APPARATUS AND METHOD FOR FABRICATING MULTI-DIE INTERCONNECTION USING LITHOGRAPHY PROCESS
A semiconductor and a method of fabricating the semiconductor having multiple, interconnected die including: providing a semiconductor substrate having a plurality of disparate die formed within the semiconductor substrate, and a plurality of scribe lines formed between pairs of adjacent die of the plurality of disparate die; and fabricating, by a lithography system, a plurality of inter-die connections that extend between adjacent pair of die of the plurality of die.
1 . A semiconductor device comprising:
a substrate;
a plurality of processing elements (PEs) disposed on the substrate in an arrangement such that a subset of the plurality of PEs is disposed at a periphery of the arrangement;
a plurality of inter-PE connections extending between and coupling respective pairs of PEs of the plurality of PEs; and
a plurality of peripheral connections that is distinct from the plurality of inter-PE connections, wherein the plurality of peripheral connections is formed at one or more sides of one or more respective PEs of the subset along the periphery of the arrangement.
2 . The device of claim 1 , wherein each peripheral connection of the plurality of peripheral connections comprises:
a first end connected to respective circuitry of the one or more respective PEs of the subset; and
a second end extending to one or more devices external to the arrangement.
3 . The device of claim 1 , wherein each PE of the plurality of PEs comprises a die.
4 . The device of claim 1 , wherein the substrate comprises a continuous substrate comprising one or more semiconductor materials, and wherein each PE of the plurality of PEs is integrally formed with the continuous substrate.
5 . The device of claim 4 , wherein the continuous substrate comprises a semiconductor wafer, and wherein the plurality of PEs is not diced from a body of the semiconductor wafer.
6 . The device of claim 1 , wherein the plurality of PEs is formed on the substrate using a lithography system.
7 . The device of claim 1 , wherein the plurality of inter-PE connections comprises a same conductive material that forms respective intra-PE connections at respective circuitry of each PE of the plurality of PEs.
8 . The device of claim 1 , wherein each PE of the plurality of PEs comprises a respective protective barrier surrounding the PE, and wherein a respective subset of the plurality of inter-PE connections, associated with each PE, terminates at the PE inside the respective protective barrier.
9 . The device of claim 1 , wherein one or more PEs of the plurality of PEs comprise respective self-correcting logic devices.
10 . The device of claim 1 , wherein the subset of the plurality of PEs is a first subset comprising one or more peripheral PEs, wherein at least one side of respective peripheral PEs of the first subset is formed without inter-PE connections, and wherein the plurality of PEs comprises:
a second subset comprising one or more interior PEs positioned in one or more interior regions of the arrangement, wherein the second subset comprises respective inter-PE connections with adjacent PEs extending from all sides of respective interior PEs of the second subset.
11 . A method comprising:
forming a plurality of processing elements (PEs) on a substrate in an arrangement such that a subset of the plurality of PEs is disposed at a periphery of the arrangement;
forming a plurality of inter-PE connections extending between and coupling respective pairs of PEs of the plurality of PEs; and
forming a plurality of peripheral connections that is distinct from the plurality of inter-PE connections, wherein the plurality of peripheral connections is formed at one or more sides of one or more respective PEs of the subset along the periphery of the arrangement.
12 . The method of claim 11 , wherein each peripheral connection of the plurality of peripheral connections comprises:
a first end connected to respective circuitry of the one or more respective PEs of the subset; and
a second end extending to one or more devices external to the arrangement.
13 . The method of claim 11 , wherein each PE of the plurality of PEs comprises a die.
14 . The method of claim 11 , wherein the substrate comprises a continuous substrate comprising one or more semiconductor materials, and wherein each PE of the plurality of PEs is integrally formed with the continuous substrate.
15 . The method of claim 14 , wherein the continuous substrate comprises a semiconductor wafer, and wherein the plurality of PEs is not diced from a body of the semiconductor wafer.
16 . The method of claim 11 , wherein the plurality of PEs is formed on the substrate using a lithography system.
17 . The method of claim 11 , wherein the plurality of inter-PE connections comprises a same conductive material that forms respective intra-PE connections at respective circuitry of each PE of the plurality of PEs.
18 . The method of claim 11 , wherein forming the plurality of PEs comprises forming a respective protective barrier surrounding each PE of the plurality of PEs, and wherein a respective subset of the plurality of inter-PE connections, associated with each PE, is formed such that the respective subset terminates at the PE inside the respective protective barrier.
19 . The method of claim 11 , wherein one or more PEs of the plurality of PEs comprise respective self-correcting logic devices.
20 . The method of claim 11 , wherein the subset of the plurality of PEs is a first subset comprising one or more peripheral PEs, wherein at least one side of respective peripheral PEs of the first subset is formed without inter-PE connections, and wherein the plurality of PEs comprises:
a second subset comprising one or more interior PEs positioned in one or more interior regions of the arrangement, wherein the second subset comprises respective inter-PE connections with adjacent PEs extending from all sides of respective interior PEs of the second subset.