POLISHING PAD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
A polishing pad and a method for manufacturing the same of the present disclosure maintain polishing performance required for a polishing process such as a polishing speed or a polishing profile, minimize defects that may occur on a wafer during a polishing process, and exhibit a property of color change when performing a polishing process using a slurry including an oxidizing agent. In addition, when using a polishing pad in a CMP process, a condition for selecting a polishing pad capable of distinguishing the use of polishing pad in a polishing process may be provided by identifying the degree of color change in the polishing pad under an acidic condition without a direct polishing test.
1 . A polishing pad comprising a polishing layer,
wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 90 hours at 70° C., and the polishing layer treated with 3% by weight of the aqueous H 2 O 2 solution has a peak appearing at 1620 cm −1 to 1650 cm −1 when measuring an FT-IR (Fourier Transform Infrared Spectroscopy) spectrum.
2 . The polishing pad of claim 1 , wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 90 hours at 70° C., and the polishing layer treated with 3% by weight of the aqueous H 2 O 2 solution has a peak appearing at 1636 cm −1 when measuring an FT-IR (Fourier Transform Infrared Spectroscopy) spectrum.
3 . The polishing pad of claim 2 , wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 90 hours at 70° C., and the polishing layer treated with 3% by weight of the aqueous H 2 O 2 solution has a peak area of 0.10 to 0.20 at 1636 cm −1 when measuring an FT-IR (Fourier Transform Infrared Spectroscopy) spectrum.
4 . The polishing pad of claim 1 , wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 30 hours to 90 hours at 70° C., and the polishing layer treated with 3% by weight of the aqueous H 2 O 2 solution has a yellow index of 10 to 50.
5 . The polishing pad of claim 1 , wherein the polishing layer treated with 3% by weight of H 2 O 2 has a yellow index (YI) of 10 to 35 after 30 hours in a state of pH 6.
6 . The polishing pad of claim 1 , wherein the polishing layer treated with 3% by weight of H 2 O 2 has a yellow index (YI) of 20 to 50 after 60 hours in a state of pH 6.
7 . The polishing pad of claim 1 , wherein the polishing layer treated with 3% by weight of H 2 O 2 has a yellow index (YI) of 20 to 50 after 90 hours in a state of pH 6.
8 . The polishing pad of claim 1 , wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 90 hours at 70° C., and, after introducing a silica slurry of −35 mV to −45 mV, surface zeta potential that is a sum of zeta potential (Intercept) of the polishing layer and zeta potential (Tracer) of the silica slurry is from −50 mV to −80 mV.
9 . The polishing pad of claim 1 , wherein the polishing layer has an elongation of 60% to 140%.
10 . The polishing pad of claim 1 , wherein the polishing layer has tensile strength of 15 N/m 2 to 20 N/m 2 .
11 . The polishing pad of claim 1 , wherein the polishing layer has surface hardness of 55 shore D to 65 shore D.
12 . The polishing pad of claim 1 , wherein the polishing layer has a plurality of pores formed therein, and the pores have a diameter of 10 μm to 30 μm.
13 . A method for manufacturing a semiconductor device, the method comprising:
providing a polishing pad including a polishing layer; and
polishing a semiconductor substrate while conducting relative rotation so that a surface to be polished of the semiconductor substrate is in contact with a polishing surface of the polishing layer,
wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 90 hours at 70° C., and the polishing layer treated with 3% by weight of the aqueous H 2 O 2 solution has a peak appearing at 1620 cm −1 to 1650 cm −1 when measuring an FT-IR (Fourier Transform Infrared Spectroscopy) spectrum.
14 . The method of claim 13 , wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 90 hours at 70° C., and the polishing layer treated with 3% by weight of the aqueous H 2 O 2 solution has a peak appearing at 1636 cm −1 when measuring an FT-IR (Fourier Transform Infrared Spectroscopy) spectrum.
15 . The method of claim 13 , wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 30 hours to 90 hours at 70° C., and the polishing layer treated with 3% by weight of the aqueous H 2 O 2 solution has a yellow index of 10 to 50.
16 . The method of claim 13 , wherein the polishing layer is treated with 3% by weight of an aqueous H 2 O 2 solution for 90 hours at 70° C., and, after introducing a silica slurry of −35 mV to −45 mV, surface zeta potential that is a sum of zeta potential (Intercept) of the polishing layer and zeta potential (Tracer) of the silica slurry is from −50 mV to −80 mV.
17 . The method of claim 13 , wherein the polishing layer has an elongation of 60% to 140%.
18 . The method of claim 13 , wherein the polishing layer has tensile strength of 15 N/m 2 to 20 N/m 2 .
19 . The method of claim 13 , wherein the polishing layer has a plurality of pores formed therein, and the pores have a diameter of 10 μm to 30 μm.
20 . A polishing pad comprising a polishing layer,
wherein the polishing layer has a surface zeta potential variance (Δ|Surface Zeta|Δ|Surface Zeta|) according to the following Equation 1 of 0.1 to 10:
Δ
❘
"\[LeftBracketingBar]"
Surface
Zeta
❘
"\[RightBracketingBar]"
=
(
-
Intercept
i
+
Tracer
)
(
-
Intercept
a
+
Tracer
)
[
Equation
1
]
herein,
Intercept i is zeta potential of the polishing layer untreated with 3% by weight of an aqueous H 2 O 2 solution;
Intercept a is zeta potential of the polishing layer after being treated with 3% by weight of an aqueous H 2 O 2 solution; and
Tracer is zeta potential of a silica slurry.