THERMALLY CONDUCTIVE CHEMICAL MECHANICAL POLISHING (CMP) PAD
Thermally conductive chemical mechanical polishing (CMP) pads are disclosed. In one aspect, a polishing pad for a CMP system includes at least one first material having properties for polishing a wafer and at least one second material configured to increase a heat transfer coefficient (HTC) of the polishing pad.
1 . A polishing pad for a chemical mechanical polishing (CMP) system, comprising:
at least one first material having properties for polishing a wafer; and
at least one second material configured to increase a heat transfer coefficient (HTC) of the polishing pad.
2 . The polishing pad of claim 1 , wherein the at least one first material comprises a monomer and the at least one second material comprises a conductive material.
3 . The polishing pad of claim 1 , wherein the at least one second material is configured to lower a temperature of the polishing pad by about 10-30° C. during polishing of a wafer compared to a comparative polishing pad formed of only the at least one first material.
4 . The polishing pad of claim 1 , wherein:
the at least one first material comprises a polymer, an acrylate, an oligomer, a monomer, polyurethane, and/or nylon, and
the at least one second material comprises graphite, graphene, molybdenum, and/or vapor grown carbon nano fibers (CNF).
5 . The polishing pad of claim 1 , wherein:
the at least one first material comprises polyurethane, and
the at least one second material comprises vapor grown carbon nano fibers (CNF).
6 . The polishing pad of claim 5 , wherein the vapor grown CNF is in the range of about wt. %-20 wt. % of the polishing pad.
7 . The polishing pad of claim 1 , wherein the thermal conductivity of the polishing pad is at least about 2 W/mK.
8 . A chemical mechanical polishing (CMP) system, comprising:
a substrate carrier head configured to retain a wafer;
a polishing pad configured to polish the wafer; and
a platen supporting the polishing pad,
wherein the polishing pad comprises at least one first material having properties for polishing a wafer, and at least one second material configured to increase a heat transfer coefficient (HTC) of the polishing pad.
9 . The CMP system of claim 8 , further comprising:
a platen cooling system configured to cool the polishing pad.
10 . The CMP system of claim 9 , wherein a difference in temperature between first and second sides of the polishing pad during polishing of the wafer is in the range of about 30 to about 40° C.
11 . The CMP system of claim 8 , wherein the CMP system is configured to employ increased downforce, higher platen speeds, and/or more abrasive slurry chemistries compared to a comparative CMP system using a comparative polishing pad formed of only the at least one first material.
12 . The CMP system of claim 8 , wherein:
the at least one first material comprises polyurethane, and
the at least one second material comprises vapor grown carbon nano fibers (CNF).
13 . The CMP system of claim 12 , wherein the vapor grown CNF is in the range of about 10 wt. %-20 wt. % of the polishing pad.
14 . The CMP system of claim 8 , wherein the thermal conductivity of the polishing pad is at least about 2 W/mK.
15 . A method of manufacturing a polishing pad for a chemical mechanical polishing (CMP) system, comprising:
combining at least one first material with at least one second material, the at least one first material having properties for polishing a wafer, the at least one second material is configured to increase a heat transfer coefficient (HTC) of the at least one first material; and
forming a polishing pad using the combination of the at least one first material and the at least one second material.
16 . The method of claim 15 , wherein forming the polishing pad comprises:
applying a predetermined pressure and a predetermined amount of heat to the combination of the at least one first material and the at least one second material.
17 . The method of claim 15 , wherein:
the at least one first material comprises polyurethane, and
the at least one second material comprises vapor grown carbon nano fibers (CNF).
18 . The method of claim 17 , wherein the vapor grown CNF is in the range of about 10 wt. %-20 wt. % of the polishing pad.
19 . The method of claim 15 , wherein the thermal conductivity of the polishing pad is at least about 2 W/mK.
20 . The method of claim 15 , wherein the at least one second material is configured to lower a temperature of the polishing pad by about 10-30° C. during polishing of a wafer compared to a comparative polishing pad formed of only the at least one first material.