Aluminum nitride sintered compact, ceramic substrate, ceramic heater and electrostatic chuck
The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.
1. A ceramic substrate having a conductor formed inside thereof for a semiconductor producing/examining device,
wherein:
a ceramic layer including said conductor and the vicinity thereof and a ceramic layer located lower than said conductor exhibit a state of intergranular fracture at the time of fracture; and
a ceramic layer other than said ceramic layers exhibits a state of intragranular fracture at the time of fracture.
2. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate comprises nitride ceramic or carbide ceramic.
3. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate has a thickness of 20 mm or less.
4. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate has a disc-like shape and a diameter of 200 mm or more.
5. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate is used at a temperature of 150° C. or higher.
6. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate has an electrostatic electrode or an RF electrode.
7. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said conductor is a metal foil, a metal wire, or a sintered body of metal particles.
8. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein the average grain diameter of a ceramic grain of said ceramic substrate is 3 μm or less.
9. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein the average grain diameter of a ceramic grain of said ceramic substrate is 2 μm or less.
10. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate contains oxygen.
11. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate contains 0.05 to 10 weight % of oxygen.
12. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate contains sulfur.
13. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate contains 0.05 to 200 ppm of sulfur.
14. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate contains an oxide.
15. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
wherein said ceramic substrate contains an oxide of a rare earth element.
16. The ceramic substrate for a semiconductor producing/examining device according to claim 1 ,
which is used as a ceramic heater.
17. An electrostatic chuck having an electrostatic electrode and a resistance heating element formed inside a ceramic substrate thereof, wherein:
a ceramic layer including said electrostatic electrode and the vicinity thereof and a ceramic layer located lower than said electrostatic electrode exhibit a state of intergranular fracture at the time of fracture; and
a ceramic layer other than said ceramic layers exhibits a state of intragranular fracture at the time of fracture.
18. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate comprises nitride ceramic or carbide ceramic.
19. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate has a thickness of 20 mm or less.
20. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate has a disc-like shape and a diameter of 200 mm or more.
21. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate is used at a temperature of 150° C. or higher.
22. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate has an RF electrode.
23. The electrostatic chuck according to claim 17 ,
wherein said heating element is a metal foil, a metal wire, or a sintered body of metal particles.
24. The electrostatic chuck according to claim 17 ,
wherein the average grain diameter of a ceramic grain of said ceramic substrate is 3 μm or less.
25. The electrostatic chuck according to claim 17 ,
wherein the average grain diameter of a ceramic grain of said ceramic substrate is 2 μm or less.
26. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate contains oxygen.
27. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate contains 0.05 to 10 weight % of oxygen.
28. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate contains sulfur.
29. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate contains 0.05 to 200 ppm of sulfur.
30. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate contains an oxide.
31. The electrostatic chuck according to claim 17 ,
wherein said ceramic substrate contains an oxide of a rare earth element.
32. The electrostatic chuck according to claim 17 , which is used as a ceramic heater.