Field emission device having a covering comprising aluminum nitride
The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device. In one aspect, a method of depositing an aluminum nitride comprising layer over a semiconductor substrate includes positioning a semiconductor substrate within a chemical vapor deposition reactor. Ammonia and at least one of triethylaluminum and trimethylaluminum are fed to the reactor while the substrate is at a temperature of about 500° C. or less and at a reactor pressure from about 100 mTorr to about 725 Torr effective to deposit a layer comprising aluminum nitride over the substrate at such temperature and reactor pressure. In one aspect, such layer is utilized as a cell dielectric layer in DRAM circuitry. In one aspect, such layer is deposited over emitters of a field emission display. The invention contemplates DRAM and field emission devices utilizing such layer and alternate layers.
1. A field emission device comprising:
an electron emission substrate comprising emitters having at least a partial covering comprising electrically insulative aluminum nitride, the electron emission substrate comprising a conductive extraction grid formed elevationally outward of and spaced from the emitters, the covering being received over the extraction grid; and
an electrode collector substrate spaced from the electron emission substrate.
2. The field emission device of claim 1 wherein the electron collector substrate comprises a face plate comprising phosphor, and the field emission device comprises a field emission display.
3. The field emission device of claim 1 wherein aluminum nitride of the covering is in contact with the extraction grid.
4. The field emission device of claim 1 wherein the emitter covering consists essentially of aluminum nitride.
5. The field emission device of claim 1 wherein the emitter covering is void of oxide.
6. The field emission device of claim 1 wherein the aluminum nitride Is substantially amorphous.
7. The field emission device of claim 1 wherein the covering comprises a thickness less than or equal to about 150 Angstroms.
8. The field emission device of claim 1 wherein the covering comprises a thickness greater than or equal to about 50 Angstroms.
9. The field emission device of claim 1 wherein the emitters have outermost tips, the aluminum nitride being received over the emitter outermost tips.
10. The field emission device of claim 1 wherein the emitters have outermost tips, the aluminum nitride being received over and in contact with the emitter outermost tips.
11. The field emission device of claim 1 wherein the covering is received entirely over the emitters.
12. The field emission device of claim 1 wherein the emitters have outermost tips, the aluminum nitride being received over the emitter outermost tips and being received entirely over the emitters.
13. The field emission device of claim 1 wherein the emitters have outermost tips, the aluminum nitride being received over and in contact with the emitter outermost tips and being received entirely over the emitters.
14. A field emission display device comprising:
an electron emission substrate comprising emitters of a first composition having at least a partial covering comprising electrically insulative aluminum nitride of a different second composition; and
an electrode collector substrate spaced from the electron emission substrate.
15. The field emission display device of claim 14 wherein the electron collector substrate comprises a face plate comprising phosphor.
16. The field emission display device of claim 14 wherein the electron emission substrate comprises a conductive extraction grid formed elevationally outward of and spaced from the emitters, the covering being received over the extraction grid.
17. The field emission display device of claim 14 wherein the electron emission substrate comprises a conductive extraction grid formed elevationally outward of and spaced from the emitters, aluminum nitride of the covering being in contact with the extraction grid.
18. The field emission display device of claim 14 wherein the emitter covering consists essentially of aluminum nitride.
19. The field emission display device of claim 14 wherein the emitter covering is void of oxide.
20. The field emission display device of claim 14 wherein the aluminum nitride is substantially amorphous.
21. The field emission display device of claim 14 wherein the covering comprises a thickness less than or equal to about 150 Angstroms.
22. The field emission display device of claim 14 wherein the covering comprises a thickness greater than or equal to about 50 Angstroms.
23. The field emission display device of claim 14 wherein the emitters have outermost tips, the aluminum nitride being received over the emitter outermost tips.
24. The field emission display device of claim 14 wherein the emitters have outermost tips, the aluminum nitride being received over and in contact with the emitter outermost tips.
25. The field emission display device of claim 14 wherein the covering is received entirely over the emitters.
26. The field emission display device of claim 14 wherein the emitters have outermost tips, the aluminum nitride being received over the emitter outermost tips and being received entirely over the emitters.
27. The field emission display device of claim 14 wherein the emitters have outermost tips, the aluminum nitride being received over and in contact with the emitter outermost tips and being received entirely over the emitters.