Semiconductor device and method for fabricating the same
A silicon oxide film 102 , a Pt film 103 x , a Ti film 104 x and a PZT film 105 x are deposited in this order over a Si substrate 101 . The Si substrate 101 is placed in a chamber 106 so that the PZT film 105 x is irradiated with an EHF wave 108 . The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
1. A semiconductor device, comprising:
a substrate;
a semiconductor layer provided in part of the substrate;
a gate insulating film provided on the semiconductor layer;
a gate electrode provided on the gate insulating film;
source/drain regions of a first conductivity type defined in the semiconductor layer each to a side of the gate electrode;
a channel region for carriers of the first conductivity type defined in the semiconductor layer between the source/drain regions of the first conductivity type;
a body region of a second conductivity type that is defined in the semiconductor layer under the channel region for carriers of the first conductivity type and has a potential higher than that in the channel region for carriers of the first conductivity type with respect to carriers in a band edge where carriers flow;
a conductor member for electrically connecting the gate electrode and the body region of the second conductivity type, wherein the channel region for carriers of the first conductivity type is in direct contact with the gate insulating film;
a channel region for carriers of the second conductivity type provided between the channel region for carriers of the first conductivity type and the body region of the second conductivity type;
another semiconductor layer provided on the substrate;
another gate insulating film provided on said another semiconductor layer;
another gate electrode provided on said another gate insulating film;
source/drain regions of the second conductivity type defined in said another semiconductor layer each to a side of said another gate electrode;
a channel region for carriers of the first conductivity type defined in said another semiconductor layer between the source/drain regions of the second conductivity type;
a channel region for carriers of the second conductivity type defined in said another semiconductor layer between said another gate insulating film and the channel region for carriers of the first conductivity type;
a body region of the first conductivity type that is defined in said another semiconductor layer under the channel region for carriers of the first conductivity type and has a potential higher than that in the channel region for carriers of the first conductivity type, with respect to carriers in a band edge where carriers flow; and
another conductor member for electrically connecting said another gate electrode and the body region of the first conductivity type, wherein
the semiconductor device functions as a complementary device,
the body region in each of the semiconductor layers is made of Si,
the channel region for carriers of the first conductivity type in the semiconductor layer is made of Si 1-y Cy (y≠0),
the channel region for carriers of the second conductivity type in the semiconductor layer is made of Si 1-x Ge x (x≠0),
the channel region for carriers of the first conductivity type in the semiconductor layer functions as an n-channel where electrons flow,
the channel region for carriers of the first conductivity type in said another semiconductor layer is made of Si 1-x Ge x ,
the channel region for carriers of the second conductivity type in said another semiconductor layer is made of Si 1-y C y , and
the channel region for carriers of the first conductivity type in said another semiconductor layer functions as a p-channel where holes flow.
2. The semiconductor device of claim 1 , wherein the gate insulating film is made of at least one material selected from the group consisting of SiON, Si 3 N 4 , ZrO 2 , HfO 2 , Ta 2 O 5 , PZT(Pb(Zr, Ti)O 3 ), PLZT((Pb, La)(Zr, Ti)O 3 ), SBT (SrBi 2 Ta 2 O 9 ), (SrBi 2 (Nb, Ta) 2 O 9 ), STO(SrTiO 3 ), BTO(BaTiO 3 ), BST((Ba, Sr)TiO 3 )PZT, PLZT, SBT, BST((Ba, Sr)TiO 3 ), and BIT(Bi 4 Ti 3 O 12 ).
3. The semiconductor device of claim 2 , wherein the gate insulating film has been subjected to irradiation with an electromagnetic wave in the frequency range from 1 GHz to 100 GHz, both inclusive.
4. The semiconductor device of claim 1 , wherein the semiconductor substrate is an SOI substrate.
5. The semiconductor device of claim 1 , wherein 0<x≦0.4 and 0<y≦0.03.
6. A semiconductor device, comprising:
a substrate;
a semiconductor layer provided in part of the substrate;
a gate insulating film provided on the semiconductor layer;
a gate electrode provided on the gate insulating film;
source/drain regions of a first conductivity type defined in the semiconductor layer each to a side of the gate electrode;
a channel region for carriers of the first conductivity type defined in the semiconductor layer between the source/drain regions of the first conductivity type;
a body region of a second conductivity type that is defined in the semiconductor layer under the channel region for carriers of the first conductivity type and has a potential higher than that in the channel region for carriers of the first conductivity type with respect to carriers in a band edge where carriers flow;
a conductor member for electrically connecting the gate electrode and the body region of the second conductivity type, wherein the channel region for carriers of the first conductivity type is in direct contact with the gate insulating film;
a channel region for carriers of the second conductivity type provided between the channel region for carriers of the first conductivity type and the body region of the second conductivity type;
another semiconductor layer provided on the substrate;
another gate insulating film provided on said another semiconductor layer;
another gate electrode provided on said another gate insulating film;
source/drain regions of the second conductivity type defined in said another semiconductor layer each to a side of said another gate electrode;
a channel region for carriers of the first conductivity type defined in said another semiconductor layer between the source/drain regions of the second conductivity type;
a channel region for carriers of the second conductivity type defined in said another semiconductor layer between said another gate insulating film and the channel region for carriers of the first conductivity type;
a body region of the first conductivity type that is defined in said another semiconductor layer under the channel region for carriers of the first conductivity type and has a potential higher than that in the channel region for carriers of the first conductivity type, with respect to carriers in a band edge where carriers flow; and
another conductor member for electrically connecting said another gate electrode and the body region of the first conductivity type, wherein
the semiconductor device functions as a complementary device,
the body region in each of the semiconductor layers is made of Si,
the channel region for carriers of the first conductivity type in the semiconductor layer is made of Si 1-x Ge x (x≠0),
the channel region for carriers of the second conductivity type in the semiconductor layer is made of Si 1-y C y (y≠0),
the channel region for carriers of the first conductivity type in the semiconductor layer functions as an n-channel where electrons flow,
the channel region for carriers of the first conductivity type in said another semiconductor layer is made of Si 1-y Cy,
the channel region for carriers of the second conductivity type in said another semiconductor layer is made of Si 1-x Ge x , and
the channel region for carriers of the second conductivity type in the semiconductor layer functions as a p-channel where holes flow.
7. The semiconductor device of claim 6 , wherein 0<x≦0.4 and 0<y≦0.03.
8. The semiconductor device of claim 6 , wherein the gate insulating film is made of at least one material selected from the group consisting of SiON, Si 3 N 4 , ZrO 2 , HfO 2 , Ta 2 O 5 , PZT(Pb(Zr, Ti)O 3 ), PLZT (Pb, La)(Zr, Ti)O 3 ), SBT (SrBi 2 Ta 2 O 9 ), (SrBi 2 (Nb, Ta) 2 O 9 ), STO(SrTiO 3 ), BTO(BaTiO 3 ), BST((Ba, Sr)TiO 3 )PZT, PLZT, SBT, BIT(Bi 4 Ti 3 O 12 ), and BST((Ba, Sr)TiO 3 ).
9. The semiconductor device of claim 8 , wherein the gate insulating film has been subjected to irradiation with an electromagnetic wave in the frequency range from 1 GHz to 100 GHz, both inclusive.
10. The semiconductor device of claim 6 , wherein the semiconductor substrate is an SOI substrate.