IP Library Granted Patent US 6,847,114
Granted Patent B2
US 6,847,114 · App. 10/291,146 · Granted Jan 25, 2005

Micro-scale interconnect device with internal heat spreader and method for fabricating same

Assignees: Turnstone Systems, Inc.; Wispry, Inc.
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Quick Facts
Patent No.
US 6,847,114
App. No.
10/291,146
Granted
Jan 25, 2005
Kind
B2
Abstract

A micro-scale interconnect device with internal heat spreader and method for fabricating same. The device includes first and second arrays of generally coplanar electrical communication lines. The first array is disposed generally along a first plane, and the second array is disposed generally along a second plane spaced from the first plane. The arrays are electrically isolated from each other. Embedded within the interconnect device is a heat spreader element. The heat spreader element comprises a dielectric material disposed in thermal contact with at least one of the arrays, and a layer of thermally conductive material embedded in the dielectric material. The device is fabricated by forming layers of electrically conductive, dielectric, and thermally conductive materials on a substrate. The layers are arranged to enable heat energy given off by current-carrying communication lines to be transferred away from the communication lines.

Claims (42)

1. A micro-scale interconnect device for transmitting electrical current or discrete signals, comprising:

(a) a first array of generally coplanar electrical communication lines disposed generally along a first plane;

(b) a second array of generally coplanar electrical communication lines disposed generally along a second plane spaced from the first plane and electrically isolated from the first array; and

(c) a heat spreader element comprising a dielectric material disposed in thermal contact with at least one of the arrays, and a layer of thermally conductive material embedded in the dielectric material, wherein the thermally conductive material is electrically isolated from the first and second rays and wherein the dielectric material comprises first and second dielectric layers, the first and second dielectric layers comprise exactly the same material.

2. The device according to claim 1 wherein the first array is separated from the second array by a distance ranging from approximately 3 to approximately 8 microns.

3. The device according to claim 1 wherein adjacent coplanar communication lines of each array are separated from each other by a distance ranging from approximately 25 to approximately 250 microns.

4. The device according to claim 1 wherein each communication line has a width ranging from approximately 10 to approximately 100 microns.

5. The device according to claim 1 wherein each communication line has a thickness ranging from approximately 1 to approximately 5 microns.

6. The device according to claim 1 wherein the first array, the second array, and the heat spreader element are formed on an electrically isolated substrate.

7. The device according to claim 6 wherein the substrate is a semiconductor material and the first dielectric layer is formed on the substrate.

8. The device according to claim 6 wherein the substrate is a bulk dielectric substrate.

9. The device according to claim 1 wherein the heat spreader element is interposed between the first and second arrays of communication lines.

10. The device according to claim 9 wherein the thermally conductive layer is interposed between the first and second dielectric layers.

11. The device according to claim 10 wherein the first dielectric layer is formed on the first array, the thermally conductive layer is formed on the first dielectric layer, the second dielectric layer is formed on the thermally conductive layer, and the second array is formed on the second dielectric layer.

12. The device according to claim 11 comprising a top dielectric layer formed on the second array.

13. The device according to claim 11 wherein the first array is formed on an electrically isolated substrate.

14. The device according to claim 13 wherein the substrate is a bulk dielectric substrate.

15. The device according to claim 13 wherein the substrate is a semiconductor material and the first dielectric layer is formed on the substrate.

16. The device according to claim 1 wherein the thermally conductive material has an out-of-plane thickness ranging from approximately 0.1 to approximately 1 microns.

17. The device according to claim 1 wherein the thermally conductive material comprises a material selected from the group consisting of gold, copper, aluminum, and diamond.

18. A micro-scale interconnect device for transmitting electrical current or discrete signals, comprising:

(a) a first dielectric layer;

(b) a first layer of communication lines formed on the first dielectric layer;

(c) a second dielectric layer formed on the first layer of communication lines and on the first dielectric layer;

(d) a thermally conductive layer formed on the second dielectric layer;

(e) a third dielectric layer formed on the thermally conductive layer, wherein the first, second, and third dielectric layers comprise exactly the same material; and

(f) a second layer of communication lines formed on the third dielectric layer.

19. The device according to claim 18 wherein the first dielectric layer is formed on a substrate.

20. The device according to claim 18 wherein the first dielectric layer is a bulk substrate.

21. The device according to claim 18 wherein the first dielectric layer has a thickness ranging from approximately 0.5 to approximately 1 micron.

22. The device according to claim 18 wherein adjacent coplanar communication lines of each array are separated from each other by a distance ranging from approximately 25 to approximately 250 microns.

23. The device according to claim 18 wherein the thermally conductive material has an out-of-plane thickness ranging from approximately 0.1 to approximately 1 microns.

24. The device according to claim 18 wherein the thermally conductive material comprises a material selected from the group consisting of gold, copper, aluminum, and diamond.

25. The device according to claim 18 wherein at least one of the dielectric layers has a thickness ranging from approximately 1 to approximately 5 microns.

26. A micro-scale system comprising:

(a) a first array of generally coplanar electrical communication lines disposed generally along a first plane;

(b) a second array of generally coplanar electrical communication lines disposed generally along a second plane spaced from the first plane and electrically isolated from the first array;

(c) a heat spreader element comprising a dielectric material disposed in thermal contact with at least one of the arrays, and a layer of thermally conductive material embedded in the dielectric material, wherein the thermally conductive material is electrically isolated from the first and second arrays and wherein the dielectric material comprises first and second dielectric layers, the first and second dielectric layers comprises exactly the same material; and

(d) a micro-scale device electrically communicating with a communication line of at least one of the first and second arrays.

27. The system according to claim 26 wherein adjacent coplanar communication lines of each array are separated from each other by a distance ranging from approximately 25 to approximately 250 microns.

28. The system according to claim 26 wherein the thermally conductive material has an out-of-plane thickness ranging from approximately 0.1 to approximately 1 microns.

29. The system according to claim 26 wherein the thermally conductive material comprises a material selected from the group consisting of gold, copper, aluminum and diamond.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2022
From: WISPRY, INC.
To: AAC TECHNOLOGIES PTE. LTD.
Reel/Frame 059096/0617 →
RELEASE OF SECURITY INTEREST Recorded May 29, 2014
From: VENTURE LENDING & LEASING IV, INC.
To: WISPRY, INC.
Reel/Frame 033062/0059 →
RELEASE OF SECURITY INTEREST Recorded Mar 26, 2014
From: VENTURE LENDING & LEASING IV, INC.
To: WISPRY, INC.
Reel/Frame 032527/0950 →
SECURITY AGREEMENT Recorded Oct 6, 2006
From: WISPRY, INC.
To: VENTURE LENDING & LEASING IV, INC.
Reel/Frame 022482/0236 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2005
From: TURNSTONE SYSTEMS, INC.
To: WISPRY, INC.
Reel/Frame 016844/0514 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2004
From: COVENTOR, INC.
To: TURNSTONE SYSTEMS, INC.; WISPRY, INC.
Reel/Frame 015479/0663 →
Continuity (7)
Provisional Application 6033752700 · Nov 9, 2001
Provisional Application 6033752800 · Nov 9, 2001
Provisional Application 6033752900 · Nov 9, 2001
Provisional Application 6033805500 · Nov 9, 2001
Provisional Application 6033806900 · Nov 9, 2001
Provisional Application 6033807200 · Nov 9, 2001
Related Publication 20030116851A1 · Jun 26, 2003