Overcoating composition for photoresist and method for forming photoresist pattern using the same
Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into the photoresist pattern. The photoresist in the portion where the acids are diffused is developed with an alkali solution to be removed. As a result, the linewidth of positive photoresist patterns can be reduced, and the linewidth of negative photoresist patterns can be prevented from slimming in a subsequent linewidth measurement process using SEM.
1. A method for forming a photoresist pattern comprising:
(a) coating a chemically amplified photoresist composition on a semiconductor substrate and baking the substrate to form a photoresist film;
(b) exposing the photoresist film to light;
(c) baking the photoresist film;
(d) developing the photoresist film to form a photoresist pattern;
(e) coating an overcoating composition on the entire photoresist pattern to form an overcoating layer;
(f) baking the overcoating layer; and
(g) developing the overcoating layer with an alkaline developing solution; wherein the overcoating composition comprises:
(i) a water-soluble polymer being one of a compound of Formula 1 or polyvinylpyrrolidone:
wherein R′ is H or CH 3 ; R 5 and R 6 individually are H or a C 1 -C 3 alkyl group; and n is an integer from 50 to 150;
(ii) an acidic compound; and
(iii) water.
2. The method according to claim 1 , wherein a height of the photoresist pattern obtained from step (d) ranges from 2000 to 3000 Å.
3. The method according to claim 1 , wherein a thickness of the overcoating layer in step (e) ranges from 200 to 5000 Å from the top surface of the photoresist pattern of the step (d).
4. The method according to claim 1 , wherein the bake process of step (f) is performed at a temperature ranging from 50 to 150° C. for 30 to 90 seconds.
5. The method according to claim 1 , wherein the alkaline developing solution of step (g) is TMAH, KOH or NaOH aqueous solution.
6. The method according to claim 1 , wherein the chemically amplified photoresist composition comprises a photoresist polymer having a repeating unit of Formula 2:
wherein X 1 , X 2 , Y 1 , Y 2 , Z 1 and Z 2 individually are CH 2 or CH 2 CH 2 ;
R 1 , R 3 and R 4 individually are selected from the group consisting of H, substituted C 1 -C 10 alkyl and unsubstituted C 1 -C 10 alkyl;
R 2 is C 1 -C 10 hydroxyalkyl;
R* is an acid labile protecting group;
p, q and r individually are an integer ranging from 0 to 2; and
the relative ratio of a:b:c:d is in the range 5˜90 mol %:5˜90 mol %:0˜90 mol %:0˜90 mol %.
7. The method according to claim 6 , wherein the photoresist polymer is a hybrid-type copolymer further comprising a polymer having a repeating acrylate unit.
8. The method according to claim 7 , wherein the second polymer comprising the acrylate repeating unit is poly{4-[2-(4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropyl]phenyl methacrylate/(1,1,1,3,3,3-hexafluoro-2-tert-butyl carboxylate)isopropyl methacrylate}, poly[N-perfluoropropyl maleimide/t-butyl-5-norbornene-2-carboxylate/2-(perfluoro-octyl)ethyl methacrylate] or poly(maleic anhydride/hexafluorobutyl-5-norbornene-2-carboxylate/2,6-difluoro-methylbenzylacrylate).
9. The method according to claim 1 , wherein the exposure light source of step (b) is selected from the group consisting of ArF (193 nm), KrF (248 nm), F2 (157 nm) and EUV (13 nm).
10. The method according to claim 1 , wherein the exposure energy of step (b) ranges from 10 to 30 mJ/cm 2 .
11. The method according to claim 1 , wherein molecular weights of compound of the Formula 1 ranges from 5000 to 15000.
12. The method according to claim 1 , wherein the water soluble polymer represented by Formula 1 is poly (N,N-dimethylacrylamide).
13. The method according to claim 1 , wherein (ii) the acidic compound is an organic sulfonic acid.
14. The method according to claim 13 , wherein the organic sulfonic acid is a p-toluenesulfonic acid monohydrate.
15. The method according to claim 1 , wherein (ii) the acidic compound is present in an amount ranging from 2 to 20 wt % based on the water-soluble polymer.
16. The method according to claim 1 , wherein (iii) the water is present in an amount ranging from 500 to 4000 wt % based on the water-soluble polymer.