Semiconductor device and fabrication method thereof
View Patent ↗A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film. To solve these problems, a method of fabricating a semiconductor device according to the present invention comprises the steps of forming a hydrogen-containing first insulating film on a semiconductor layer formed into a predetermined shape, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a second insulating film in contact with the first insulating film, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a hydrogen-containing third insulating film on the second insulating film and conducting heat-treatment in an atmosphere containing hydrogen or nitrogen.
1. A semiconductor device comprising:
a semiconductor layer formed over a substrate;
a first insulating film formed over a semiconductor layer, said first insulating film comprising a silicon nitride oxide film having a hydrogen concentration of at least 1 atomic % to less than 30 atomic % and a nitrogen concentration of at least 10 atomic % to less than 25 atomic %; and
a second insulating film formed on said first insulating film, said second insulating film comprising a silicon nitride oxide film having a hydrogen concentration of at least 1 atomic % to less than 30 atomic % and a nitrogen concentration of at least 10 atomic % to less than 25 atomic %, or a silicon nitride film having a hydrogen concentration of at least 1 atomic % to less than 30 atomic %.
2. A semiconductor device comprising:
a semiconductor layer formed over a substrate;
a first insulating film formed over said semiconductor layer, said first insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen;
a second insulating film comprising a silicon nitride oxide film having a nitrogen concentration of less than 10 atomic %, said second insulating film formed on said first insulating film; and
a third insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen or a silicon nitride film containing at least 1 atomic % to less than 30 atomic % of hydrogen, said third insulating film formed on said second insulating film.
3. A semiconductor device comprising:
a semiconductor layer formed over a substrate;
a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween;
a first insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen, said first insulating film being in contact with said gate electrode and said gate insulating film; and
a second insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen or a silicon nitride film containing at least 1 atomic % to less than 30 atomic % of hydrogen, said second insulating film being in contact with said first insulating film.
4. A semiconductor device comprising:
a semiconductor layer formed over a substrate;
a gate electrode formed adjacent to said semiconductor layer with a gate insulating film interposed therebetween;
a first insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen, said first insulating being in contact with said gate electrode and said gate insulating film;
a second insulating film comprising a silicon nitride oxide film containing a nitrogen concentration of less than 10 atomic %, said second insulating film formed on said first insulating film;
a third insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and containing at least 10 atomic % to less than 25 atomic % of nitrogen or a silicon nitride film containing at least 1 atomic % to less than 30 atomic % of hydrogen, said third insulating film formed on said second insulating film.
5. A semiconductor device according to any of claims 1 through 4 , wherein a carbon concentration in said first insulating film is not greater than 2×10 19 cm −3 .
6. A semiconductor device according to any of claims 1 through 4 , wherein a carbon concentration in said third insulating film is not greater than 2×10 19 cm −3 .
7. A semiconductor device according to claim 2 or 4 , wherein a carbon concentration in said second insulating film is not greater than 2×10 19 cm −3 .
8. A semiconductor device according to any of claims 1 through 7 , wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.
9. A semiconductor device according to any of claims 1 through 8 , wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.