IP Library › Granted Patent US 6,913,950
Granted Patent B2
US 6,913,950 · App. 10/457,637 · Granted Jul 5, 2005

Semiconductor device with chamfered substrate and method of making the same

Assignee: Rohm Co., Ltd.
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Quick Facts
Patent No.
US 6,913,950
App. No.
10/457,637
Granted
Jul 5, 2005
Kind
B2
Abstract

A semiconductor device includes an insulating substrate, a cutout formed in side surfaces of the substrate, a conductive pad formed on the obverse surface of the substrate, an electrode formed on the reverse surface of the substrate, a semiconductor chip mounted on the substrate, and a connector which connects the pad to the electrode. The connector is arranged in the cutout.

Claims (14)

1. A method or making a semiconductor device, the method comprising the steps of:

preparing an insulating substrate having an obverse surface and a reverse surface;

forming an upper conductive pattern and a lower conductive pattern on the obverse surface and the reverse surface, respectively;

forming a connection hole in the substrate for making an electrical connection between the upper conductive pattern and the lower conductive pattern;

mounting a semiconductor chip an the substrate;

forming a resin coating to enclose the semiconductor chip; and

dividing the substrate along cut lines which intersect the connection hole;

wherein the method further comprises a step of providing closure on the obverse surface of the substrate for closing the connection hole, and the closure is divided along the cut lines at the step of dividing the substrate.

2. The method according to claim 1 , wherein the cut lines cross each other at a center of the connection hole.

3. The method according to claim 1 , wherein the closure prevents the resin coating from entering the connection hole.

4. The method according to claim 1 , wherein the resin coating is allowed to enter the connection hole.

5. The method according to claim 1 , further comprising the step of filling the connection hole with a filler prior to the resin coating forming step.

6. The method according to claim 5 , further comprising the step of providing a conductive layer held in contact with the filler.

7. The method according to claim 1 , wherein the closure is made of electroconductive metal, and wherein the divided closure laterally projects from the divided substrate.

Priority Claims (1)
JP 2000-211073 · Jul 12, 2000 · national
Continuity (2)
Division 0990310400 · Jul 11, 2001
Related Publication 20030209788A1 · Nov 13, 2003