Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
View Patent ↗This invention improves TFT characteristics by making an interface between an active layer, especially a region forming a channel formation region and an insulating film excellent, and provides a semiconductor device provided with a semiconductor circuit made of a semiconductor element having uniform characteristics and a method of fabricating the same. In order to achieve the object, a gate wiring line is formed on a substrate or an under film, a gate insulating film, an initial semiconductor film, and an insulating film are formed into a laminate without exposing them to the atmosphere, and after the initial semiconductor film is crystallized by irradiation of infrared light or ultraviolet light (laser light) through the insulating film, patterning is carried out to obtain an active layer and a protection film each having a desired shape, and then, a resist mask is used to fabricate the semiconductor device provided with an LDD structure.
1. A method of fabricating an EL display device, said method comprising the steps of:
forming a gate wiring on an insulating surface;
forming a gate insulating film and an amorphous semiconductor film into a laminate sequentially without exposing them to an atmosphere on the gate wiring;
irradiating the amorphous semiconductor film with at least a light selected from the group consisting of an infrared light and an ultraviolet light to crystallize the amorphous semiconductor film into a crystalline semiconductor film in an oxidizing atmosphere and to form an oxide film at a same time;
covering a first portion of the crystalline semiconductor film with a first mask;
providing an impurity element into second portions of the crystalline semiconductor film at a first concentration through the oxide film using the first mask;
providing the impurity element into third portions of the crystalline semiconductor film at a second concentration through the oxide film using a second mask,
wherein the second concentration is higher than the first concentration,
wherein the first portion of the crystalline semiconductor film is a channel forming region while the third portions of the crystalline semiconductor film are source and drain regions,
wherein fourth portions of the crystalline semiconductor film which are not provided with the impurity at the second concentration but only the first concentration are low concentration impurity regions.
2. A method according to claim 1 ,
wherein contaminants on a surface of the gate insulating film are reduced by active hydrogen or hydrogen compound before forming the amorphous semiconductor film.
3. A method according to claim 1 , further comprising a step of forming a silicon nitride film before forming the gate insulating film.
4. A method according to claim 1 , further comprising a step of forming a laminate film including BCB (benzocyclobutene) as a part of the gate insulating film.
5. A method according to claim 1 ,
wherein the gate insulating film, the amorphous semiconductor film and the oxide film are formed in a same chamber.
6. A method according to claim 1 ,
wherein the light is a laser light.
7. A method according to claim 1 ,
wherein the impurity is at least one selected from the group consisting of a trivalent impurity and a pentavalent impurity.
8. A method according to claim 1 wherein said oxidizing atmosphere is an air.
9. A method according to claim 1 wherein said oxidizing atmosphere includes oxygen.
10. A method of fabricating a semiconductor device comprising:
forming a gate wiring over a substrate;
forming a gate insulating film and an amorphous semiconductor film sequentially over the gate wiring in a film formation apparatus;
irradiating the amorphous semiconductor film with a laser light to crystallize the semiconductor film in an oxidizing atmosphere, wherein an oxide film is formed on the semiconductor film as a result of the irradiation of the laser light;
covering a first portion of the crystallized semiconductor film with a first mask;
introducing an impurity element into second portions of the crystallized semiconductor film at a first concentration through the oxide film using the first mask; and
introducing the impurity element into third portions of the crystallized semiconductor film through the oxide film using a second mask at a second concentration larger than the first concentration, wherein said second mask extends beyond side edges of the first portion,
wherein the first portion of the crystallized semiconductor film is a channel forming region while the third portions of the crystailized semiconductor film are source and drain regions, and
wherein fourth portions of the crystallized semiconductor film which are located between the first portion and the third portions are low concentration impurity regions.
11. A method according to claim 10 further comprising a step of forming a silicon nitride film before forming the gate insulating film.
12. A method according to claim 10 , wherein said gate insulating film comprises BCB (benzocyclobutene).
13. A method according to claim 10 , wherein the impurity is at least one selected from the group consisting of a trivalent impurity and a pentavalent impurity.
14. A method according to claim 10 , wherein said amorphous semiconductor film is irradiated with the laser light in an oxidizing atmosphere.
15. A method according to claim 10 wherein said oxidizing atmosphere is an air.
16. A method according to claim 10 wherein said oxidizing atmosphere includes oxygen.
17. A method of fabricating a semiconductor device comprising:
forming a gate wiring over a substrate;
forming a gate insulating film and an amorphous semiconductor film sequentially over the gate wiring in a film formation apparatus;
crystallizing the amorphous semiconductor film by RTA in an oxidizing atmosphere, wherein an oxide film is formed on the semiconductor film as a result of the RTA;
covering a first portion of the crystallized semiconductor film with a first mask;
introducing an impurity element into second portions of the crystallized semiconductor film at a first concentration through the oxide film using the first mask; and
introducing the impurity element into third portions of the crystallized semiconductor film through the oxide film using a second mask at a second concentration larger than the first concentration, wherein said second mask extends beyond side edges of the first portion,
wherein the first portion of the crystallized semiconductor film is a channel forming region while the third portions of the crystallized semiconductor film are source and drain regions, and
wherein fourth portions of the crystallized semiconductor film which are located between the first portion and the third portions are low concentration impurity regions.
18. A method according to claim 17 comprising a step of forming a silicon nitride film before forming the gate insulating film.
19. A method according to claim 17 , wherein said gate insulating film comprises BCB (benzocyclobutene).
20. A method according to claim 17 wherein the impurity is at least one selected from the group consisting of a trivalent impurity and a pentavalent impurity.
21. A method according to claim 17 wherein said RTA is carried out in an oxidizing atmosphere.
22. A method according claim 17 wherein said oxidizing atmosphere is an air.
23. A method according to claim 17 wherein said oxidizing atmosphere includes oxygen.
24. A method of fabricating an EL display device comprising:
forming a gate wiring over a substrate;
forming a first gate insulating film, an amorphous semiconductor film and a second insulating film sequentially over the gate wiring in this order in a film formation apparatus;
irradiating the amorphous semiconductor film with light to crystallize the semiconductor film through the second insulating film;
covering a first portion of the crystallized semiconductor film with a first mask;
introducing an impurity element into second portions of the crystallized semiconductor film at a first concentration using the first mask; and
introducing the impurity element into third portions of the crystallized semiconductor film using a second mask at a second concentration larger than the first concentration, wherein said second mask extends beyond side edges of the first portion,
wherein the first portion of the crystallized semiconductor film is a channel forming region while the third portions of the crystallized semiconductor film are source and drain regions, and
wherein fourth portions of the crystallized semiconductor film which are located between the first portion and the third portions are low concentration impurity regions.
25. A method according to claim 24 , wherein said light is a laser light.
26. A method according to claim 24 , wherein said light is irradiated by RTA.
27. A method according to claim 24 further comprising a step of forming a silicon nitride film before forming the gate insulating film.
28. A method according to claim 24 , wherein said gate insulating film comprises BCB (benzocyclobutene).
29. A method according to claim 24 , wherein the impurity is at least one selected from the group consisting of a trivalent impurity and a pentavalent impurity.
30. A method according to claim 24 , wherein said amorphous semiconductor film is irradiated with the laser light in an oxidizing atmosphere.
31. A method of fabricating a semiconductor device comprising:
forming a gate wiring over a substrate;
forming a first gate insulating film, an amorphous semiconductor film and a second insulating film sequentially over the gate wiring in this order in a film formation apparatus;
irradiating the amorphous semiconductor film with light to crystallize the amorphous semiconductor film through the second insulating film;
covering a first portion of the crystallized semiconductor film with a first mask;
introducing an impurity element into second portions of the crystallized semiconductor film at a first concentration using the first mask; and
introducing the impurity element into third portions of the crystalline semiconductor film using a second mask at a second concentration larger than the first concentration, wherein said second mask extends beyond side edges of the first portion,
wherein the first portion of the crystallized semiconductor film is a channel forming region while the third portions of the crystallized semiconductor film are source and drain regions, and
wherein fourth portions of the crystallized semiconductor film which are located between the first portion and the third portions are low concentration impurity regions.
32. A method according to claim 31 , wherein said light is a laser light.
33. A method according to claim 31 , wherein said light is irradiated by RTA.
34. A method according to claim 31 further comprising a step of forming a silicon nitride film before forming the gate insulating film.
35. A method according to claim 31 , wherein said gate insulating film comprises BCB (benzocyclobutene).
36. A method according to claim 31 , wherein the impurity is at least one selected from the group consisting of a trivalent impurity and a pentavalent impurity.