Self-aligned lateral heterojunction bipolar transistor
View Patent ↗A method for manufacturing a lateral heterojunction bipolar transistor (HBT) is provided comprising a semiconductor substrate having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.
1. A method of manufacturing a lateral heterojunction bipolar transistor comprising:
providing a semiconductor substrate;
forming a first insulating layer over the semiconductor substrate;
forming a first silicon layer over the first insulating layer;
forming a base trench in the first silicon layer to form a collector layer and an emitter layer;
providing a semiconductive layer on the sidewalls of the base trench to form an emitter structure in contact with the emitter layer and a collector structure in contact with the collector layer;
forming a base structure of a compound semiconductive material in the base trench;
forming an interlevel dielectric layer; and
providing a plurality of connections through the interlevel dielectric layer to the collector layer, emitter layer, and base structure.
2. The hod of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 1 wherein forming a base structure in the base trench forms a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.
3. The method of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 1 wherein:
form the first silicon layer forms a heavily doped semiconductive material of the second conductivity type; and
providing a semiconductive layer on the sidewalls of the base trench provides a lightly doped semiconductive material of the second conductivity type.
4. The method of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 1 wherein:
forming a first insulating layer over the semiconductor substrate further comprises:
forming a window in the first insulating layer to expose a portion of the semiconductor substrate; and
forming a base trench in the first silicon layer to form an emitter layer and a collector layer forms an emitter layer over the first insulating layer and a collector layer over the exposed portion of to semiconductor substrate.
5. The method of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 4 wherein foaming a base structure in the base trench forms a material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.
6. A method of manufacturing a lateral heterojunction bipolar transistor comprising:
providing a semiconductor substrate of a first conductivity type;
forming a first insulating layer over the semiconductor substrate;
forming a first silicon layer of a second conductivity type over the first insulating layer;
forming a base trench in the first silicon layer to form a collector layer and an emitter layer,
forming a silicon spacer of the second conductivity type on the sidewalls of the base trench to form a collector structure and an emitter structure;
forming a base structure of a compound semiconductive material in the base trench;
forming an interlevel dielectric layer, and
providing a plurality of connections through the interlevel dielectric layer to the collector layer, the emitter layer, and the base structure.
7. The method of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 6 wherein forming the base structure in the base trench forms a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.
8. The method of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 6 wherein:
providing the semiconductor substrate provides a lightly doped semiconductive material of a first conductivity type;
forming the first silicon layer deposits a heavily doped semiconductive material of the second conductivity type; and
providing a semiconductive layer on the sidewalls of the base trench provides a lightly doped semiconductive material of the second conductivity type.
9. The method of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 6 further comprising:
forming a window in the first insulating layer to expose a portion of the semiconductor substrate; and
forming a base trench in the first silicon layer to form a collector layer and an emitter layer forms a collector layer over the exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer.
10. The method of manufacturing a lateral heterojunction bipolar transistor as claimed in claim 9 wherein forming a base structure in the base trench forms a material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.