side of the substrate opposite the first side of the substrate, the second antenna sensor being configured to operate as a receiver;

at least one defect monitoring structure formed on the substrate;

a processor; and

a machine-readable medium in operable communication with the processor,

the first antenna and the second antenna being configured to generate a dataset of S-parameter data from the substrate and to transmit the dataset to the machine-readable medium,

the machine-readable medium having instructions stored thereon that, when executed by the processor, perform the following steps:

receive the dataset from the first antenna and the second antenna;

analyze the dataset to identify a defect in the substrate by comparing the dataset to reference data; and

provide process corrections to a user of the system to address the identified defect in the substrate,

the first antenna sensor being a millimeter (mm) wave (mmWave) antenna (mWA),

the second antenna sensor being an mWA,

the at least one defect monitoring structure comprising a ring resonator with multiple resonance-using grooves,

the first antenna sensor and the second antenna sensor each having a dual patch topology, a patch topology, a horn topology, a spiral topology, or a Yagi topology,

the substrate comprising at least one via structure and at least one pad structure,

the analyzing of the dataset to identify a defect in the substrate comprising using a machine learning model to analyze the dataset,

the machine learning model being trained using the reference data,

the defect comprising at least one of a line discontinuity, a line width change, and a via-pad shift of at least 5 microns,

the first antenna having first grooves configured for multiple resonances, and

the second antenna having second grooves configured for multiple resonances.

19. A method for inline monitoring of a manufacturing process, the method comprising:

providing the system according to claim 18 ;

using the first antenna sensor and the second antenna sensor to generate the dataset of S-parameter data from the substrate;

transmitting the dataset from the first antenna sensor and the second antenna sensor to the machine-readable medium;

analyzing the dataset to identify the defect in the substrate by comparing the dataset to reference data;

providing process corrections to the user of the system to address the identified defect in the substrate; and

implementing the process corrections to address the identified defect in the substrate.

20. The method according to claim 19 , the process corrections comprising at least one of: adding printed metal or dielectric material; and trimming metal or a dielectric pattern with a laser.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2025
From: PULUGURTHA, MARKONDEYARAJ; VENKATAKRISHNAN, SATHEESH BOJJA; VOLAKIS, JOHN; AWASTHI, PEEYUSH; GIORDANO, ANTHONY
To: THE FLORIDA INTERNATIONAL UNIVERSITY BOARD OF TRUSTEES
Reel/Frame 071665/0469 →
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