IP Library Granted Patent US 6,844,556
Granted Patent B2
US 6,844,556 · App. 10/442,283 · Granted Jan 18, 2005

Ion source, method of operating the same, and ion source system

Assignee: Nissin Electronics Co., Ltd.
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Quick Facts
Patent No.
US 6,844,556
App. No.
10/442,283
Granted
Jan 18, 2005
Kind
B2
Abstract

In an ion source, within a support body which supports a plasma production chamber for producing a plasma on the basis of an ion source flange, a cavity is provided ranging from a position near the plasma production chamber to a position near the ion source flange. The cavity serves as a cooling medium passage which introduces a cooling medium to a position near the plasma production chamber to cool the plasma production chamber. The plasma production chamber is cooled at a position very near it by the cooling medium. Therefore, temperature of the plasma production chamber at the time of plasma production is kept at low temperatures.

Claims (11)

1. A method of operating an ion source comprising a plasma production chamber for producing a plasma and a support body which supports the plasma production chamber on the basis of an ion source flange and has a cavity provided ranging from a position near the plasma production chamber to a position near the ion source flange in an interior of the support body, the method comprising:

operating the ion source selectively in a cooling mode in which a cooling medium is flowed into the cavity of the support body, or in a evacuating mode for carrying out a vacuum-evacuation of the cavity of the support body.

2. The method of operating an ion source according to claim 1 , further comprising:

operating the ion source in a purging mode in which a nitrogen gas is supplied into the cavity of the support body, after the cooling mode.

3. An ion source system comprising:

an ion source having a plasma production chamber for producing a plasma, and a support body for supporting the plasma production chamber on the basis of an ion source flange, the support body having a cavity provided ranging from a position near the plasma production chamber to a position near the ion source flange in an interior of the support body;

a cooling medium supplying device for flowing a cooling medium into the cavity of the support body of said ion source;

a vacuum evacuating device for carrying out a vacuum-evacuation of the cavity of the support body of said ion source; and

a selector for selectively and communicatively connecting the cavity of the support body of said ion source to the cooling medium supplying device or the vacuum evacuating device.

4. The ion source system according to claim 3 , further comprising:

a nitrogen gas source for supplying a nitrogen gas into the cavity of the support body of said ion source.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 17, 2006
From: NISSIN ELECTRIC CO., LTD.
To: NISSIN ION EQUIPMENT CO., LTD.
Reel/Frame 017314/0812 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2003
From: KINOYAMA, TOSHIAKI
To: NISSIN ELECTRIC CO., LTD.
Reel/Frame 014104/0144 →
Priority Claims (1)
JP 2002-150659 · May 24, 2002 · national
Continuity (1)
Related Publication 20030218429A1 · Nov 27, 2003