Ion implantation systems and methods utilizing a downstream gas source
View Patent ↗Systems and methods that neutralize ion beams in implantation processes are provided. The methods involve introducing a gas into the ion beam. The gas, for example, can be introduced into a region defined by an electrode through which the ion beam travels. The gas increases the generation of electrons in the beam which, in turn, neutralizes the beam. The neutralized beam has a reduced tendency to diverge (i.e., greater beam stability) during transport which can increase the beam current delivered to the wafer and implant uniformity, amongst other advantages. The systems and methods are particularly useful in limiting the divergence of low energy ion beams.
1. An ion implantation system comprising:
an ion beam source capable of generating an ion beam;
a first dopant gas supply connected to the ion beam source for introducing a dopant gas to the ion beam;
an electrode associated with the ion beam source and positioned so that the ion beam passes therethrough; and
a second neutralizin gas supply constructed and arranged to introduce neutralizing as into a region defined, at least in part, by the electrode for neutralizing the space charge of the ion beam.
2. The system of claim 1 , wherein the electrode comprises an extraction electrode.
3. The system of claim 1 , wherein the electrode is grounded.
4. The system of claim 1 , wherein the electrode is shaped to confine the neutralizing gas introduced into the region.
5. The system of claim 4 , wherein the electrode includes an inwardly tapered end.
6. The system of claim 1 , wherein a second electrode is secured to the manipulator assembly.
7. The system of claim 6 , wherein a second electrode is secured to the manipulator assembly.
8. The system of claim 1 , wherein an inlet to the region is formed in the electrode.
9. The system of claim 8 , wherein the inlet is constructed and arranged to introduce gas into the region in an upstream direction.
10. The system of claim 1 , further comprising a flow controlling device constructed and arranged to control the flow of the neutralizing gas from the second neutralizing gas supply.
11. The system of claim 1 , wherein the flow rate of the neutralizing gas from the second neutralizing gas supply is less than about 2.5 cm 3 (STP)/min.
12. The system of claim 1 , wherein the second neutralizing gas supply is constructed and arranged to introduce an inert gas into the region.
13. The system of claim 1 , wherein the second neutralizing gas supply is constructed and arranged to introduce a gas selected from the group consisting of dry nitrogen, xenon and argon.
14. The system of claim 1 , wherein the gas comprises neutral species.
15. An ion implantation system comprising:
an ion beam source capable of generating an ion beam;
a first dopant gas supply connected to the ion beam source for introducing a dopant gas to the ion beam;
a housing downstream of and proximate to the ion beam source and positioned so that the ion beam passes therethrough; and
a second neutralizing gas supply constructed and arranged to introduce neutralizing gas into a region defined, at least in part by the housing.
16. The ion implantation system of claim 15 , wherein the housing comprises an electrode.
17. The ion implantation system of claim 15 , wherein the housing is not connected to a voltage source.
18. The ion implantation system of claim 15 , wherein the housing is upstream of an acceleration /deceleration column for accelerating and decelerating the ion beam to a desired energy.
19. An ion implantation system comprising:
a dopant gas supply;
an ion beam source connected to the dopant gas supply and capable of generating an ion beam from the dopant gas
an extraction electrode associated with the ion beam source and positioned so that the ion beam passes therethrough; and
a secondary gas supply constructed and arranged to introduce gas comprising neutral species into a region defined, at least in part, by the extraction electrode for neutralizing the space charge of the ion beam.
20. A method of generating an ion beam comprising:
generating an ion beam using an ion beam source;
introducing a dopant gas to the ion beam; and
introducing a neutralizing gas into the ion beam within a region defined, at least in part, by an electrode associated with the ion beam source and through which the ion beam passes for neutralizing the space charge of the ion beam.
21. The method of claim 20 , wherein introducing the neutralizing gas into the ion beam neutralizes the ion beam.
22. The method of claim 21 , wherein the ion beam is neutralized to a substantially neutral space charge.
23. The method of claim 20 , wherein the electrode comprises an extraction electrode.
24. The method of claim 20 , wherein the electrode is grounded.
25. The method of claim 20 , further comprising controlling the rate of introduction of the neutralizing gas into the ion beam.
26. The method of claim 25 , wherein rate of introduction of the neutralizing gas into the ion beam is less than about 2.5 cm 3 (STP)/min.
27. The method of claim 20 , further comprising accelerating the ion beam to an energy of less than about 10 keV.
28. The method of claim 27 , further comprising accelerating the ion beam to an energy of less than about 5 keV.
29. The method of claim 20 , wherein the neutralizing gas comprises an inert gas.
30. The method of claim 20 , wherein the neutralizing gas comprises a gas selected from the group consisting of dry nitrogen, xenon and argon.
31. The method of claim 20 , wherein the neutralizing gas comprises neutral species.